LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI
部品番号: LMG2104R044 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $9.5 | $9.50 |
| 10 | $8.55 | $85.50 |
| 100 | $7.6 | $760.00 |
| 500 | $6.84 | $3,420.00 |
| 1,000 | $6.08 | $6,080.00 |
LMG2104R044 概要
A GaN (Gallium Nitride) half-bridge power stage is a fully integrated switching building block that places two GaN transistors and their gate drive on one substrate. Compared to discrete Si MOSFET half-bridges, GaN devices offer much lower switching loss, lower gate charge, and zero reverse-recovery charge, allowing converters to switch at 1 MHz and above. The half-bridge power stage sits in the broader power electronics hierarchy as: GaN FET -> GaN half-bridge -> power stage -> DC-DC converter / motor driver / class-D amplifier. The LMG2104R044 also integrates protection and a proprietary bootstrap regulator, simplifying the high-side gate-drive design that normally requires an external bootstrap diode and bias supply.
Key specifications include 100 V drain-source blocking voltage, 4.4 mΩ typical Rds(on), integrated half-bridge topology, TTL-compatible 3.3 V / 5 V logic inputs, integrated bootstrap voltage regulator, and smart switching features. Smart-switching technology auto-tunes dead-time to minimize body-diode conduction and prevents simultaneous turn-on of both FETs, increasing efficiency and reducing EMI. The device operates from a single supply and supports high-side and low-side PWM inputs with internal level shifting.
The LMG2104R044 uses TI's enhancement-mode GaN-on-Si process and integrates the gate driver close to the die to minimize parasitic loop inductance. A proprietary bootstrap voltage control regulates the high-side gate within the safe operating range regardless of VCC level. Internal protection features include undervoltage lockout on both VCC and the bootstrap rail, thermal shutdown, and short-circuit / overcurrent protection that de-glitches the gate driver when excessive current is detected.
Typical applications include 48 V to point-of-load DC-DC converters, class-D audio amplifiers, motor drives, telecom brick converters, and high-density synchronous rectification. The integrated driver and protection features significantly reduce PCB area versus equivalent discrete half-bridge implementations.
When designing with the LMG2104R044, place input ceramic bypass capacitors as close as possible to the power and signal pins to minimize high-frequency loop inductance. The exposed pad must be soldered to a sufficiently large copper pour for thermal relief - GaN power stages can switch at MHz frequencies and dissipate meaningful conduction loss at high currents.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: LMG2104R044 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: LMG2104R044 （同一形状・フットプリント） — 相違点: Package, Topology.
クイック比較ツール — 並列比較する代替部品を選択:
LMG2104R022
✅ ドロップイン✓ 在庫あり
$2.79 / 個
データシートを見る →LMG2105R044
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG2105R022
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG2100R044
✅ ドロップイン📋 参考代替品（カタログ未掲載）
LMG2104R044 最大定格＆電気的特性
| トポロジー | Half-Bridge (high-side + low-side) |
| Switch Type | Enhancement-mode GaN FET |
| Drain-Source Blocking Voltage | 100 V |
| Typical Rds(on) per FET | 4.4 mΩ |
| Integrated Gate Driver | Yes |
| Integrated Bootstrap Regulator | Yes |
| Logic Input Compatibility | TTL, 3.3 V and 5 V |
| Dead-Time Control | Smart-Switching auto dead-time |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) |
| 熱シャットダウン | Yes |
| Short-Circuit / Overcurrent Protection | Yes |
| パッケージ | QFN 5 mm x 4 mm |
| 動作温度 | -40C to +125C |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
LMG2104R044 qfn 5 mm x 4 mm ピン配置ガイド
LMG2104R044 (qfn 5 mm x 4 mm パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: LMG2104R044.
詳細は データシート をご参照ください。
安全動作領域 - GaN Half-Bridge Power Stage
主な用途
LMG2104R044 の用途: 6 件s: 48 V to Point-of-Load DC-DC Converter, Class-D Audio Amplifier Output Stage, Brushless DC Motor Drive, Telecom Brick Converter (48 V Intermediate Bus), Synchronous Rectification in High-Density SMPS, Industrial 24 V / 36 V Bus Power Conversion.
48 V to Point-of-Load DC-DC Converter
The LMG2104R044 is ideal for 48 V nominal bus to point-of-load (PoL) DC-DC converters in datacenter and telecom systems where 60 V maximum input must be tolerated. The 100 V drain-source blocking voltage provides adequate margin above the 48 V rail plus transient overshoot, while the 4.4 mΩ typical Rds(on) keeps conduction loss low at high secondary currents. At MHz-class switching frequencies enabled by GaN, designers can shrink magnetics and output capacitance by 3-5x versus Si MOSFET half-bridges. According to TI, the integrated driver and bootstrap regulator reduce external component count, simplifying PCB layout for dense multi-rail designs.
おすすめ
Class-D Audio Amplifier Output Stage
In class-D audio amplifiers, the LMG2104R044 forms the high-side / low-side output stage driving the LC reconstruction filter and loudspeaker. GaN's near-zero reverse-recovery charge eliminates the dead-time distortion typical of Si MOSFET class-D designs, improving THD+N at low output levels. The 4.4 mΩ Rds(on) keeps idle-channel losses low, while the integrated gate driver and smart-switching dead-time control simplify the analog front-end design. According to TI, the device can switch at 500 kHz to 1 MHz with high efficiency, enabling smaller output filters and lower amplifier weight for powered speakers and subwoofers.
