MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
Référence : MRF8HP21130HR5 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88.5 | $885,00 |
| 100 | $79.2 | $7 920,00 |
| 500 | $71.4 | $35 700,00 |
| 1 000 | $65 | $65 000,00 |
MRF8HP21130HR5 Présentation
An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor FET optimized for high-frequency, high-power amplification. In the hierarchy of active RF devices it sits between small-signal GaAs/HBT MMICs (used for milliwatt-level receive chains) and traveling-wave tubes or GaN HEMTs (used for very high power or millimeter-wave). LDMOS remains the dominant technology for sub-3 GHz cellular infrastructure because of its mature 50 V silicon process, excellent linearity, and low cost-per-watt. The MRF8HP21130HR5 belongs to NXP's Airfast family, a portfolio targeting Doherty and Class AB final-stage amplifier modules.
Key specifications include a drain-to-source breakdown of 65 V, 14 dB power gain, 28 W Pout at 28 V / 360 mA Idq, and operation across 2110–2170 MHz. The NI-780-4 air-cavity ceramic package provides low thermal resistance and bolt-down flange mounting for heatsink attachment. Built-in ESD protection and a wide gate-bias range simplify board-level integration into macro-cell and outdoor small-cell radios.
Architecturally, the die uses NXP's HV8 LDMOS process — a refinement of the earlier HV7 platform — with optimized source-via grounding and a pre-matched input network. This delivers flat gain, high efficiency (>45 % drain efficiency in Doherty), and ruggedness into a 5:1 VSWR mismatch, all critical for cellular base-station PA designers balancing linearity (ACPR) against DC consumption.
Typical deployments include W-CDMA, LTE, and 5G NR (in the n1/n3 bands) base-station final-stage PAs, where it is normally configured as a symmetric or Doherty pair. The same die supports Class AB, Class C, and pulsed-RF modulation formats, making it a flexible choice for multi-mode radios. When integrating this part, ensure proper sequencing of the gate bias before drain voltage and observe the maximum junction rating of 225 °C; flanged mounting with a generous thermal compound layer is mandatory to sustain the 130 W CW capability.
Alternatives de remplacement direct pour MRF8HP21130HR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF8HP21130HR5 (même facteur de forme et même empreinte) — différant par Mounting Type, Package / Case, Power Gain, Technology, Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF8HP21130HS
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8HP21130HR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8HP21140HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8P20165HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF7S21170HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8HP21130HR5 Valeurs maximales et caractéristiques électriques
| Type de transistor | LDMOS, N-Channel, Dual |
| Technology | HV8 Lateral MOSFET |
| Drain-to-Source Voltage (Vdss) Rated | 65 V |
| Test Conditions Voltage | 28 V |
| Test Conditions Current (Idq) | 360 mA |
| Operating Frequency Range | 2110 MHz to 2170 MHz |
| Center Test Frequency | 2.17 GHz |
| Power Gain | 14 dB |
| Output Power (CW, Test) | 28 W |
| Maximum Power Dissipation | 118 W |
| Configuration | Common Source, 2 Elements |
| Boîtier / Format | NI-780-4 (ceramic flange) |
| Supplier Device Package | NI-780-4 |
| Type de montage | Surface Mount / Chassis Mount (flange) |
Configuration des broches de MRF8HP21130HR5
| Broche 1 | Gate (Vgs bias) — DC gate bias feed; sequence gate voltage before applying drain voltage per datasheet |
| Broche 2 | Drain (Vd bias / RF output) — Drain supply and RF output port |
| Broche Flange | Source / GND — Source and thermal ground via bolted heatsink |
Zone de fonctionnement sûr (DC, estimated at 25 °C case)
Applications typiques
MRF8HP21130HR5 convient pour 6 applications: W-CDMA / LTE Base-Station Final-Stage PA, Doherty Amplifier Module for Macro-Cell Radios, Class AB Cellular Repeater / Booster, Multi-Mode Multi-Carrier (MM-MC) PA Assembly, 5G NR (Band n1/n3) Macro-Cell Radio, Pulsed-RF Industrial / Radar Driver Stage.
W-CDMA / LTE Base-Station Final-Stage PA
The MRF8HP21130HR5 is purpose-built for W-CDMA Band I and LTE/NR Band 1 and Band 3 base-station final-stage power amplifiers in the 2110–2170 MHz downlink band. Its 14 dB gain at 2.17 GHz and 130 W Pout support Doherty configurations that achieve 45 %+ drain efficiency with the linearity (ACPR) required for 4G/5G NR signals. The NI-780-4 ceramic flange gives the thermal headroom for continuous CW operation at full rated power, while NXP's HV8 LDMOS process delivers the ruggedness required to survive antenna mismatch events. For designers of macro-cell radios, this part removes the cost penalty of GaN while preserving cellular-grade linearity.
Recommandé
Doherty Amplifier Module for Macro-Cell Radios
In Doherty amplifier modules, the MRF8HP21130HR5 is paired with a lower-power carrier PA to deliver high efficiency across the back-off power range demanded by LTE/NR signals with high peak-to-average ratios. With 14 dB gain and matched phase response between the carrier and peaking paths, the device enables Doherty assemblies that hold 45 % drain efficiency at 8 dB back-off — a critical KPI for OPEX in cellular networks. The NI-780-4 bolt-down package simplifies thermal integration into the module chassis, and the HV8 die's wide bias range supports the gate modulation required for dynamic load modulation. Designers also value the part's -5 dBm input drive level, which simplifies preceding driver-stage design.
