MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP
MPN： MRFE6S9046NR1 ✓ 啟用中MRFE6S9046NR1 概覽
An RF power MOSFET in the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family is a specialized transistor optimized for high-frequency, high-power amplification. Unlike small-signal MOSFETs used for logic or analog signal processing, RF power LDMOS devices combine high breakdown voltage, high gain, and good thermal performance in a single ceramic package designed to be bolted to a heatsink. Within the broader taxonomy, an LDMOS is a power MOSFET, a discrete semiconductor, and ultimately an electronic component; it sits in the same engineering family as laterally-diffused RF devices from Ampleon, ST, and Infineon but is distinguished by its heritage as a Freescale/NXP part developed for cellular infrastructure.
Key features of the MRFE6S9046NR1 include 35.5 W CW output power at P1dB compression (typical), 19 dB small-signal gain at 960 MHz, 28 V nominal drain supply, integrated electrostatic discharge (ESD) protection, and a thermally-enhanced TO-270-4 ceramic/overmold package. The device uses a single-ended common-source configuration with a gate bias range suitable for class AB operation, and is rated for operation from a 28 V DC supply commonly found in cellular base-station power amplifiers. Its internal matching simplifies PCB integration in Doherty and push-pull topologies.
Typical applications include GSM/EDGE cellular base-station power amplifiers in the 900 MHz band, CDMA and multicarrier amplifier final stages, RF power boosters for industrial heating, and continuous-wave (CW) ISM-band transmitters in the 920-960 MHz range. Designers select this part when the application requires high gain and ruggedness at moderate CW power levels.
When designing with this device, ensure the drain supply is well-bypassed with low-ESR capacitors close to the package leads, and that the heatsink compound and mounting torque follow the manufacturer recommendations. Gate bias sequencing should be applied before drain voltage to prevent uncontrolled current surges.
直接替換替代品，適用於 MRFE6S9046NR1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRFE6S9046NR1 （相同外形與佔位） — 差異在於 Mounting Type, Package / Case, Part Number, RoHS Status, Transistor Type.
MRFE6S9046GNR1
✅ 直接替換聯絡詢價
查看資料表 →MRFE6S9045NR1
✅ 直接替換📋 參考替代品（不在目錄中）
MRFE6S9060NR1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MRFE6S9046NR1 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9046NR1 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral |
| Frequency Range | 920 MHz to 960 MHz |
| Output Power (CW) | 35.5 W typical at 960 MHz, 28 V |
| Power Gain | 19 dB typical at 960 MHz |
| Drain-Source Voltage (Vds max) | 66 V rated |
| Operating Drain Voltage | 28 V nominal |
| Test Current (Quiescent) | 300 mA |
| 封裝 / 外殼 | TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic |
| 腳位數 | 5 (Drain, Gate, Source x2, NC) |
| 安裝類型 | Surface Mount / Flange Mount |
| Application | GSM / GSM EDGE base station, CDMA, multicarrier amplifier |
| RoHS 狀態 | Compliant (per DigiKey listing) |
| Lead-Free Status | Lead Free (per distributor data) |
MRFE6S9046NR1 to-270 wb-4 (case 1486-03, style 1), plastic over-molded ceramic 腳位配置指南
MRFE6S9046NR1（to-270 wb-4 (case 1486-03, style 1), plastic over-molded ceramic 封裝）的腳位配置。 此功率元件具有閘極、汲極與源極端子。對於非極性封裝，請參閱製造商資料表以取得確切的第 1 腳方向與佈局詳細資訊。常見應用包括電源設計、馬達驅動與負載切換。
無詳細腳位定義資料： MRFE6S9046NR1.
請參閱 資料表 以查看完整腳位配置。
安全工作區 (DC)
典型應用
MRFE6S9046NR1 適用於 6 應用s: GSM 900 Base Station Power Amplifier, GSM EDGE Linear Amplifier, CDMA and Multicarrier Power Amplifier, Industrial RF Heating Transmitter, Repeater and Booster Amplifier, Military / Tactical Radio Amplifier.
GSM 900 Base Station Power Amplifier
The MRFE6S9046NR1 is a natural fit for the final stage of GSM 900 macro-cell base-station power amplifiers, where 35.5 W CW output at 925-960 MHz and 19 dB of gain simplify the gain-chain budget. Its 28 V drain operation matches the standard -48 V-to-28 V telecom supply rail, and the LDMOS architecture provides the ruggedness needed to survive antenna load-mismatch transients. The device is biased in class AB at 300 mA quiescent current to balance linearity and DC efficiency for GMSK modulation, and the TO-270 WB-4 ceramic package mounts directly to a heatsink for continuous-duty operation. Designers typically place the part behind a ceramic balun and a printed-circuit Doherty combiner to scale output power further when needed.
推薦
GSM EDGE Linear Amplifier
GSM EDGE uses 8-PSK linear modulation requiring higher linearity than GMSK, and the MRFE6S9046NR1 supports this use case at 920-960 MHz with proper linearization. The NXP datasheet lists EDGE as a primary target application. The part delivers 35.5 W CW at 19 dB gain when linearized with digital predistortion (DPD), and its 28 V operation preserves headroom for the back-off required by 8-PSK peaks. The TO-270 WB-4 package's thermal mass and ceramic isolation also help stabilize bias drift during the high peak-to-average ratios encountered in EDGE bursts.
