LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI
MPN： LMG2104R044 ✓ 啟用中LMG2104R044 概覽
A GaN (Gallium Nitride) half-bridge power stage is a fully integrated switching building block that places two GaN transistors and their gate drive on one substrate. Compared to discrete Si MOSFET half-bridges, GaN devices offer much lower switching loss, lower gate charge, and zero reverse-recovery charge, allowing converters to switch at 1 MHz and above. The half-bridge power stage sits in the broader power electronics hierarchy as: GaN FET -> GaN half-bridge -> power stage -> DC-DC converter / motor driver / class-D amplifier. The LMG2104R044 also integrates protection and a proprietary bootstrap regulator, simplifying the high-side gate-drive design that normally requires an external bootstrap diode and bias supply.
Key specifications include 100 V drain-source blocking voltage, 4.4 mΩ typical Rds(on), integrated half-bridge topology, TTL-compatible 3.3 V / 5 V logic inputs, integrated bootstrap voltage regulator, and smart switching features. Smart-switching technology auto-tunes dead-time to minimize body-diode conduction and prevents simultaneous turn-on of both FETs, increasing efficiency and reducing EMI. The device operates from a single supply and supports high-side and low-side PWM inputs with internal level shifting.
The LMG2104R044 uses TI's enhancement-mode GaN-on-Si process and integrates the gate driver close to the die to minimize parasitic loop inductance. A proprietary bootstrap voltage control regulates the high-side gate within the safe operating range regardless of VCC level. Internal protection features include undervoltage lockout on both VCC and the bootstrap rail, thermal shutdown, and short-circuit / overcurrent protection that de-glitches the gate driver when excessive current is detected.
Typical applications include 48 V to point-of-load DC-DC converters, class-D audio amplifiers, motor drives, telecom brick converters, and high-density synchronous rectification. The integrated driver and protection features significantly reduce PCB area versus equivalent discrete half-bridge implementations.
When designing with the LMG2104R044, place input ceramic bypass capacitors as close as possible to the power and signal pins to minimize high-frequency loop inductance. The exposed pad must be soldered to a sufficiently large copper pour for thermal relief - GaN power stages can switch at MHz frequencies and dissipate meaningful conduction loss at high currents.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
直接替換替代品，適用於 LMG2104R044 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： LMG2104R044 （相同外形與佔位） — 差異在於 Package, Topology.
LMG2104R022
✅ 直接替換聯絡詢價
查看資料表 →LMG2105R044
✅ 直接替換📋 參考替代品（不在目錄中）
LMG2105R022
✅ 直接替換📋 參考替代品（不在目錄中）
LMG2100R044
✅ 直接替換📋 參考替代品（不在目錄中）
LMG2104R044 最大額定值與電氣特性
| 拓撲 | Half-Bridge (high-side + low-side) |
| Switch Type | Enhancement-mode GaN FET |
| Drain-Source Blocking Voltage | 100 V |
| Typical Rds(on) per FET | 4.4 mΩ |
| Integrated Gate Driver | Yes |
| Integrated Bootstrap Regulator | Yes |
| Logic Input Compatibility | TTL, 3.3 V and 5 V |
| Dead-Time Control | Smart-Switching auto dead-time |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) |
| 過熱關機 | Yes |
| Short-Circuit / Overcurrent Protection | Yes |
| 封裝 | QFN 5 mm x 4 mm |
| 工作溫度 | -40C to +125C |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
LMG2104R044 qfn 5 mm x 4 mm 腳位配置指南
LMG2104R044（qfn 5 mm x 4 mm 封裝）的腳位配置。 此功率元件具有閘極、汲極與源極端子。對於非極性封裝，請參閱製造商資料表以取得確切的第 1 腳方向與佈局詳細資訊。常見應用包括電源設計、馬達驅動與負載切換。
無詳細腳位定義資料： LMG2104R044.
請參閱 資料表 以查看完整腳位配置。
安全工作區 - GaN Half-Bridge Power Stage
典型應用
LMG2104R044 適用於 6 應用s: 48 V to Point-of-Load DC-DC Converter, Class-D Audio Amplifier Output Stage, Brushless DC Motor Drive, Telecom Brick Converter (48 V Intermediate Bus), Synchronous Rectification in High-Density SMPS, Industrial 24 V / 36 V Bus Power Conversion.
48 V to Point-of-Load DC-DC Converter
The LMG2104R044 is ideal for 48 V nominal bus to point-of-load (PoL) DC-DC converters in datacenter and telecom systems where 60 V maximum input must be tolerated. The 100 V drain-source blocking voltage provides adequate margin above the 48 V rail plus transient overshoot, while the 4.4 mΩ typical Rds(on) keeps conduction loss low at high secondary currents. At MHz-class switching frequencies enabled by GaN, designers can shrink magnetics and output capacitance by 3-5x versus Si MOSFET half-bridges. According to TI, the integrated driver and bootstrap regulator reduce external component count, simplifying PCB layout for dense multi-rail designs.
推薦
Class-D Audio Amplifier Output Stage
In class-D audio amplifiers, the LMG2104R044 forms the high-side / low-side output stage driving the LC reconstruction filter and loudspeaker. GaN's near-zero reverse-recovery charge eliminates the dead-time distortion typical of Si MOSFET class-D designs, improving THD+N at low output levels. The 4.4 mΩ Rds(on) keeps idle-channel losses low, while the integrated gate driver and smart-switching dead-time control simplify the analog front-end design. According to TI, the device can switch at 500 kHz to 1 MHz with high efficiency, enabling smaller output filters and lower amplifier weight for powered speakers and subwoofers.
