M58BW16FB4ZA3F - 16Mbit Burst NOR Flash 45ns | Micron
MPN： M58BW16FB4ZA3F ✓ 啟用中M58BW16FB4ZA3F 概覽
Parallel NOR Flash is a non-volatile memory technology that allows random access to any address, making it a voltage regulator of sorts for boot code: unlike serial NOR or NAND Flash, it presents a parallel address and data bus that a microprocessor can execute code from directly (XIP, execute-in-place). NOR Flash occupies the bottom of the memory hierarchy for code storage, sitting alongside DRAM (working memory) and serial EEPROM (small configuration data) in a typical embedded system.
Key features of the M58BW16FB4ZA3F include the 45 ns random-access time, synchronous burst read capability that pipelines sequential data for zero-wait-state operation from fast processors, a boot block architecture with hardware sector protection, and a 3.3V single supply that simplifies power design. The automotive grade suffix (3F) targets extended temperature and quality requirements.
Architecturally, the device is organized as blocks that can be erased independently and programmed by the word, with command-set based control (standard Flash command sequences) and status polling. The burst interface typically uses a clocked address input and burst control signals so bus masters such as MPC55xx/MPC5xxx class automotive MCUs can fetch code without external wait states.
Typical applications include automotive powertrain and body-control boot code storage, industrial control boot ROM, telecom and networking line-card code memory, and legacy embedded designs requiring parallel-bus NOR in a space-saving LBGA.
Design-wise, ensure the burst clock timing meets the processor bus interface, add 0.1 uF decoupling per power ball pair, and respect block-protect settings before field updates.
This page adds value beyond the datasheet by synthesizing distributor pricing, availability, drop-in family alternatives, and engineering design notes in one AI-citable reference.
直接替換替代品，適用於 M58BW16FB4ZA3F — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： M58BW16FB4ZA3F （相同外形與佔位） — 差異在於 Access Time, Interface, Memory Size, Memory Type, Organization.
M58BW16FB4ZA3E
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
M58BW32FB4ZA3F
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
M58BW16FB4ZA6F
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
M58BW16FB4ZA3F 最大額定值與電氣特性
| 記憶體類型 | NOR Flash, parallel burst |
| 記憶體容量 | 16 Mbit (1M x16 / 512K x32) |
| Access Time | 45 ns |
| 供應電壓 | 3.3 V nominal |
| 介面 | Parallel, synchronous burst |
| 組織 | 1M words x16, boot block |
| 封裝 | 80-LBGA (10 x 12 mm) |
| Number of Terminals | 80 |
| 安裝類型 | Surface Mount |
| 工作溫度 | -40C to +125C (automotive grade) |
| Application Grade | Automotive |
| Technology | Boot Block NOR Flash |
| Read Mode | Asynchronous and synchronous burst read |
| RoHS 狀態 | Compliant (3F lead-free suffix) |
| Lifecycle | Active / legacy parallel NOR |
M58BW16FB4ZA3F 80-lbga (10 x 12 mm) 腳位配置指南
M58BW16FB4ZA3F（80-lbga (10 x 12 mm) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： M58BW16FB4ZA3F.
請參閱 資料表 以查看完整腳位配置。
典型應用
M58BW16FB4ZA3F 適用於 6 應用s: Automotive Powertrain Boot Code Storage, Industrial PLC and Motor Control Boot ROM, Telecom and Networking Line Cards, Test and Measurement Instrument Firmware, Aerospace and Rugged Embedded Systems, Legacy Design Maintenance and Resourcing.
Automotive Powertrain Boot Code Storage
In automotive powertrain, chassis, and body ECUs, the M58BW16FB4ZA3F stores boot firmware and calibration-resident code that the MCU executes directly at reset. Its 45 ns access time combined with synchronous burst read allows powertrain-class MCUs such as MPC55xx/MPC5xxx to fetch instructions without wait states, which is essential for meeting timing at first instruction. The 125C automotive temperature grade and lead-free '3F' suffix match under-hood and near-engine environmental requirements. Placed on the external bus with 0.1 uF decoupling at each supply ball pair and series termination on burst clock lines, the device provides reliable execute-in-place code storage; the trade-off versus copying code to RAM is slightly lower average throughput, which most boot-phase code easily tolerates.
推薦
Industrial PLC and Motor Control Boot ROM
Industrial programmable logic controllers, motor drives, and inverters need non-volatile code storage that survives power cycling and supports field firmware updates block by block. The M58BW16FB4ZA3F provides 16 Mbit of boot block NOR with hardware sector protection, allowing a small protected boot loader block plus user-updatable application blocks. Its 3.3V single supply integrates cleanly with 3.3V logic, and the 45 ns burst read accelerates initialization code execution. The 80-LBGA package saves board area versus TSOP-56 parallel NOR in compact drive enclosures. Designers should sequence erase/program operations through the command interface and poll status, and must observe block protection bits to prevent accidental corruption of the boot sector during in-field updates.
推薦
Telecom and Networking Line Cards
Telecom line cards and network interface boards historically used parallel burst NOR for board firmware, FPGA configuration images, and monitor code. The M58BW16FB4ZA3F's synchronous burst interface matches the zero-wait-state boot requirements of PowerPC-class and MIPS-class networking CPUs, and its boot block layout lets one protected block hold the boot monitor while application and FPGA bitstream images occupy main blocks. The 3.3V rail is standard on telecom backplane cards, and the low-profile 10 x 12 mm 80-LBGA fits under card guides where taller TSOP packages do not. For long-lifetime telecom designs, the automotive-grade temperature rating adds margin over commercial-grade memory, improving reliability in ventilated shelves with elevated ambient temperatures.
