BAP64-03,115 - 175V Silicon PIN Diode SOD-323 | NXP
MPN： BAP64-03,115 ✗ 停產BAP64-03,115 概覽
A PIN diode is a special class of diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. In the RF domain, this intrinsic layer makes the device behave like a current-controlled resistor at RF frequencies while presenting low capacitance when reverse-biased. PIN diodes sit within the broader hierarchy of RF semiconductors: discrete diodes -> RF diodes -> PIN diodes, and are fundamental building blocks of variable attenuators, RF switches, phase shifters, and limiter circuits in wireless and instrumentation systems.
Key features of the BAP64-03 include high reverse voltage of 175 V, low diode capacitance of 0.35 pF, low forward resistance of 0.7 ohm at rated current, and low series inductance thanks to the compact SOD-323 outline. These parameters directly translate into low insertion loss, high isolation, and low distortion in RF signal-path designs, particularly at VHF through microwave frequencies where stray capacitance and package parasitics dominate performance.
Architecturally, the BAP64-03 uses a silicon vertical PIN structure engineered for a wide intrinsic region, which raises the carrier storage time and yields a more linear resistance-versus-current transfer characteristic than a conventional PN junction diode. This makes it well suited for precise, current-controlled attenuation in AGC and gain-control loops.
Typical applications include RF attenuators, antenna-switch modules, VCO tuning circuits, and RF protection/limiting circuits in wireless infrastructure, test equipment, and professional communication radios.
Designers should note the forward-current-to-resistance relationship: RF resistance is controlled by DC bias current, so bias network design determines distortion and control range. Note that NXP has marked the BAP64-03 as End of Life, so new designs should evaluate drop-in alternatives.
This page adds value beyond the datasheet by compiling distributor pricing, drop-in alternatives, lifecycle status, and practical design notes in one place.
直接替換替代品，適用於 BAP64-03,115 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BAP64-03,115 （相同外形與佔位） — 差異在於 Reverse Voltage (VR), Series Inductance, Forward Current (IF), Package, Configuration.
BAP64-02,115
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
BAR64-03WE6327XTSA1
✅ 直接替換📋 參考替代品（不在目錄中）
BAR64-02V
✅ 直接替換📋 參考替代品（不在目錄中）
BAP64-03,115 最大額定值與電氣特性
| Device Type | Silicon PIN diode (RF) |
| 功能 | Current-controlled RF resistor for attenuators and switches |
| Reverse Voltage (VR) | 175 V |
| Forward Current (IF) | 100 mA |
| Power Dissipation | 500 mW |
| Diode Capacitance (Cd) max | 0.35 pF |
| Forward Resistance (RF resistance @ IF) | 0.7 ohm |
| Series Inductance | Low (per NXP feature list) |
| Configuration | Single PIN diode |
| 封裝 | SOD-323 (SC-76) |
| 安裝類型 | Surface Mount |
| Terminals | 2 (gull-wing, dual) |
| 無鹵素 | Compliant |
| RoHS 狀態 | Compliant (,115 ordering suffix) |
| Standard Pack Quantity | 3000 (7 inch reel) |
| 生命週期狀態 | End of Life (per NXP product page) |
BAP64-03,115 腳位配置
| 腳位 1 | K (Cathode) — Cathode terminal of the single PIN diode |
| 腳位 2 | A (Anode) — Anode terminal of the single PIN diode |
典型應用
BAP64-03,115 適用於 6 應用s: RF Attenuators, RF Switches (Series/Shunt), AGC and Gain Control Circuits, RF Limiters and Receiver Protection, VHF/UHF Signal Routing in Test Equipment, Wireless Infrastructure RF Front Ends.
RF Attenuators
The BAP64-03,115 is purpose-built as a current-controlled RF resistor for variable and PIN-diode attenuators. Its 0.7 ohm forward resistance at rated bias and 0.35 pF maximum capacitance give a wide, low-distortion control range with minimal parasitic loss, while the 175 V reverse rating tolerates large RF voltage swings in bridge and series/shunt attenuator topologies. In a typical PI or T attenuator, DC bias current through the diode sets attenuation, so bias-network isolation determines control accuracy. Because the device is EOL, qualify the Infineon BAR64-03 drop-in equivalent for new attenuator designs.
推薦
RF Switches (Series/Shunt)
In series/shunt RF switch configurations, the BAP64-03,115 provides high isolation when reverse-biased, thanks to its 0.35 pF maximum off-state capacitance, and low insertion loss when forward-biased with its approximately 0.7 ohm on-resistance. The 175 V reverse-voltage rating allows handling of high RF signal levels without unintended conduction, and NXP's low series inductance SOD-323 outline keeps resonances above the operating band. Bias tees with RF chokes supply the switching current. Antenna switch modules and TDD front-end circuits benefit most; watch bias-current switching speed against carrier storage time for fast TDD duty cycles.
