IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon
Teilenummer: IRLB8721 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
IRLB8721 Übersicht
A power MOSFET is a voltage-controlled semiconductor used as a low-resistance electronic switch. In the power-electronics hierarchy, this IRLB8721 belongs to the N-channel MOSFET, discrete-semiconductor, and power-switching categories. Its low drain-source resistance reduces conduction loss when switching current between a supply and load, while its tab and insulated package support conventional through-hole PCB mounting.
The headline ratings are a 30 V maximum drain-source voltage, 62 A maximum drain current at the stated case condition, 8.7 mOhm maximum drain-source on-resistance, and 7.6 nC total gate charge. The device is specified for logic-level operation at 5 V, making it suitable for low-voltage DC motor, battery, load-switch, power-converter, and embedded-control switching stages. Its maximum gate-source voltage is listed as plus or minus 20 V in the supplied cross-reference data.
The IRLB8721 uses a robust N-channel power-MOSFET structure and an industry-standard TO-220AB through-hole footprint. The verified product listing identifies StrongIRFET technology, while the manufacturer page identifies a 30 V maximum VDS, 8.7 mOhm maximum RDS(on), and 62 A maximum ID. The package is specified as TO-220, and distributor results identify the related IRLB8721PBF ordering code as TO-220AB.
Typical applications include low-voltage DC motor control, battery-powered systems, synchronous rectifier positions, LED and load-switching circuits, and compact power-converter stages. In these applications, the 5 V gate-drive optimization can reduce gate-drive requirements, while the low RDS(on) helps minimize voltage drop and heat generation. Exact current capability still depends on PCB copper, thermal conditions, duty cycle, and the device's stated case-temperature rating.
When designing around the IRLB8721, use the manufacturer datasheet for SOA, transient ratings, thermal resistance, and absolute maximum limits. Keep the gate drive within the verified limits, add a suitable gate resistor to control switching transients, and provide local source and drain copper paths. Because the target is a 30 V device, transient overshoot on a switching node must remain below its rated voltage. This page combines verified manufacturer and distributor facts, application guidance, and the supplied cross-reference information to support component selection.
Drop-in-Alternativen für IRLB8721 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRLB8721 (gleiche Bauform und Footprint) – abweichend in Mounting Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRLB8743
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRLB8748PBF
✅ Drop-In✓ Auf Lager
$0.68 / Stück
Datenblatt ansehen →IRLB8721PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRLR8721
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRFR1010Z
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRLB8721 Grenzwerte & elektrische Eigenschaften
| Drain-Source Voltage | 30 V maximum |
| Continuous Drain Current | 62 A at Tc |
| Drain-Source On-State Resistance | 8.7 mOhm maximum |
| Power Dissipation | 65 W at Tc |
| Gate-Source-Spannung | +/-20 V maximum |
| Gesamt-Gate-Ladung | 7.6 nC |
| Channel Type | N-channel |
| Technology | StrongIRFET |
| Gate Drive Optimization | 5 V logic-level optimized |
| Gehäuse | TO-220AB through-hole package |
| Montageart | Through-hole |
| Device Classification | Power MOSFET |
| Qualification | JEDEC product qualification according to the supplied cross-reference data |
| Related Ordering Code | IRLB8721PBF |
| Manufacturer | Infineon Technologies |
| Manufacturer Product Page | Infineon IRLB8721 |
| Maximum Drain Current Condition | Tc |
| Power Dissipation Condition | Tc |
IRLB8721 to-220ab through-hole package Pinbelegungsleitfaden
Pinbelegung für IRLB8721 (to-220ab through-hole package-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für IRLB8721.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
IRLB8721 ist geeignet für 6 Anwendungs: Low-Voltage DC Motor Control, Battery-Powered Load Switch, Synchronous Rectifier, LED and High-Current Lighting Switch, DC-DC Converter Power Stage, Embedded Low-Voltage Power Control.
Low-Voltage DC Motor Control
The IRLB8721 is well matched to low-voltage DC motor switching because it is a 30 V N-channel MOSFET optimized for a 5 V gate drive and rated for 62 A at Tc. Place it as the high-side or low-side switch only after checking the motor's stalled current and inductive voltage spikes. Its maximum RDS(on) of 8.7 mOhm can reduce conduction loss, while the TO-220AB package provides a robust through-hole thermal path. A flyback diode, TVS clamp, or other snubber is essential when the motor inductance can raise the drain voltage above 30 V during turn-off.