Recommandé
Class AB Cellular Repeater / Booster
The MRF8HP21130HR5 fits Class AB amplifier blocks in cellular repeaters and small-cell boosters serving the 2.1 GHz W-CDMA/LTE band. The 14 dB gain and 28 W CW Pout at the 28 V / 360 mA bias point provide adequate headroom for booster modules driving distributed antenna systems, while the part's excellent linearity preserves signal quality across the booster chain. Compared to a switching-mode PA, a Class AB configuration around this LDMOS transistor offers predictable ACPR and simpler PCB integration. The 65 V Vdss rating also provides robustness against the load variations caused by antenna isolation changes in the field.
Recommandé
Multi-Mode Multi-Carrier (MM-MC) PA Assembly
Multi-mode multi-carrier base-station assemblies combine multiple RF chains to serve GSM, W-CDMA, and LTE simultaneously; the MRF8HP21130HR5 supports the W-CDMA/LTE branch with its 14 dB gain and wide-band matching in the 2110–2170 MHz range. The HV8 process's flat gain and stable phase response across the band make it well suited for digital pre-distortion (DPD) correction, which is mandatory in MM-MC applications. Pairing the device with a DPD engine reduces ACLR by 20+ dB, restoring linearity margins that the wide-band operation would otherwise consume. The NI-780-4 package also enables standardized heatsink design across multi-band radio shelves.
Recommandé
5G NR (Band n1/n3) Macro-Cell Radio
For 5G NR deployments in the n1 (2110–2170 MHz) and n3 (1805–1880 MHz) bands, the MRF8HP21130HR5 covers the n1 downlink with its 130 W Pout and 14 dB gain, supporting the high PAPR signals that characterize NR. The part's Doherty-friendly phase and gain flatness — combined with NXP's HV8 linearity — enables NR PA designs that hit 3GPP ACLR/EVM specifications without exotic digital correction. The NI-780-4 ceramic flange supports the long duty cycles and elevated base-station ambient temperatures typical of rooftop or street-level macro-cell installations. Engineers designing n1 radios can also use this part for n3 with retuned matching.
Recommandé
Pulsed-RF Industrial / Radar Driver Stage
Although optimized for cellular, the MRF8HP21130HR5 is also usable as a driver or final stage in pulsed-RF industrial and short-range radar applications at 2.1–2.2 GHz. The 65 V Vdss rating and 360 mA Idq bias permit high peak-power pulses beyond the CW test condition, and the NI-780-4 ceramic package withstands pulsed thermal cycling better than plastic-packaged LDMOS. Designers can leverage the part's 14 dB gain to simplify chain budgets in radar exciters or in RF heating sources. Where higher peak power is needed, the MRF7S21170HR5 pin-compatible variant offers 170 W output.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF8HP21130HR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF8HP21130HS | MRF8HP21130HR3 | MRF8HP21140HR5 | MRF8P20165HR5 | MRF7S21170HR5 |
|---|---|---|---|---|---|---|
| Package | NI-780-4 (ceramic flange) | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Process / Family | HV8 LDMOS | HV8 LDMOS | HV8 LDMOS | HV8 LDMOS | HV8 LDMOS | HV7 LDMOS (older) |
| Frequency Range | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 2110–2170 MHz | 1880–1920 MHz (PCS) | 2110–2170 MHz |
| Output Power (Pout) | 130 W | 130 W | 130 W | 140 W (+8%) | 165 W | 170 W |
| Power Gain | 14 dB | 14 dB | 14 dB | 14 dB | 16.5 dB | 13 dB |
| Vdss Rating | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Lifecycle Status | Obsolete | Active (limited) | Active (limited) | Active | Active | NRND |
Principaux différenciateurs
- Mature HV8 process optimized for sub-3 GHz cellular linearity (vs MRF7S21170HR5 (HV7))
- Same-footprint 140 W upgrade path within the Airfast family (vs MRF8HP21140HR5)
- Right-sized Pout for cellular macro-cell final stages (vs MRF8P20165HR5 (PCS band))
Notes de conception
Estimated: at CW Pout of 130 W with 45 % drain efficiency, internal dissipation is approximately 159 W. The NI-780-4 ceramic flange requires a heatsink with thermal resistance below 0.5 °C/W to keep the junction below 200 °C with 85 °C base-station ambient. Apply a thin, uniform layer of thermal compound (e.g., 1 mil bond line) and torque the mounting bolts to the datasheet specification to avoid flange warping and localized hot spots.
Use low-loss PCB substrate (RO4350B or equivalent) with controlled-impedance 50 Ω microstrip lines for the RF input and output. Keep the gate and drain bias feeds short and decoupled with 1 nF / 10 nF / 10 µF capacitor stacks at the lead transitions. The NXP Airfast reference designs recommend via-fenced ground pours around both RF ports to prevent parallel-mode leakage into adjacent chains.
Do not apply drain voltage before gate bias — sequence Vgs (negative or quiescent) first, then ramp Vds. Exceeding the 65 V Vdss rating during transients will permanently damage the die. Avoid operating below the recommended Idq of 360 mA in Doherty peaking service, as low quiescent current degrades linearity and reduces ruggedness into VSWR mismatch.
Place the harmonic load-pull matching networks as close to the drain lead as possible to minimize series inductance. Use small brass or copper shim stock to tune the output matching, rather than PCB-only matching, since the NI-780-4 output lead geometry dominates the impedance transformation. Input matching is more forgiving and can be realized entirely on the PCB using the manufacturer's recommended footprint.
Informations de conformité
RoHS, REACH, and lead-free status are not present in the provided verified web data and are recorded as [DATA_NEEDED]; the NI-780-4 ceramic flange package historically contains lead-bearing terminations. AEC-Q100 is not applicable — this part targets telecom base-station infrastructure, not automotive. Conflict-minerals declaration is assumed compliant per NXP corporate policy.
