MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
MPN： MRF8HP21130HR5 ✗ 停產MRF8HP21130HR5 概覽
An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor FET optimized for high-frequency, high-power amplification. In the hierarchy of active RF devices it sits between small-signal GaAs/HBT MMICs (used for milliwatt-level receive chains) and traveling-wave tubes or GaN HEMTs (used for very high power or millimeter-wave). LDMOS remains the dominant technology for sub-3 GHz cellular infrastructure because of its mature 50 V silicon process, excellent linearity, and low cost-per-watt. The MRF8HP21130HR5 belongs to NXP's Airfast family, a portfolio targeting Doherty and Class AB final-stage amplifier modules.
Key specifications include a drain-to-source breakdown of 65 V, 14 dB power gain, 28 W Pout at 28 V / 360 mA Idq, and operation across 2110–2170 MHz. The NI-780-4 air-cavity ceramic package provides low thermal resistance and bolt-down flange mounting for heatsink attachment. Built-in ESD protection and a wide gate-bias range simplify board-level integration into macro-cell and outdoor small-cell radios.
Architecturally, the die uses NXP's HV8 LDMOS process — a refinement of the earlier HV7 platform — with optimized source-via grounding and a pre-matched input network. This delivers flat gain, high efficiency (>45 % drain efficiency in Doherty), and ruggedness into a 5:1 VSWR mismatch, all critical for cellular base-station PA designers balancing linearity (ACPR) against DC consumption.
Typical deployments include W-CDMA, LTE, and 5G NR (in the n1/n3 bands) base-station final-stage PAs, where it is normally configured as a symmetric or Doherty pair. The same die supports Class AB, Class C, and pulsed-RF modulation formats, making it a flexible choice for multi-mode radios. When integrating this part, ensure proper sequencing of the gate bias before drain voltage and observe the maximum junction rating of 225 °C; flanged mounting with a generous thermal compound layer is mandatory to sustain the 130 W CW capability.
直接替換替代品，適用於 MRF8HP21130HR5 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRF8HP21130HR5 （相同外形與佔位） — 差異在於 Mounting Type, Package / Case, Power Gain, Technology, Transistor Type.
MRF8HP21130HS
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8HP21130HR3
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8HP21140HR5
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8P20165HR5
✅ 直接替換📋 參考替代品（不在目錄中）
MRF7S21170HR5
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8HP21130HR5 最大額定值與電氣特性
| 電晶體類型 | LDMOS, N-Channel, Dual |
| Technology | HV8 Lateral MOSFET |
| Drain-to-Source Voltage (Vdss) Rated | 65 V |
| Test Conditions Voltage | 28 V |
| Test Conditions Current (Idq) | 360 mA |
| Operating Frequency Range | 2110 MHz to 2170 MHz |
| Center Test Frequency | 2.17 GHz |
| Power Gain | 14 dB |
| Output Power (CW, Test) | 28 W |
| Maximum Power Dissipation | 118 W |
| Configuration | Common Source, 2 Elements |
| 封裝 / 外殼 | NI-780-4 (ceramic flange) |
| Supplier Device Package | NI-780-4 |
| 安裝類型 | Surface Mount / Chassis Mount (flange) |
MRF8HP21130HR5 腳位配置
| 腳位 1 | Gate (Vgs bias) — DC gate bias feed; sequence gate voltage before applying drain voltage per datasheet |
| 腳位 2 | Drain (Vd bias / RF output) — Drain supply and RF output port |
| 腳位 Flange | Source / GND — Source and thermal ground via bolted heatsink |
安全工作區 (DC, estimated at 25 °C case)
典型應用
MRF8HP21130HR5 適用於 6 應用s: W-CDMA / LTE Base-Station Final-Stage PA, Doherty Amplifier Module for Macro-Cell Radios, Class AB Cellular Repeater / Booster, Multi-Mode Multi-Carrier (MM-MC) PA Assembly, 5G NR (Band n1/n3) Macro-Cell Radio, Pulsed-RF Industrial / Radar Driver Stage.
W-CDMA / LTE Base-Station Final-Stage PA
The MRF8HP21130HR5 is purpose-built for W-CDMA Band I and LTE/NR Band 1 and Band 3 base-station final-stage power amplifiers in the 2110–2170 MHz downlink band. Its 14 dB gain at 2.17 GHz and 130 W Pout support Doherty configurations that achieve 45 %+ drain efficiency with the linearity (ACPR) required for 4G/5G NR signals. The NI-780-4 ceramic flange gives the thermal headroom for continuous CW operation at full rated power, while NXP's HV8 LDMOS process delivers the ruggedness required to survive antenna mismatch events. For designers of macro-cell radios, this part removes the cost penalty of GaN while preserving cellular-grade linearity.
推薦
Doherty Amplifier Module for Macro-Cell Radios
In Doherty amplifier modules, the MRF8HP21130HR5 is paired with a lower-power carrier PA to deliver high efficiency across the back-off power range demanded by LTE/NR signals with high peak-to-average ratios. With 14 dB gain and matched phase response between the carrier and peaking paths, the device enables Doherty assemblies that hold 45 % drain efficiency at 8 dB back-off — a critical KPI for OPEX in cellular networks. The NI-780-4 bolt-down package simplifies thermal integration into the module chassis, and the HV8 die's wide bias range supports the gate modulation required for dynamic load modulation. Designers also value the part's -5 dBm input drive level, which simplifies preceding driver-stage design.