推薦
CDMA and Multicarrier Power Amplifier
The MRFE6S9046NR1 is suitable for CDMA and multicarrier amplifier final stages in cellular infrastructure, where multiple RF carriers are combined before reaching the antenna. The NXP datasheet explicitly calls out CDMA and multicarrier applications alongside GSM. At 35.5 W CW and 19 dB gain with 28 V supply, the part provides adequate headroom for multi-carrier composite power while keeping intermodulation products manageable. Designers use it after a multicarrier combiner network or as the final stage in a feedforward linearization loop.
推薦
Industrial RF Heating Transmitter
The 920-960 MHz industrial-scientific-medical (ISM) band overlaps with the MRFE6S9046NR1's specified range, making the part useful for continuous-wave RF heating and drying equipment. Its 35.5 W CW capability at 28 V supports plastic-welding, food-processing, and paper-drying applications where moderate power is needed without the complexity of higher-power tubes. The LDMOS architecture offers long operating life and predictable gain, which simplifies the closed-loop power control common in industrial RF generators. The TO-270 WB-4 package's flange-mount thermal pad is well suited to the heavy heatsinking required for long RF-on duty cycles.
推薦
Repeater and Booster Amplifier
The MRFE6S9046NR1 can serve as the final stage in 900 MHz cellular repeaters and signal boosters that extend coverage in buildings, tunnels, or rural areas. Its 19 dB gain and 35.5 W CW output allow a single device to drive a sector antenna with adequate EIRP for indoor coverage extension. The TO-270 WB-4 ceramic package tolerates the elevated ambient temperatures found in equipment closets, and its bolt-down mechanical format simplifies field-serviceable hardware. Biasing flexibility around 300 mA quiescent allows trade-offs between linearity and efficiency depending on the booster's modulation mix.
推薦
Military / Tactical Radio Amplifier
The 920-960 MHz band is used by certain tactical radio systems, and the MRFE6S9046NR1's rugged LDMOS construction makes it a candidate for vehicular and manpack amplifier finals where size, weight, and reliability are critical. With 35.5 W CW and 19 dB gain, a single stage can deliver the power needed for short-range line-of-sight communications, and the ceramic TO-270 WB-4 package resists shock and vibration better than plastic-molded alternatives. Operation from 28 V matches standard military vehicle bus voltages, eliminating the need for additional conversion stages.
推薦
推薦產品摘要
工程參考資料，適用於 MRFE6S9046NR1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRFE6S9046GNR1 | MRFE6S9045NR1 | MRFE6S9060NR1 |
|---|---|---|---|---|
| Package | TO-270 WB-4 (CASE 1486-03) | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW) | 35.5 W | 35.5 W | ~30 W (lower-power variant) | ~60 W (higher-power variant) |
| Power Gain | 19 dB at 960 MHz | 19 dB | 19 dB | ~18 dB |
| Operating Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Maximum Vds | 66 V | 66 V | 66 V | 66 V |
| Frequency Range | 920-960 MHz | 920-960 MHz | 920-960 MHz | 920-960 MHz |
| Reel Orientation | R1 | GNR1 (opposite orientation) | R1 | R1 |
主要差異化特點
- Reel orientation match for dual-sided assembly lines (對比MRFE6S9046GNR1)
- Higher output power than MRFE6S9045NR1 family member (對比MRFE6S9045NR1)
- Established NXP/Freescale LDMOS reliability in telecom infrastructure (對比MRFE6S9060NR1)
設計說明
The TO-270 WB-4 package is a flange-mount ceramic/overmold device that dissipates heat through its back-side metal pad. Estimated: at 35.5 W RF output with ~13 W DC input (28 V, ~470 mA average), roughly 10 W is dissipated as heat at full CW. A heatsink with thermal resistance below 1.0 C/W is recommended to keep the junction below 150 C at 85 C ambient. Apply thermal compound evenly and torque the mounting screws to the manufacturer-specified value to avoid uneven contact resistance.
Use a PCB footprint that matches the CASE 1486-03 outline and provides a windowed cutout so the package flange sits flush on the heatsink rather than on the PCB. Keep the gate and drain traces as 50-ohm microstrip or stripline; gate impedance is high and sensitive to stray capacitance, so route the gate bias network orthogonal to the RF path and decouple it with a 1 nF ceramic plus 10 uF electrolytic right at the gate pin. Source leads are typically grounded through the package flange rather than PCB vias.
Do not exceed 66 V on the drain, including transient overshoot from load-mismatch. Always sequence gate bias on before applying drain voltage to prevent uncontrolled current surges that can destroy the die. Ensure the input and output networks present a near-50-ohm load across 920-960 MHz; VSWR > 3:1 sustained can exceed the device's thermal SOA even at reduced drive. Finally, verify reel orientation (R1 vs GNR1) matches your pick-and-place tooling before bulk assembly.
合規資訊
RoHS compliance and lead-free status confirmed by DigiKey listing; REACH and halogen status not explicitly listed in the verified data.
