MMG3007NT1 - 6 GHz, 19 dB Gain InGaP HBT GPA | NXP
MPN： MMG3007NT1 ✓ 啟用中MMG3007NT1 概覽
A general-purpose amplifier (GPA) is a broadband RF amplifier IC designed to provide moderate gain, flat frequency response, and acceptable linearity across a wide RF spectrum, typically used as a driver or buffer stage in transmit or receive chains. As an RF amplifier IC, the MMG3007NT1 sits within the broader hierarchy of RF front-end components, including power amplifiers (PA), low-noise amplifiers (LNA), and driver amplifiers, all part of the wider category of radio-frequency integrated circuits (RFIC) and microwave semiconductor devices.
The MMG3007NT1 is fabricated in InGaP HBT technology, which delivers superior thermal stability, ruggedness, and reliability compared to GaAs MESFET alternatives. Key features include internally matched 50-ohm RF ports, single 5 V supply operation, 19 dB small-signal gain at 900 MHz, 16 dBm P1dB output power at 900 MHz, and a third-order output intercept point (OIP3) of 30 dBm at 900 MHz. The 4-pin SOT-89 plastic package provides low thermal resistance suitable for continuous-wave Class A operation.
This MMG-series amplifier is internally input and output matched to 50 ohms and is designed for a broad range of Class A, small-signal, high-linearity, general-purpose applications. Because the matching networks are absorbed into the die and package, PCB designers can route the amplifier as a two-port block, simplifying board layout and reducing bill-of-materials cost relative to discrete transistor solutions that require external matching.
Typical applications include driver stages for cellular, PCS, PHS, and WLL base-station transmitters, IF and RF buffer amplifiers in test equipment, broadband gain blocks in CATV and instrumentation, and general-purpose RF amplification from DC to 6 GHz.
When designing with the MMG3007NT1, ensure a clean 5 V supply with adequate RF bypassing (typically 100 pF and 0.1 µF in parallel) at the supply pin to prevent gain ripple and instability. The exposed pad of the SOT-89 package must be soldered to a ground plane for proper thermal dissipation and RF performance.
This page consolidates distributor stock, current pricing, drop-in alternatives, and practical design notes that extend beyond the NXP datasheet to assist in part selection and PCB implementation.
直接替換替代品，適用於 MMG3007NT1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MMG3007NT1 （相同外形與佔位） — 差異在於 Frequency Range, Operating Class, Package, Part Description, Small-Signal Gain.
MMG3010NT1
✅ 直接替換📋 參考替代品（不在目錄中）
MMG3008NT1
✅ 直接替換📋 參考替代品（不在目錄中）
MMG3011NT1
✅ 直接替換聯絡詢價
查看資料表 →MMH3111NT1
✅ 直接替換聯絡詢價
查看資料表 →MMG3007NT1 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT |
| Frequency Range | 0 Hz to 6000 MHz (DC to 6 GHz) |
| Small-Signal Gain | 19 dB @ 900 MHz (typical) |
| P1dB Output Power | 16 dBm @ 900 MHz |
| Third-Order Output Intercept Point (OIP3) | 30 dBm @ 900 MHz |
| 供應電壓 | 5 V (typical, single supply) |
| 封裝 | SOT-89-4 (4-pin, plastic, surface mount) |
| Technology | InGaP Heterojunction Bipolar Transistor (HBT) |
| Input Matching | Internally matched to 50 ohms |
| Output Matching | Internally matched to 50 ohms |
| Operating Class | Class A, small-signal, general purpose |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant (per NXP product page) |
| Tape and Reel Quantity | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) |
MMG3007NT1 腳位配置
| 腳位 1 | RF IN — RF input, internally matched to 50 ohms |
| 腳位 2 | GND — Ground |
| 腳位 3 | RF OUT / VCC — RF output (DC supply fed through bias network) |
| 腳位 4 | GND (Exposed Pad) — Thermal and RF ground pad - must be soldered to PCB ground plane |
典型應用
MMG3007NT1 適用於 6 應用s: Cellular / PCS / WLL Base-Station Driver, Broadband IF / RF Buffer Amplifier, CATV Distribution Amplifier Gain Block, Software-Defined Radio LO Driver, Test & Measurement Instrumentation Gain Stage, General-Purpose 50-Ohm RF Gain Block.
Cellular / PCS / WLL Base-Station Driver
The MMG3007NT1's 19 dB small-signal gain and 16 dBm P1dB at 900 MHz make it a strong fit as a driver stage for cellular, PCS, and WLL base-station transmitters operating below 6 GHz. Its 30 dBm OIP3 provides the linearity margin required for multi-carrier GSM/UMTS/LTE signals, while the internally matched 50-ohm RF ports simplify PCB layout at the front-end module interface. Placed between the transceiver output and the final power amplifier, it provides ~14 dB of usable linear back-off before compression. Unlike GaAs MESFET competitors the InGaP HBT process is more rugged under load-mismatch conditions, improving field reliability in remote radio heads.
推薦
Broadband IF / RF Buffer Amplifier
The MMG3007NT1's DC-to-6 GHz bandwidth with internal 50-ohm matching allows it to serve as a broadband IF or RF buffer in test-and-measurement equipment and instrumentation. Flat gain up to several GHz simplifies the design of broadband test signal chains, and the 5 V single-supply operation keeps the bias tree minimal. Used as a 50-ohm gain block between a mixer and a data-converter, the MMG3007NT1 preserves the dynamic range of the downstream ADC/DAC. Compared to discrete transistor buffer designs, the integrated matching eliminates manual RF tuning during production.