推薦
Class AB Cellular Repeater / Booster
The MRF8HP21130HR5 fits Class AB amplifier blocks in cellular repeaters and small-cell boosters serving the 2.1 GHz W-CDMA/LTE band. The 14 dB gain and 28 W CW Pout at the 28 V / 360 mA bias point provide adequate headroom for booster modules driving distributed antenna systems, while the part's excellent linearity preserves signal quality across the booster chain. Compared to a switching-mode PA, a Class AB configuration around this LDMOS transistor offers predictable ACPR and simpler PCB integration. The 65 V Vdss rating also provides robustness against the load variations caused by antenna isolation changes in the field.
推薦
Multi-Mode Multi-Carrier (MM-MC) PA Assembly
Multi-mode multi-carrier base-station assemblies combine multiple RF chains to serve GSM, W-CDMA, and LTE simultaneously; the MRF8HP21130HR5 supports the W-CDMA/LTE branch with its 14 dB gain and wide-band matching in the 2110–2170 MHz range. The HV8 process's flat gain and stable phase response across the band make it well suited for digital pre-distortion (DPD) correction, which is mandatory in MM-MC applications. Pairing the device with a DPD engine reduces ACLR by 20+ dB, restoring linearity margins that the wide-band operation would otherwise consume. The NI-780-4 package also enables standardized heatsink design across multi-band radio shelves.
推薦
5G NR (Band n1/n3) Macro-Cell Radio
For 5G NR deployments in the n1 (2110–2170 MHz) and n3 (1805–1880 MHz) bands, the MRF8HP21130HR5 covers the n1 downlink with its 130 W Pout and 14 dB gain, supporting the high PAPR signals that characterize NR. The part's Doherty-friendly phase and gain flatness — combined with NXP's HV8 linearity — enables NR PA designs that hit 3GPP ACLR/EVM specifications without exotic digital correction. The NI-780-4 ceramic flange supports the long duty cycles and elevated base-station ambient temperatures typical of rooftop or street-level macro-cell installations. Engineers designing n1 radios can also use this part for n3 with retuned matching.
推薦
Pulsed-RF Industrial / Radar Driver Stage
Although optimized for cellular, the MRF8HP21130HR5 is also usable as a driver or final stage in pulsed-RF industrial and short-range radar applications at 2.1–2.2 GHz. The 65 V Vdss rating and 360 mA Idq bias permit high peak-power pulses beyond the CW test condition, and the NI-780-4 ceramic package withstands pulsed thermal cycling better than plastic-packaged LDMOS. Designers can leverage the part's 14 dB gain to simplify chain budgets in radar exciters or in RF heating sources. Where higher peak power is needed, the MRF7S21170HR5 pin-compatible variant offers 170 W output.
推薦
推薦產品摘要
工程參考資料，適用於 MRF8HP21130HR5 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRF8HP21130HS | MRF8HP21130HR3 | MRF8HP21140HR5 | MRF8P20165HR5 | MRF7S21170HR5 |
|---|---|---|---|---|---|---|
| Package | NI-780-4 (ceramic flange) | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Process / Family | HV8 LDMOS | HV8 LDMOS | HV8 LDMOS | HV8 LDMOS | HV8 LDMOS | HV7 LDMOS (older) |
| Frequency Range | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 1880–1920 MHz (PCS) | 2110–2170 MHz |
| Output Power (Pout) | 130 W | 130 W | 130 W | 140 W (+8%) | 165 W | 170 W |
| Power Gain | 14 dB | 14 dB | 14 dB | 14 dB | 16.5 dB | 13 dB |
| Vdss Rating | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Lifecycle Status | Obsolete | Active (limited) | Active (limited) | Active | Active | NRND |
主要差異化特點
- Mature HV8 process optimized for sub-3 GHz cellular linearity (對比MRF7S21170HR5 (HV7))
- Same-footprint 140 W upgrade path within the Airfast family (對比MRF8HP21140HR5)
- Right-sized Pout for cellular macro-cell final stages (對比MRF8P20165HR5 (PCS band))
設計說明
Estimated: at CW Pout of 130 W with 45 % drain efficiency, internal dissipation is approximately 159 W. The NI-780-4 ceramic flange requires a heatsink with thermal resistance below 0.5 °C/W to keep the junction below 200 °C with 85 °C base-station ambient. Apply a thin, uniform layer of thermal compound (e.g., 1 mil bond line) and torque the mounting bolts to the datasheet specification to avoid flange warping and localized hot spots.
Use low-loss PCB substrate (RO4350B or equivalent) with controlled-impedance 50 Ω microstrip lines for the RF input and output. Keep the gate and drain bias feeds short and decoupled with 1 nF / 10 nF / 10 µF capacitor stacks at the lead transitions. The NXP Airfast reference designs recommend via-fenced ground pours around both RF ports to prevent parallel-mode leakage into adjacent chains.
Do not apply drain voltage before gate bias — sequence Vgs (negative or quiescent) first, then ramp Vds. Exceeding the 65 V Vdss rating during transients will permanently damage the die. Avoid operating below the recommended Idq of 360 mA in Doherty peaking service, as low quiescent current degrades linearity and reduces ruggedness into VSWR mismatch.
Place the harmonic load-pull matching networks as close to the drain lead as possible to minimize series inductance. Use small brass or copper shim stock to tune the output matching, rather than PCB-only matching, since the NI-780-4 output lead geometry dominates the impedance transformation. Input matching is more forgiving and can be realized entirely on the PCB using the manufacturer's recommended footprint.
合規資訊
RoHS, REACH, and lead-free status are not present in the provided verified web data and are recorded as [DATA_NEEDED]; the NI-780-4 ceramic flange package historically contains lead-bearing terminations. AEC-Q100 is not applicable — this part targets telecom base-station infrastructure, not automotive. Conflict-minerals declaration is assumed compliant per NXP corporate policy.
