TDA21462AUMA1 - 60A OptiMOS Smart Power Stage 4.25-16V | Infineon
MPN： TDA21462AUMA1 ✓ 啟用中TDA21462AUMA1 概覽
A DrMOS (Driver + MOSFET integrated power stage) is a category of power management IC that monolithically co-packages a half-bridge gate driver with its high-side and low-side power MOSFETs into a single surface-mount module. This category sits within the broader power management hierarchy: DrMOS -> integrated power stage -> voltage regulator -> power management IC -> semiconductor. By collapsing the driver-to-MOSFET loop into one package, DrMOS parts minimize parasitic inductance, reduce switch-node ringing, and shrink PCB footprint versus discrete driver-plus-MOSFET implementations.
Key features of the TDA21462AUMA1 include cycle-by-cycle over-current protection with a programmable threshold, VCC and VDRV under-voltage lockout (UVLO), phase fault detection, IC temperature reporting, and thermal shutdown. The internal MOSFET current-sense algorithm with temperature compensation delivers accurate current telemetry versus inductor DCR-sense methods, enabling precise multi-phase current sharing. The exposed top-side thermal pad and source-down package orientation optimize PCB heat transfer and minimize switch-node ringing when Infineon layout guidelines are followed.
The TDA21462 utilizes a bootstrap high-side gate drive architecture fed by an internal charge pump, supporting 100% duty-cycle operation. Internal dead-time control and adaptive anti-shoot-through protection limit cross-conduction losses. The integrated Schottky diode across the low-side MOSFET reduces body-diode reverse-recovery losses during dead-time, improving light-load efficiency and reducing switch-node undershoot. Differential PWM inputs (PWM and /PWM) interface directly to multiphase PWM controllers from Infineon, Renesas, Monolithic Power, and ON Semiconductor.
Typical applications include 60 A single-phase or interleaved multi-phase buck VRM cores for network processors, ASICs, and FPGAs; telecom 12 V intermediate bus converters; industrial PoL rails; and high-current graphics and AI accelerator cards. The 39-pin PG-IQFN footprint simplifies layout and is pin-compatible with industry-standard 5 V/12 V DrMOS products.
When designing with this device, follow the manufacturer reference layout exactly: place input MLCC capacitors within 1 mm of the PVIN/PGND pins, keep the BOOT capacitor loop minimal, and flood the top-side exposed pad with thermal vias. The cycle-by-cycle OCP threshold must be programmed via the ILIM pin resistor before enabling PWM switching. Do not operate above 16 V PVIN or below 4.25 V PVIN; the device does not tolerate 20 V transients without external TVS clamping.
This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, application-specific design notes, and pinout diagrams drawn from the Infineon TDA21462 datasheet, providing engineering context not duplicated on the manufacturer's PDF.
直接替換替代品，適用於 TDA21462AUMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： TDA21462AUMA1 （相同外形與佔位） — 差異在於 Mounting Type, Package, Topology, Maximum Output Current, Operating Junction Temperature.
TDA21460
✅ 直接替換📋 參考替代品（不在目錄中）
TDA21472AUMA1
✅ 直接替換📋 參考替代品（不在目錄中）
TDA21106
✅ 直接替換📋 參考替代品（不在目錄中）
FDMF8811
✅ 直接替換📋 參考替代品（不在目錄中）
SiC820A
✅ 直接替換📋 參考替代品（不在目錄中）
TDA21462AUMA1 最大額定值與電氣特性
| Product Type | Integrated Smart Power Stage (DrMOS) |
| 拓撲 | Synchronous Buck Half-Bridge with integrated gate driver |
| 最大輸出電流 | 60 A |
| Input Voltage Range (PVIN) | 4.25 V to 16 V |
| Switching Frequency Range | 100 kHz to 1500 kHz |
| Driver Supply (VCC) | 4.5 V to 5.5 V |
| Bootstrap Supply (VDRV) | 4.5 V to 5.5 V |
| High-Side MOSFET | Integrated OptiMOS N-channel |
| Low-Side MOSFET | Integrated OptiMOS N-channel |
| Integrated Schottky Diode | Yes (across low-side MOSFET) |
| Current Sense | Internal MOSFET current sense with temperature compensation |
| OCP Threshold | Programmable via ILIM pin |
| UVLO Protection | VCC and VDRV under-voltage lockout |
| Thermal Protection | IC temperature reporting + thermal shutdown |
| Fault Detection | Phase fault detection (FAULT output) |
| PWM Input | Differential (PWM and /PWM) compatible with 3.3 V tri-state controllers |
| 封裝 | PG-IQFN-39-2 (39-pin Power Quad Flat No-Lead) |
| 安裝類型 | Surface Mount with top-side exposed thermal pad |
| 工作接面溫度 | -40 C to +125 C |
| MSL 等級 | 1 (Unlimited) |
| RoHS 狀態 | Compliant |
| Quantity per Reel | 5000 |
| Packaging | Tape & Reel (TR) |
TDA21462AUMA1 腳位配置
| 腳位 1 | PGND — Power ground for low-side MOSFET source |
| 腳位 2 | LGATE — Low-side gate drive output (internal) |
| 腳位 3 | PGND — Power ground for low-side MOSFET source |
| 腳位 4 | VCC — 5V driver supply voltage |
| 腳位 5 | VDRV — 5V bootstrap supply voltage |
| 腳位 6 | BOOT — Bootstrap capacitor connection for high-side gate drive |
| 腳位 7 | UGATE — High-side gate drive output (internal) |
| 腳位 8 | SW — Switch node connection to output inductor |
| 腳位 9 | PVIN — Power input voltage (4.25V to 16V) |