推薦
AGC and Gain Control Circuits
Automatic gain control loops use the BAP64-03,115 as a voltage/current-variable RF element whose resistance tracks control current smoothly. The silicon PIN structure's wide intrinsic layer yields a monotonic, relatively linear resistance-versus-current characteristic, reducing harmonic and intermodulation distortion in the controlled signal path. The 0.35 pF capacitance keeps the control element from loading the RF circuit at low bias where resistance is highest. Place the diode in a bridged-T or PI attenuator cell driven by an op-amp-controlled current sink; the 100 mA current headroom supports deep attenuation ranges with fast settling.
推薦
RF Limiters and Receiver Protection
The BAP64-03,115 protects sensitive receiver front ends by acting as a self-actuated limiter: strong RF signals forward-bias the PIN diode, whose stored carriers shunt energy away from the low-noise amplifier input. The 175 V reverse rating ensures the device blocks small desired signals with only 0.35 pF of loading, while its silicon PIN structure handles transient power within the 500 mW dissipation rating when used with appropriate limiter topology and heat spreading. Low series inductance of the SOD-323 package preserves broadband limiter behavior. Use multiple stacked diodes for higher power thresholds.
推薦
VHF/UHF Signal Routing in Test Equipment
Instrument-grade signal routing matrices use PIN diode switches for fast, long-life, bounce-free RF path selection. The BAP64-03,115 fits these matrices because it switches within microseconds (controlled by bias current), shows no contact wear, and its 0.7 ohm on-resistance plus 0.35 pF off-capacitance keep channel crosstalk low through the hundreds-of-MHz range. The 175 V rating handles test-signal overloads that electromechanical relays and GaAs switches may not. In a crosspoint array, drive each shunt diode with a decoded current sink and verify hot-switching power stays within the 500 mW package limit.
推薦
Wireless Infrastructure RF Front Ends
Base station and professional radio front ends employ the BAP64-03,115 in attenuator, switch, and protection roles where linearity directly affects ACLR and EVM. The part's low distortion current-controlled resistance, high 175 V RF-swing capability, and 0.35 pF capacitance support high-power channel environments at VHF through microwave bands. Low series inductance from the SOD-323 outline simplifies 50-ohm matching layouts. Given NXP's EOL declaration, infrastructure BOM owners should perform last-time-buy planning and qualify the Infineon BAR64-03 drop-in equivalent to secure long-term supply for field-replaceable modules.
推薦
推薦產品摘要
工程參考資料，適用於 BAP64-03,115 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BAP64-02,115 | BAR64-03WE6327XTSA1 | BAR64-02V |
|---|---|---|---|---|
| Package | SOD-323 | SOD-323 - same | SOD-323 - same | SOD-323 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | Infineon | Infineon |
| Lifecycle Status | End of Life | Active (same family) | Active | Active |
主要差異化特點
- Highest reverse-voltage rating in its family (對比BAP64-02,115)
- Low off-state capacitance for high isolation (對比BAR64-02V)
- Continued-supply risk is its main disadvantage (對比BAR64-03WE6327XTSA1)
設計說明
The BAP64-03 is officially End of Life per the NXP product page. For any new design-in, qualify the Infineon BAR64-03 SOD-323 drop-in equivalent or the same-family BAP64-02 (if the 175 V rating is unnecessary) before committing the layout. For legacy boards, perform a last-time-buy; broker-sourced parts carry elevated counterfeit risk (open-market fake-threat estimates around 50% have been reported by GlobalSpec data), so buy only from authorized distributors such as DigiKey, Mouser, or LCSC.
PIN diode RF resistance is set by DC bias current, so the bias network determines both control range and distortion. Provide high RF isolation between the control port and the RF path (RF chokes or bias resistors of several kilo-ohms) to prevent control-current leakage and signal compression. Keep bias current stable - supply ripple modulates the diode resistance and appears as AM on the RF signal. At the rated bias, expect about 0.7 ohm RF resistance; at milliamp levels, resistance rises by orders of magnitude.
The SOD-323 package is rated for 500 mW dissipation with limited thermal mass. Estimated: continuous operation near the 100 mA forward-current maximum approaches the dissipation limit once RF power is added, so derate bias current at elevated ambient temperatures per the datasheet derating curve. In limiter or hot-switching duty, verify worst-case RF power keeps average dissipation below 500 mW, and use short, wide traces to the pads to spread heat into the PCB copper.
合規資訊
The ,115 ordering suffix denotes NXP RoHS-compliant lead-free packaging. GlobalSpec data reports the part as halogen-free compliant. REACH and conflict-minerals status not stated in provided data.