推薦
Brushless DC Motor Drive
Three-phase brushless DC (BLDC) motor drives benefit from the LMG2104R044 as a half-bridge building block per phase, where each device drives the high-side and low-side FETs of one motor phase winding. The 100 V blocking supports 24 V to 72 V battery systems used in e-mobility, drones, and industrial servo drives, while the integrated driver reduces the per-phase PCB area compared to discrete GaN. The smart-switching auto dead-time prevents shoot-through even at variable PWM duty cycles, increasing reliability. According to TI, GaN switching at high PWM frequency produces smoother torque ripple and lower acoustic noise than equivalent Si drives.
推薦
Telecom Brick Converter (48 V Intermediate Bus)
Intermediate bus converters (IBCs) in telecom and networking hardware convert 48 V to an intermediate 12 V or 5 V bus with high efficiency and power density. The LMG2104R044's 100 V rating, low 4.4 mΩ Rds(on), and MHz switching capability allow IBC designers to push power density above 1000 W/in³. The integrated protection (UVLO, thermal shutdown, short-circuit) supports fault-tolerant operation required by telco-grade hardware. According to TI, the device pairs well with a PFC front end to form a complete 48 V power-conversion solution with minimal external circuitry.
推薦
Synchronous Rectification in High-Density SMPS
The LMG2104R044 can replace Si MOSFET synchronous rectifiers in high-density switch-mode power supplies where efficiency at high frequency is paramount. GaN's lower gate charge and zero reverse-recovery charge reduce switching loss dramatically above 500 kHz, enabling higher frequency operation with smaller magnetics. According to TI, designers can use the LMG2104R044 on the secondary side of an isolated forward or half-bridge converter to gain 1-3 percent efficiency improvement and reduce thermal stress in compact adapters and brick converters.
推薦
Industrial 24 V / 36 V Bus Power Conversion
Industrial automation equipment operating on 24 V or 36 V DC bus rails benefits from the LMG2104R044 as a half-bridge power stage. The 100 V blocking voltage provides ample margin for bus transients and inductive ringing on long cable runs typical of factory environments. According to TI, the integrated protection (UVLO, OCP, thermal shutdown) simplifies compliance with industrial safety and reliability standards. GaN's high switching frequency enables smaller filter inductors, supporting compact DIN-rail-mounted power modules with high efficiency across load range.
推薦
推薦產品摘要
工程參考資料，適用於 LMG2104R044 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | LMG2104R022 | LMG2105R044 | LMG2105R022 | LMG2100R044 |
|---|---|---|---|---|---|
| Package | QFN 5x4 mm | QFN 5x4 mm - same | QFN 5x4 mm - same | QFN 5x4 mm - same | QFN 5x4 mm - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Topology | Half-Bridge GaN | Half-Bridge GaN | Half-Bridge GaN | Half-Bridge GaN | Half-Bridge GaN |
| Drain-Source Voltage | 100 V | 100 V | 100 V | 100 V | 100 V |
| Rds(on) per FET | 4.4 mΩ | 2.2 mΩ | 4.4 mΩ | 2.2 mΩ | 4.4 mΩ |
| Integrated Gate Driver | Yes | Yes | Yes | Yes | Yes |
| Integrated Bootstrap Regulator | Yes | Yes | Yes | Yes | Yes |
| Smart-Switching Auto Dead-Time | Yes | Yes | Yes | Yes | Yes |
| Series Feature Set | Baseline | Baseline + lower Rds(on) | Extended protection | Extended + lower Rds(on) | Legacy family member |
主要差異化特點
- Integrated gate driver and bootstrap regulator (對比LMG2104R022)
- Baseline vs extended protection feature set (對比LMG2105R044)
- Family swap flexibility on same PCB (對比LMG2105R022)
設計說明
Place input ceramic bypass capacitors as close as possible to the power and signal pins to minimize high-frequency loop inductance. According to TI, the exposed thermal pad must be soldered to a sufficiently large PCB copper pour to dissipate heat from the GaN FETs. At MHz-class switching, even small parasitic inductance causes voltage overshoot and EMI, so use short, wide power traces and a solid ground plane.
Estimated: at 20 A continuous current, the LMG2104R044 dissipates approximately I² x R = 20² x 0.0044 = 1.76 W per FET, for a total of about 3.5 W in the package at room temperature. With a typical QFN theta_JA around 35-50 C/W on a standard 4-layer PCB, this yields roughly 120-175 C junction rise at 20 A. Designers must ensure adequate copper area and forced-air cooling for sustained high-current operation.
Do not exceed the 100 V drain-source blocking voltage under any operating or transient condition. According to TI, the GaN FETs are sensitive to overvoltage events - add a TVS clamp or snubber across the switch node if long motor leads or inductive loads can produce voltage spikes above 100 V. Always respect the bootstrap voltage rating when designing the high-side gate drive supply.
Minimize the high-side switch-node loop area by placing the input capacitor, high-side GaN FET, and low-side GaN FET in a tight, symmetrical layout. According to TI, the smart-switching feature reduces dead-time loss, but PCB layout still dominates high-frequency efficiency. Use a 4-layer PCB with a continuous ground plane directly under the power stage to suppress common-mode noise.
合規資訊
RoHS compliant per TI product page. AEC-Q100 status not specified for this part - contact TI for automotive-grade variants. Halogen-free status not explicitly confirmed in available data.