Empfohlen
Battery-Powered Load Switch
For a battery-powered load switch, the IRLB8721's 30 V VDS rating and 5 V gate-drive optimization support operation from low-voltage cells and regulated rails. The 8.7 mOhm maximum RDS(on) helps limit voltage drop when the device remains on, while the 62 A device rating provides substantial current margin for short-duration peaks. Because the target is a discrete power MOSFET, use a low-inductance source connection, a defined gate resistor, and a current-limit or thermal strategy appropriate to the battery chemistry. The supplied data does not provide battery-specific SOA, so validate the load transient and fault condition before release.
Empfohlen
Synchronous Rectifier
The IRLB8721 can serve as a low-voltage synchronous-rectifier MOSFET when the switching node remains below 30 V and the gate driver can operate near 5 V. Its 8.7 mOhm maximum RDS(on) is useful where conduction loss dominates at moderate output current, and the 7.6 nC total gate charge provides a concrete switching-loss check for the design. The exact suitability depends on rectifier topology, dead time, body-diode behavior, and the manufacturer's SOA data. Use Kelvin source routing when accurate current sharing and low-side sensing are required.
Empfohlen
LED and High-Current Lighting Switch
The IRLB8721 is suitable for a low-voltage LED or high-current lighting switch when the load is supplied below 30 V and controlled by a 5 V gate signal. The device's 8.7 mOhm maximum on-resistance limits resistive drop in the conducting state, and its 62 A Tc rating provides a useful device-level current reference. LED wiring inductance can still create voltage spikes, so place the switch close to the load and use a suitable clamp or freewheeling path. Confirm LED current, PWM duty cycle, junction temperature, and case-to-ambient thermal resistance in the final assembly.
Empfohlen
DC-DC Converter Power Stage
In a low-voltage DC-DC converter, the IRLB8721 can serve as a switching element when its 30 V drain-source limit provides sufficient transient margin. Its maximum RDS(on) of 8.7 mOhm helps determine conduction loss, while the 7.6 nC total gate charge informs gate-drive and transition-loss estimates. The component is optimized for 5 V gate drive, which can simplify control interfacing, but the converter still needs proper high-side or low-side topology and dead-time handling. Verify the datasheet switching-energy curves, SOA, and thermal data before selecting it for a production converter.
Empfohlen
Embedded Low-Voltage Power Control
The IRLB8721 is appropriate for embedded systems that use a controller's 5 V output to switch a separate low-voltage power domain. The logic-level gate-drive optimization avoids relying on a high-voltage gate driver, and the TO-220AB package is useful for through-hole industrial control boards where repairability and thermal inspection matter. Firmware and hardware must include a default-off gate state because the MOSFET does not provide isolation or a built-in pull-down. A gate resistor, local source return, and fault-current response are required to keep the 30 V device within its operating envelope.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRLB8721 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRLB8743 | IRLB8748 | IRLB8721PBF | IRLR8721 | IRFR1010Z |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Wichtigste Unterscheidungsmerkmale
- 30 V low-voltage switching rating (vs. IRLB8743)
- Maximum RDS(on) of 8.7 mOhm (vs. IRLB8748)
- 5 V gate-drive optimization (vs. IRFR1010Z)
Designhinweise
Estimated: using the verified 8.7 mOhm maximum RDS(on) and a 10 A on-state current, the conduction loss estimate is I²R = 10² × 0.0087 = 0.87 W. At 20 A, the same estimate is 20² × 0.0087 = 3.48 W. These are estimates using only the maximum specified RDS(on), not guaranteed operating points. Use the actual hot RDS(on), switching loss, ambient temperature, and PCB copper area for thermal design.
Place the IRLB8721 close to the load or switching node so the high-current drain and source paths remain short. Keep the gate trace away from the drain and source copper to reduce dv/dt-induced false turn-on. A small gate resistor can damp gate ringing, while the source return should follow the same current path as the power source connection. For Kelvin sensing, route the measurement return separately from the high-current source path.
Do not treat the 62 A rating as a guaranteed PCB load current. The rating is tied to Tc and does not remove the need to check SOA, switching transients, duty cycle, junction temperature, and copper thermal performance. In inductive circuits, add a clamp or freewheeling path and verify that drain overshoot remains below the 30 V VDS rating. Also confirm the exact IRLB8721 versus IRLB8721PBF ordering code before purchasing.
Compliance-Informationen
The supplied data states product qualification according to JEDEC in one cross-reference result, but it does not provide RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals declarations. Compliance status remains unknown rather than inferred.
