IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon
MPN： IRLB8721 ✓ 啟用中IRLB8721 概覽
A power MOSFET is a voltage-controlled semiconductor used as a low-resistance electronic switch. In the power-electronics hierarchy, this IRLB8721 belongs to the N-channel MOSFET, discrete-semiconductor, and power-switching categories. Its low drain-source resistance reduces conduction loss when switching current between a supply and load, while its tab and insulated package support conventional through-hole PCB mounting.
The headline ratings are a 30 V maximum drain-source voltage, 62 A maximum drain current at the stated case condition, 8.7 mOhm maximum drain-source on-resistance, and 7.6 nC total gate charge. The device is specified for logic-level operation at 5 V, making it suitable for low-voltage DC motor, battery, load-switch, power-converter, and embedded-control switching stages. Its maximum gate-source voltage is listed as plus or minus 20 V in the supplied cross-reference data.
The IRLB8721 uses a robust N-channel power-MOSFET structure and an industry-standard TO-220AB through-hole footprint. The verified product listing identifies StrongIRFET technology, while the manufacturer page identifies a 30 V maximum VDS, 8.7 mOhm maximum RDS(on), and 62 A maximum ID. The package is specified as TO-220, and distributor results identify the related IRLB8721PBF ordering code as TO-220AB.
Typical applications include low-voltage DC motor control, battery-powered systems, synchronous rectifier positions, LED and load-switching circuits, and compact power-converter stages. In these applications, the 5 V gate-drive optimization can reduce gate-drive requirements, while the low RDS(on) helps minimize voltage drop and heat generation. Exact current capability still depends on PCB copper, thermal conditions, duty cycle, and the device's stated case-temperature rating.
When designing around the IRLB8721, use the manufacturer datasheet for SOA, transient ratings, thermal resistance, and absolute maximum limits. Keep the gate drive within the verified limits, add a suitable gate resistor to control switching transients, and provide local source and drain copper paths. Because the target is a 30 V device, transient overshoot on a switching node must remain below its rated voltage. This page combines verified manufacturer and distributor facts, application guidance, and the supplied cross-reference information to support component selection.
直接替換替代品，適用於 IRLB8721 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRLB8721 （相同外形與佔位） — 差異在於 Mounting Type.
IRLB8743
✅ 直接替換📋 參考替代品（不在目錄中）
IRLB8748PBF
✅ 直接替換聯絡詢價
查看資料表 →IRLB8721PBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRLR8721
✅ 直接替換📋 參考替代品（不在目錄中）
IRFR1010Z
✅ 直接替換📋 參考替代品（不在目錄中）
IRLB8721 最大額定值與電氣特性
| Drain-Source Voltage | 30 V maximum |
| Continuous Drain Current | 62 A at Tc |
| Drain-Source On-State Resistance | 8.7 mOhm maximum |
| Power Dissipation | 65 W at Tc |
| 閘極-源極電壓 | +/-20 V maximum |
| 總閘極電荷 | 7.6 nC |
| Channel Type | N-channel |
| Technology | StrongIRFET |
| Gate Drive Optimization | 5 V logic-level optimized |
| 封裝 | TO-220AB through-hole package |
| 安裝類型 | Through-hole |
| Device Classification | Power MOSFET |
| Qualification | JEDEC product qualification according to the supplied cross-reference data |
| Related Ordering Code | IRLB8721PBF |
| Manufacturer | Infineon Technologies |
| Manufacturer Product Page | Infineon IRLB8721 |
| Maximum Drain Current Condition | Tc |
| Power Dissipation Condition | Tc |
IRLB8721 to-220ab through-hole package 腳位配置指南
IRLB8721（to-220ab through-hole package 封裝）的腳位配置。 此功率元件具有閘極、汲極與源極端子。對於非極性封裝，請參閱製造商資料表以取得確切的第 1 腳方向與佈局詳細資訊。常見應用包括電源設計、馬達驅動與負載切換。
無詳細腳位定義資料： IRLB8721.
請參閱 資料表 以查看完整腳位配置。
典型應用
IRLB8721 適用於 6 應用s: Low-Voltage DC Motor Control, Battery-Powered Load Switch, Synchronous Rectifier, LED and High-Current Lighting Switch, DC-DC Converter Power Stage, Embedded Low-Voltage Power Control.
Low-Voltage DC Motor Control
The IRLB8721 is well matched to low-voltage DC motor switching because it is a 30 V N-channel MOSFET optimized for a 5 V gate drive and rated for 62 A at Tc. Place it as the high-side or low-side switch only after checking the motor's stalled current and inductive voltage spikes. Its maximum RDS(on) of 8.7 mOhm can reduce conduction loss, while the TO-220AB package provides a robust through-hole thermal path. A flyback diode, TVS clamp, or other snubber is essential when the motor inductance can raise the drain voltage above 30 V during turn-off.
