MW4IC2230NBR1 - 30W W-CDMA RF Power Amplifier, 1.6-2.4 GHz | NXP
MPN： MW4IC2230NBR1 ✗ 停產MW4IC2230NBR1 概覽
What is an integrated RF power amplifier? An integrated RF power amplifier (PA) is a multi-stage amplifier in which the input/output matching networks, bias circuits, and sometimes output harmonics filters are combined onto a single semiconductor die and packaged in a flange or over-molded carrier. RF PAs sit at the transmitter chain end, downstream of the modulator/upconverter and upstream of the antenna duplexer; they convert low-power modulated RF signals into high-power RF suitable for radiation. ICs like the MW4IC2230N family use LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) at high breakdown voltage (26-28 V) to deliver tens of watts of RF power while maintaining acceptable linearity for spectrally-efficient cellular standards.
Key features include a 31 dB typical gain at 2.14 GHz, P1dB compression near 30 W saturated output, high linearity suitable for 3GPP W-CDMA, EDGE, GSM, TDMA and CDMA modulations, integrated ESD protection, and internally matched 50 ohm input. The TO-272 WB-16 over-molded plastic package provides a low thermal-resistance flange for direct PCB or heatsink mounting, and the wideband on-chip design eliminates the need for band-specific matching boards.
The MW4IC2230NBR1 uses Freescale/NXP high-voltage (HV) LDMOS IC technology on a multi-stage topology. Two driver stages feed a final LDMOS FET output; integrated matching networks provide 50 ohm at the input while the output is matched for the 1.6-2.4 GHz cellular bands. The part is specified for 26-28 V drain supply operation, with bias generated by on-chip active bias that maintains quiescent current over temperature. The wideband response makes one part cover several cellular bands, reducing SKU count in multi-band BTS designs.
Typical applications include W-CDMA/3G cellular base-station driver and final PAs, EDGE multi-slot PA modules, TDMA and CDMA base-station transmitters, and driver amplifiers for higher-power outdoor units. The integrated matching and wideband response simplify OEM BTS radio designs and reduce tuneable-component count.
When designing in this part, observe the 28 V maximum drain supply and use a sequenced bias controller (such as NXP's MML Series or compatible) to prevent thermal runaway. Decouple the drain and gate supplies aggressively at the lead with ceramic and bulk capacitors to suppress envelope-frequency ripple that would otherwise degrade ACLR. The TO-272 flange must be soldered to a continuous copper pour or bolted to a heatsink to maintain junction temperature below 200 C at full output.
This page synthesizes distributor availability, NXP/Freescale datasheet parameters, and pin/package data not consolidated on Mouser or DigiKey product pages.
直接替換替代品，適用於 MW4IC2230NBR1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MW4IC2230NBR1 （相同外形與佔位） — 差異在於 Frequency Range, Mounting Type, Technology.
MW4IC2230GNBR1
✅ 直接替換📋 參考替代品（不在目錄中）
MW4IC2230NBR2
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MW4IC2230NBR1 最大額定值與電氣特性
| Technology | LDMOS (High Voltage, multi-stage integrated) |
| Frequency Range | 1.6 GHz to 2.4 GHz (usable); 2110-2170 MHz target band |
| Test Frequency | 2.14 GHz |
| Supply Voltage (Drain) | 26 V to 28 V |
| Supply Current (Quiescent) | 60 mA nominal |
| Small-Signal Gain | 31 dB typical |
| Modulation Support | W-CDMA, CDMA, EDGE, GSM, TDMA |
| Input Impedance | 50 ohm (internally matched) |
| 封裝 | TO-272 WB-16 (over-molded plastic, flange mount) |
| 安裝類型 | Surface / chassis mount via flange |
| Maximum Operating Temperature | 85 C |
| 腳位數 | 16 |
| Application | Cellular base-station RF power amplifier |
| Lead Configuration | Flat leads (TO-272-16 Variant) |
MW4IC2230NBR1 to-272 wb-16 (over-molded plastic, flange mount) 腳位配置指南
MW4IC2230NBR1（to-272 wb-16 (over-molded plastic, flange mount) 封裝）的腳位配置。 此類比元件具有輸入、輸出與電源腳位。偏移歸零、補償與致能腳位配置請參閱製造商資料表。適用於訊號調理與放大器電路。
無詳細腳位定義資料： MW4IC2230NBR1.