おすすめ
Brushless DC Motor Drive
Three-phase brushless DC (BLDC) motor drives benefit from the LMG2104R044 as a half-bridge building block per phase, where each device drives the high-side and low-side FETs of one motor phase winding. The 100 V blocking supports 24 V to 72 V battery systems used in e-mobility, drones, and industrial servo drives, while the integrated driver reduces the per-phase PCB area compared to discrete GaN. The smart-switching auto dead-time prevents shoot-through even at variable PWM duty cycles, increasing reliability. According to TI, GaN switching at high PWM frequency produces smoother torque ripple and lower acoustic noise than equivalent Si drives.
おすすめ
Telecom Brick Converter (48 V Intermediate Bus)
Intermediate bus converters (IBCs) in telecom and networking hardware convert 48 V to an intermediate 12 V or 5 V bus with high efficiency and power density. The LMG2104R044's 100 V rating, low 4.4 mΩ Rds(on), and MHz switching capability allow IBC designers to push power density above 1000 W/in³. The integrated protection (UVLO, thermal shutdown, short-circuit) supports fault-tolerant operation required by telco-grade hardware. According to TI, the device pairs well with a PFC front end to form a complete 48 V power-conversion solution with minimal external circuitry.
おすすめ
Synchronous Rectification in High-Density SMPS
The LMG2104R044 can replace Si MOSFET synchronous rectifiers in high-density switch-mode power supplies where efficiency at high frequency is paramount. GaN's lower gate charge and zero reverse-recovery charge reduce switching loss dramatically above 500 kHz, enabling higher frequency operation with smaller magnetics. According to TI, designers can use the LMG2104R044 on the secondary side of an isolated forward or half-bridge converter to gain 1-3 percent efficiency improvement and reduce thermal stress in compact adapters and brick converters.
おすすめ
Industrial 24 V / 36 V Bus Power Conversion
Industrial automation equipment operating on 24 V or 36 V DC bus rails benefits from the LMG2104R044 as a half-bridge power stage. The 100 V blocking voltage provides ample margin for bus transients and inductive ringing on long cable runs typical of factory environments. According to TI, the integrated protection (UVLO, OCP, thermal shutdown) simplifies compliance with industrial safety and reliability standards. GaN's high switching frequency enables smaller filter inductors, supporting compact DIN-rail-mounted power modules with high efficiency across load range.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: LMG2104R044 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | LMG2104R022 | LMG2105R044 | LMG2105R022 | LMG2100R044 |
|---|---|---|---|---|---|
| Package | QFN 5x4 mm | QFN 5x4 mm - same | QFN 5x4 mm - same | QFN 5x4 mm - same | QFN 5x4 mm - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Topology | Half-Bridge GaN | Half-Bridge GaN | Half-Bridge GaN | Half-Bridge GaN | Half-Bridge GaN |
| Drain-Source Voltage | 100 V | 100 V | 100 V | 100 V | 100 V |
| Rds(on) per FET | 4.4 mΩ | 2.2 mΩ | 4.4 mΩ | 2.2 mΩ | 4.4 mΩ |
| Integrated Gate Driver | Yes | Yes | Yes | Yes | Yes |
| Integrated Bootstrap Regulator | Yes | Yes | Yes | Yes | Yes |
| Smart-Switching Auto Dead-Time | Yes | Yes | Yes | Yes | Yes |
| Series Feature Set | Baseline | Baseline + lower Rds(on) | Extended protection | Extended + lower Rds(on) | Legacy family member |
主な差別化要因
- Integrated gate driver and bootstrap regulator （vs LMG2104R022)
- Baseline vs extended protection feature set （vs LMG2105R044)
- Family swap flexibility on same PCB （vs LMG2105R022)
設計ノート
Place input ceramic bypass capacitors as close as possible to the power and signal pins to minimize high-frequency loop inductance. According to TI, the exposed thermal pad must be soldered to a sufficiently large PCB copper pour to dissipate heat from the GaN FETs. At MHz-class switching, even small parasitic inductance causes voltage overshoot and EMI, so use short, wide power traces and a solid ground plane.
Estimated: at 20 A continuous current, the LMG2104R044 dissipates approximately I² x R = 20² x 0.0044 = 1.76 W per FET, for a total of about 3.5 W in the package at room temperature. With a typical QFN theta_JA around 35-50 C/W on a standard 4-layer PCB, this yields roughly 120-175 C junction rise at 20 A. Designers must ensure adequate copper area and forced-air cooling for sustained high-current operation.
Do not exceed the 100 V drain-source blocking voltage under any operating or transient condition. According to TI, the GaN FETs are sensitive to overvoltage events - add a TVS clamp or snubber across the switch node if long motor leads or inductive loads can produce voltage spikes above 100 V. Always respect the bootstrap voltage rating when designing the high-side gate drive supply.
Minimize the high-side switch-node loop area by placing the input capacitor, high-side GaN FET, and low-side GaN FET in a tight, symmetrical layout. According to TI, the smart-switching feature reduces dead-time loss, but PCB layout still dominates high-frequency efficiency. Use a 4-layer PCB with a continuous ground plane directly under the power stage to suppress common-mode noise.
コンプライアンス情報
RoHS compliant per TI product page. AEC-Q100 status not specified for this part - contact TI for automotive-grade variants. Halogen-free status not explicitly confirmed in available data.