推薦
Battery-Powered Load Switch
For a battery-powered load switch, the IRLB8721's 30 V VDS rating and 5 V gate-drive optimization support operation from low-voltage cells and regulated rails. The 8.7 mOhm maximum RDS(on) helps limit voltage drop when the device remains on, while the 62 A device rating provides substantial current margin for short-duration peaks. Because the target is a discrete power MOSFET, use a low-inductance source connection, a defined gate resistor, and a current-limit or thermal strategy appropriate to the battery chemistry. The supplied data does not provide battery-specific SOA, so validate the load transient and fault condition before release.
推薦
Synchronous Rectifier
The IRLB8721 can serve as a low-voltage synchronous-rectifier MOSFET when the switching node remains below 30 V and the gate driver can operate near 5 V. Its 8.7 mOhm maximum RDS(on) is useful where conduction loss dominates at moderate output current, and the 7.6 nC total gate charge provides a concrete switching-loss check for the design. The exact suitability depends on rectifier topology, dead time, body-diode behavior, and the manufacturer's SOA data. Use Kelvin source routing when accurate current sharing and low-side sensing are required.
推薦
LED and High-Current Lighting Switch
The IRLB8721 is suitable for a low-voltage LED or high-current lighting switch when the load is supplied below 30 V and controlled by a 5 V gate signal. The device's 8.7 mOhm maximum on-resistance limits resistive drop in the conducting state, and its 62 A Tc rating provides a useful device-level current reference. LED wiring inductance can still create voltage spikes, so place the switch close to the load and use a suitable clamp or freewheeling path. Confirm LED current, PWM duty cycle, junction temperature, and case-to-ambient thermal resistance in the final assembly.
推薦
DC-DC Converter Power Stage
In a low-voltage DC-DC converter, the IRLB8721 can serve as a switching element when its 30 V drain-source limit provides sufficient transient margin. Its maximum RDS(on) of 8.7 mOhm helps determine conduction loss, while the 7.6 nC total gate charge informs gate-drive and transition-loss estimates. The component is optimized for 5 V gate drive, which can simplify control interfacing, but the converter still needs proper high-side or low-side topology and dead-time handling. Verify the datasheet switching-energy curves, SOA, and thermal data before selecting it for a production converter.
推薦
Embedded Low-Voltage Power Control
The IRLB8721 is appropriate for embedded systems that use a controller's 5 V output to switch a separate low-voltage power domain. The logic-level gate-drive optimization avoids relying on a high-voltage gate driver, and the TO-220AB package is useful for through-hole industrial control boards where repairability and thermal inspection matter. Firmware and hardware must include a default-off gate state because the MOSFET does not provide isolation or a built-in pull-down. A gate resistor, local source return, and fault-current response are required to keep the 30 V device within its operating envelope.
推薦
推薦產品摘要
工程參考資料，適用於 IRLB8721 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRLB8743 | IRLB8748 | IRLB8721PBF | IRLR8721 | IRFR1010Z |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
主要差異化特點
- 30 V low-voltage switching rating (對比IRLB8743)
- Maximum RDS(on) of 8.7 mOhm (對比IRLB8748)
- 5 V gate-drive optimization (對比IRFR1010Z)
設計說明
Estimated: using the verified 8.7 mOhm maximum RDS(on) and a 10 A on-state current, the conduction loss estimate is I²R = 10² × 0.0087 = 0.87 W. At 20 A, the same estimate is 20² × 0.0087 = 3.48 W. These are estimates using only the maximum specified RDS(on), not guaranteed operating points. Use the actual hot RDS(on), switching loss, ambient temperature, and PCB copper area for thermal design.
Place the IRLB8721 close to the load or switching node so the high-current drain and source paths remain short. Keep the gate trace away from the drain and source copper to reduce dv/dt-induced false turn-on. A small gate resistor can damp gate ringing, while the source return should follow the same current path as the power source connection. For Kelvin sensing, route the measurement return separately from the high-current source path.
Do not treat the 62 A rating as a guaranteed PCB load current. The rating is tied to Tc and does not remove the need to check SOA, switching transients, duty cycle, junction temperature, and copper thermal performance. In inductive circuits, add a clamp or freewheeling path and verify that drain overshoot remains below the 30 V VDS rating. Also confirm the exact IRLB8721 versus IRLB8721PBF ordering code before purchasing.
合規資訊
The supplied data states product qualification according to JEDEC in one cross-reference result, but it does not provide RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals declarations. Compliance status remains unknown rather than inferred.