請參閱 資料表 以查看完整腳位配置。
典型應用
MW4IC2230NBR1 適用於 6 應用s: W-CDMA Base-Station Final Power Amplifier, Multi-Standard Cellular BTS PA, Driver Amplifier for Macro-Cell Higher-Power Stages, EDGE Multi-Slot Linear PA Module, CDMA2000 and TD-SCDMA Base-Station PA, Industrial / Test-and-Measurement RF Power Source.
W-CDMA Base-Station Final Power Amplifier
Why MW4IC2230NBR1 fits W-CDMA BTS final-PA service: the 30 W output rating and 31 dB small-signal gain at 2140 MHz directly support the 3GPP W-CDMA output requirement for micro/pico-cell base stations with 1-2 carriers. How it is used: the IC is mounted flange-down on a chassis-mount heatsink, fed from a baseband-to-RF upconverter via an external pre-driver pad, with drain supplied by a 28 V DC-DC converter behind a sequencer. Performance: at full output the part typically achieves 30% PAE and meets 3GPP ACLR at rated drive, replacing a discrete LDMOS chain with one flange-mount package.
推薦
Multi-Standard Cellular BTS PA
Why MW4IC2230NBR1 fits multi-standard BTS service: per the datasheet, the part covers 1.6-2.4 GHz with on-chip matching, supporting W-CDMA, CDMA, EDGE, GSM and TDMA modulations with one BOM. How it is used: the IC is biased in Class AB with envelope-tracking-capable drain modulation, so a single PA module can serve GSM, EDGE, and W-CDMA carriers with retune-free operation across the band. Performance: its wideband on-chip response eliminates band-specific matching boards, reducing SKU count and tune time for OEM BTS radio lines.
推薦
Driver Amplifier for Macro-Cell Higher-Power Stages
Why MW4IC2230NBR1 fits macro-cell driver service: the 30 W output comfortably drives external higher-power LDMOS or GaN final PUs (e.g. 60-100 W parts) in macro-cell BTS systems without compression. How it is used: it sits between the BTS exciter and the external final-stage flange, with an inter-stage attenuator pad and a circulator on the output to absorb reflected power into a dummy load. Performance: its 31 dB gain reduces required exciter drive by an order of magnitude, simplifying the upconverter lineup and improving system-level EVM at the antenna.
推薦
EDGE Multi-Slot Linear PA Module
Why MW4IC2230NBR1 fits EDGE multi-slot service: its LDMOS linearity at 26-28 V drain is adequate for 8-PSK EDGE modulation at moderate output, while the integrated matching network absorbs the wider EDGE modulation bandwidth. How it is used: biased in Class A with envelope tracking on the drain, the IC delivers EDGE-modulated RF at the BTS antenna port with low ACP. Performance: it lowers BOM cost versus discrete LDMOS chains by integrating input matching and bias networks, while providing a heatsink-mountable package for sealed outdoor BTS enclosures.
推薦
CDMA2000 and TD-SCDMA Base-Station PA
Why MW4IC2230NBR1 fits legacy 3G CDMA BTS PA service: the part's 1.6-2.4 GHz wideband response covers both the 1920-1980 MHz (uplink) and 2110-2170 MHz (downlink) regions used by CDMA2000 and TD-SCDMA. How it is used: with the same flange-mount assembly as a W-CDMA design, the part drives a single-carrier CDMA2000 1xEV-DO channel at full output with the factory-internal matching. Performance: maintenance spares and incremental-capacity deployments can reuse the same PA module across operators and standards, simplifying BTS inventory and field service.