推薦
CATV Distribution Amplifier Gain Block
The MMG3007NT1's flat gain, low distortion, and 50-ohm matched I/O make it a useful drop-in gain block for CATV distribution and headend equipment operating from 50 MHz to 1 GHz. The 19 dB gain at 900 MHz gives designers a single-stage solution for many distribution paths, and the InGaP HBT process provides the linearity needed to pass composite-triple-beat and composite-second-beat tests typical of CATV spec. Each SOT-89-4 part occupies only a few square millimeters of PCB area, allowing compact splitters and tap modules. The internal matching also reduces BOM cost versus discrete CATV gain-block designs.
推薦
Software-Defined Radio LO Driver
The MMG3007NT1's 6 GHz upper frequency limit covers the local-oscillator (LO) drive band of most software-defined radios operating up through 5.8 GHz WLAN and Wi-Fi bands. Delivering 16 dBm P1dB, it can drive mixers, IQ modulators, and frequency synthesizers with adequate headroom for clean LO injection. Single 5 V supply operation aligns with the typical SDR platform rail, simplifying power-tree design. The exposed-pad SOT-89-4 package lands directly on the RF ground plane, preserving LO signal integrity and minimizing unwanted LO leakage into adjacent bands.
推薦
Test & Measurement Instrumentation Gain Stage
The MMG3007NT1 is well suited as a 50-ohm gain stage in bench instruments such as spectrum-analyzer pre-amplifiers, signal-generator output buffers, and network-analyzer reference paths. With 19 dB small-signal gain and DC-to-6 GHz coverage, it provides a wideband gain block that simplifies front-end design. The InGaP HBT process delivers repeatable gain and phase across production lots, important for metrology applications. Its low distortion preserves measurement accuracy at moderate signal levels, while the internal 50-ohm matching eliminates calibration of external matching networks.
推薦
General-Purpose 50-Ohm RF Gain Block
Beyond the named use cases, the MMG3007NT1 functions as a generic DC-to-6 GHz 50-ohm gain block for prototype RF boards, educational lab kits, and hobby projects. Internally matched input and output allow the part to be dropped into a signal chain with only DC-bypass capacitors and a 5 V supply. This makes the device a popular choice for university RF labs and rapid-prototype environments where designers need a known-good broadband gain stage. The SOT-89-4 footprint is breadboard-friendly and reflow-compatible, and the wide operating band lets one part serve many lab experiments.
推薦
推薦產品摘要
工程參考資料，適用於 MMG3007NT1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MMG3010NT1 | MMG3008NT1 | MMG3011NT1 | MMH3111NT1 |
|---|---|---|---|---|---|
| Package | SOT-89-4 | SOT-89-4 - same | SOT-89-4 - same | SOT-89-4 - same | SOT-89-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 0 to 6000 MHz | 0 to 6000 MHz | 0 to 6000 MHz | 0 to 6000 MHz | 0 to 6000 MHz (similar) |
| Supply Voltage | 5 V single supply | 5 V single supply | 5 V single supply | 5 V single supply | 5 V single supply |
| Internal 50-Ohm Matching | Yes (input and output) | Yes (input and output) | Yes (input and output) | Yes (input and output) | Yes (input and output) |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Internally matched to 50 ohms at both ports (對比MMG3011NT1)
- 19 dB gain with 30 dBm OIP3 linearity at 900 MHz (對比MMG3008NT1)
- Wide DC to 6 GHz operating band (對比MMH3111NT1)
設計說明
The SOT-89-4 exposed thermal pad must be soldered to a continuous PCB ground plane to keep the junction temperature within safe limits under Class A continuous-wave operation. Estimated: with 5 V supply and 16 dBm P1dB (~40 mW) output plus bias current (typically 50-80 mA), total dissipation is on the order of 250-400 mW; without the exposed pad soldered the SOT-89 theta-JA rises dramatically and the die can overheat. Use multiple thermal vias under the exposed pad to a second-layer ground pour to reduce junction-to-ambient resistance.
Route the RF input and output traces as 50-ohm controlled-impedance microstrip or coplanar waveguide directly into the device pins. Place the 100 pF and 0.1 µF DC-bypass capacitors as close as possible to the bias pin to prevent low-frequency gain peaking and oscillation. Keep the ground return path under the device continuous; any slot in the ground plane beneath the SOT-89-4 will degrade the internal matching network and reduce effective gain at the upper frequency band.
When used as a broadband gain block in measurement or LO chains, isolate the input and output with attenuator pads (typically 3-6 dB) if there is any risk of the load or source presenting a non-50-ohm reflection. The MMG3007NT1 can become unstable with reflective loads outside its intended 50-ohm matching. For highest linearity in multi-tone applications, back off the input power by at least 10 dB below P1dB so the device operates in its most linear region.
Do not apply DC supply voltage without RF-bypass capacitors on the bias pin - this will cause parasitic oscillation. Do not exceed the absolute maximum ratings for RF input power or supply voltage; consult the manufacturer datasheet for the latest values. Do not solder the device by hand without a temperature-controlled iron - hand-soldering can overheat the plastic SOT-89-4 package and damage the InGaP HBT die.
合規資訊
RoHS and REACH compliance per NXP product page. AEC-Q100 not applicable for RF amplifier ICs intended for infrastructure and base-station use; refer to automotive-grade NXP RF amplifiers if required.