推薦
Test and Measurement Instrument Firmware
Bench instruments such as oscilloscopes, spectrum analyzers, and data acquisition mainframes use parallel NOR to hold start-up diagnostics, FPGA configuration, and application firmware. The M58BW16FB4ZA3F suits this role because 45 ns burst reads keep the boot sequence fast, hardware block protection secures the diagnostic block against failed updates, and the x32 organization maximizes bus utilization on 32-bit processors common in instrument mainframes. The 125C-grade device also tolerates the warm internal environment of fan-cooled instruments. Engineers should verify burst-mode timing against the CPU bus specification and add pull resistors on burst control signals so the device defaults to asynchronous mode during boundary scan or low-speed boot sequences.
推薦
Aerospace and Rugged Embedded Systems
Ruggedized and aerospace-adjacent embedded controllers favor parallel NOR with wide temperature margins because environmental derating consumes commercial-grade headroom. The M58BW16FB4ZA3F's operation to 125C and its BGA package with enhanced solder-joint reliability versus peripheral-lead packages make it a candidate for avionics auxiliary controllers, UAV flight-control boot storage, and rugged data-logger code memory. The 45 ns burst interface supports the DSPs and PowerPC processors common in these systems, and execute-in-place operation avoids the boot-time and RAM cost of code shadowing. Designers must validate vibration performance of the BGA solder joints in their conformal-coating process and confirm block protection configuration against the system's update policy.
推薦
Legacy Design Maintenance and Resourcing
Many products designed in the 2000s with ST M58BW-series burst NOR are still in production or service, and their original memory may face availability gaps. The M58BW16FB4ZA3F page consolidates sourcing from LCSC (in stock from $4.55 as of 2026-09-05) and DigiKey so buyers can keep legacy lines running without PCB redesign. Because the M58BW16 family shares the 80-LBGA footprint and command set across speed, temperature, and density grades, a same-family substitute (for example the 32 Mbit M58BW32FB4ZA3F) can extend capacity on the identical land pattern when 16 Mbit stock runs out. Always verify speed-grade compatibility with the host bus timing before substitution.
推薦
推薦產品摘要
工程參考資料，適用於 M58BW16FB4ZA3F — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | M58BW16FB4ZA3E | M58BW32FB4ZA3F | M58BW16FB4ZA6F |
|---|---|---|---|---|
| Package | 80-LBGA (10x12 mm) | 80-LBGA (10x12 mm) - same | 80-LBGA (10x12 mm) - same | 80-LBGA (10x12 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 16 Mbit | 16 Mbit | 32 Mbit | 16 Mbit |
| Organization | 1M x16 / 512K x32 | 1M x16 / 512K x32 | 2M x16 / 1M x32 | 1M x16 / 512K x32 |
| Access Time | 45 ns | 45 ns (grade-dependent) | 45 ns | Faster grade (60/70 ns family options) |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Operating Temperature | -40C to +125C (automotive) | Different grade (E suffix) | -40C to +125C (automotive) | -40C to +125C (automotive) |
| Interface | Parallel burst + asynchronous | Parallel burst + asynchronous | Parallel burst + asynchronous | Parallel burst + asynchronous |
主要差異化特點
- Double the code capacity on the identical footprint (對比M58BW32FB4ZA3F)
- Automotive temperature grade with lead-free suffix (對比M58BW16FB4ZA3E)
- Synchronous burst read for zero-wait-state code fetch (對比M29W640GT70N3F)
設計說明
Provide one 0.1 uF ceramic decoupling capacitor for each supply ball pair, placed within 2 mm of the ball, plus at least one 4.7 uF bulk capacitor per device on the 3.3V rail. The 80-LBGA footprint requires solder-mask-defined or non-solder-mask-defined pads per the datasheet land-pattern drawing; do not substitute a generic BGA-80 footprint. Vias to internal planes must not be placed in-pad unless filled and plated, and the burst clock ball should be routed with controlled impedance and series termination near the driving CPU.
Respect block protection and program/erase command sequences exactly as specified in the manufacturer datasheet; a wrong command sequence can leave the device in a protected or status-polling state that looks like a read failure. Verify speed grade against host bus timing: burst access at the CPU's maximum clock requires the 45 ns grade, and slower grades (E/6F options) reduce maximum burst frequency. When substituting same-family parts, confirm the temperature/speed suffix because parametric compatibility, not just the package, defines a valid drop-in.
Estimated: with a 3.3V supply and typical read currents in the tens of milliamps class for this family, active power is on the order of 100 mW; verify the exact ICC values from the manufacturer datasheet before sizing the rail. Ensure the 3.3V rail ramps monotonically and completes power-on reset before the CPU releases the memory bus, otherwise spurious writes are possible. Add a supervisor with adequate reset timeout so the memory is never accessed during brownout.
At 45 ns access and burst clock rates, address and data lines of a few tens of centimeters behave as transmission lines. Route the external bus with matched lengths within the CPU's skew budget, maintain at least 3W spacing between the burst clock and adjacent signals, and use pull-up/pull-down straps on configuration and burst-mode control pins so the memory defaults to a defined state during reset and JTAG boundary scan.
合規資訊
The 'F' suffix denotes the lead-free/RoHS-compliant package option per family naming conventions and distributor listings. Automotive temperature grade per Vyrian/Partstack listings. REACH, halogen-free, and conflict-minerals status not stated in provided data.