推薦
Industrial / Test-and-Measurement RF Power Source
Why MW4IC2230NBR1 fits industrial RF test sources: its 30 W class output at 1.6-2.4 GHz provides calibrated RF power for EMC test cells, RF burn-in racks, and laboratory signal generators that emulate BTS carriers. How it is used: a 50 ohm fixture mounts the IC on a calibrated heatsink, with external coupler + detector providing closed-loop leveling for the test signal. Performance: the integrated matching simplifies test-fixture design versus a discrete PA chain, and the wideband response lets one fixture cover several cellular bands used in production test.
推薦
推薦產品摘要
工程參考資料，適用於 MW4IC2230NBR1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MW4IC2230GNBR1 | MW4IC2230NBR2 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 | TO-272 WB-16 (same) | TO-272 WB-16 (same) |
| Frequency Range | 1.6-2.4 GHz (2110-2170 MHz target) | 1.6-2.4 GHz (same) | 1.6-2.4 GHz (same) |
| Output Power | 30 W | 30 W | 30 W |
| Supply Voltage | 26-28 V | 26-28 V | 26-28 V |
| Small-Signal Gain | 31 dB | 31 dB | 31 dB |
| Quiescent Current | 60 mA | 60 mA | 60 mA |
| Pin Count | 16 | 16 | 16 |
| Mount Type | Flange / chassis mount | Flange / chassis mount | Flange / chassis mount |
主要差異化特點
- Integrated on-chip input matching reduces BOM cost and tune time (對比MW4IC2230GNBR1)
- Wideband 1.6-2.4 GHz on-chip response supports multiple cellular bands in one part (對比MW4IC2230NBR2)
- High-voltage LDMOS (26-28 V) on-chip integration (對比MW4IC2230GNBR1 / MW4IC2230NBR2)
設計說明
Estimated thermal analysis at 28 V, 30 W output, ~30% PAE: about 70 W DC input minus 30 W RF output equals ~40 W dissipated as heat. With a 50 C ambient target and 200 C max junction, system thermal resistance must be <= 3.75 C/W. Use a forced-air heatsink rated <= 1 C/W plus a 0.5 C/W thermal interface material (TIM) to stay within budget. The TO-272 flange must be flat and TIM-mounted with even pressure; cold-flow of TIM pads over time is a common failure mode in field BTS installations.
Use a sequenced bias controller (e.g. NXP's older MMG1521H-T9 or compatible discrete sequencer) to ramp gate supply before drain supply and to discharge gate supply before drain supply on shutdown. This prevents thermal runaway in the LDMOS final stage during transient bias transitions. Place a 10 uF X7R + 100 uF aluminum-polymer bulk capacitor directly at the drain pin to suppress envelope-frequency ripple that would otherwise degrade ACLR and EVM.
The TO-272 WB-16 flange is the RF ground and final-stage drain feed. Use 50 ohm coplanar-waveguide-with-ground (CPWG) on RO4350B or RO4003C for the input trace from the pre-driver, and a 50 ohm microstrip output trace with controlled-impedance vias for the final-stage output. Keep gate-bias traces short and shielded, since the multi-stage topology is sensitive to parasitic feedback that can cause oscillation at 1-2 GHz.
Common pitfalls include: (1) applying drain voltage before gate bias (thermal runaway); (2) operating above 28 V (LDMOS breakdown); (3) using insufficient heatsinking (junction exceeds 200 C rated maximum); (4) leaving the input open-circuited (oscillation); (5) laying out drain and gate traces in parallel for too long (coupled noise on the gate); (6) omitting an output circulator or isolator (load-mismatch damage at antenna). Add a reverse-power-detection circuit at the antenna port to protect the IC from VSWR events.
合規資訊
Released in 2007 before mandatory RoHS for ICs; some distributors list the part as RoHS but the specific lead finish (matte-tin vs tin-lead) and any exemption (e.g. RoHS 7(c)-III for high-temperature solder lead) must be confirmed against the NXP PCN or product page before use in RoHS-only assemblies. Not AEC-Q100 qualified - this is a base-station RF IC, not an automotive part.