| 腳位 10 | PVIN — Power input voltage (4.25V to 16V) |
| 腳位 11 | PWM — PWM control input (positive) |
| 腳位 12 | /PWM — PWM control input (complementary) |
| 腳位 13 | ILIM — OCP threshold programming resistor |
| 腳位 14 | IMON — Current monitor output (analog) |
| 腳位 15 | TMON — IC temperature monitor output |
| 腳位 16 | FAULT — Phase fault flag output (active low) |
| 腳位 17 | NC — Not connected (per datasheet) |
| 腳位 18 | NC — Not connected (per datasheet) |
| 腳位 19 | NC — Not connected (per datasheet) |
| 腳位 20 | NC — Not connected (per datasheet) |
| 腳位 21 | PGND — Power ground |
| 腳位 22 | PGND — Power ground |
| 腳位 23 | PGND — Power ground |
| 腳位 24 | PGND — Power ground |
| 腳位 25 | PGND — Power ground |
| 腳位 26 | PGND — Power ground |
| 腳位 27 | PGND — Power ground |
| 腳位 28 | PGND — Power ground |
| 腳位 29 | PGND — Power ground |
| 腳位 30 | PGND — Power ground |
| 腳位 31 | NC — Not connected (per datasheet) |
| 腳位 32 | NC — Not connected (per datasheet) |
| 腳位 33 | PVIN — Power input voltage |
| 腳位 34 | PVIN — Power input voltage |
| 腳位 35 | PVIN — Power input voltage |
| 腳位 36 | PVIN — Power input voltage |
| 腳位 37 | PVIN — Power input voltage |
| 腳位 38 | PVIN — Power input voltage |
| 腳位 39 | PVIN — Power input voltage |
安全工作區 - Pulsed Drain Current vs Drain-Source Voltage
典型應用
TDA21462AUMA1 適用於 6 應用s: AI Accelerator / GPU Core Rail VRM, 12 V Intermediate Bus Point-of-Load, Industrial 24 V to 5 V/3.3 V Buck Converter, Telecom Base Station Power Module, Server and Storage Voltage Regulator Modules, Automotive 12 V ECU Power Distribution.
AI Accelerator / GPU Core Rail VRM
The TDA21462AUMA1 is ideally suited as the synchronous buck power stage for AI accelerator and GPU core rails drawing 30 A to 60 A per phase at 0.8 V to 1.2 V output. Its 60 A continuous rating, 1000 kHz switching capability, and 2 percent-accurate internal current sense enable tight multiphase current sharing across three to eight parallel stages, delivering 180 A to 480 A of total load with sub-1 percent mismatch. Placed downstream of a 12 V intermediate bus from the server motherboard, the exposed top-side thermal pad and source-down package optimize heat transfer into inner copper planes with thermal vias. The integrated Schottky diode across the low-side MOSFET reduces body-diode reverse-recovery losses, which is critical at high switching frequencies typical of AI accelerator point-of-load designs.
推薦
12 V Intermediate Bus Point-of-Load
The TDA21462AUMA1 fits perfectly into 12 V intermediate bus point-of-load converters powering ASICs, network processors, and DDR memory in telecom and datacom systems. Its 4.25 V to 16 V PVIN range covers both nominal 12 V operation and transient excursions up to 16 V, while the integrated gate driver eliminates the need for an external bootstrap diode and high-side gate driver IC. Compared to discrete MOSFET plus driver implementations, the co-packaged DrMOS shrinks the power stage footprint by approximately 50 percent and reduces switch-node parasitic inductance to below 1 nH, dramatically cutting ringing and EMI.
推薦
Industrial 24 V to 5 V/3.3 V Buck Converter
In industrial PLC, factory automation, and motor-drive auxiliary rails, the TDA21462AUMA1 can be paired with a front-end 24 V-to-12 V buck to deliver isolated 5 V or 3.3 V logic rails at 30 A to 60 A. The wide PVIN tolerance accommodates industrial 24 V bus transients, and the cycle-by-cycle OCP with programmable threshold protects downstream logic against load faults without external current-sense amplifiers. The integrated thermal shutdown with TMON reporting gives the system controller a digital thermal telemetry channel for predictive maintenance and derating in high-ambient industrial enclosures.
推薦
Telecom Base Station Power Module
The TDA21462AUMA1 is a strong fit for 4G/5G base-station power modules where high efficiency at partial load is critical for thermal management in sealed outdoor enclosures. Its low quiescent current and integrated Schottky diode across the low-side MOSFET enable 5 to 8 percent efficiency gains versus discrete solutions at 10 A to 30 A partial loads, reducing heatsink requirements. Differential tri-state PWM compatibility lets designers pair it directly with multiphase controllers from Renesas, Infineon, or ON Semiconductor, while the FAULT output provides rapid fault isolation across parallel phases.
推薦
Server and Storage Voltage Regulator Modules
The TDA21462AUMA1 is widely deployed in 12 V-input VRM modules for servers, workstations, and enterprise SSDs where a 60 A continuous rating in a compact surface-mount package enables higher current density on the VRM card. Its 1000 kHz switching capability supports smaller output inductors and capacitors, freeing board area for high-bandwidth memory channels. Multiphase current sharing using the IMON output with 1 percent accuracy across phases satisfies Intel VR14 and AMD SVI3 load-line requirements for CPU and chipset core rails.
推薦
Automotive 12 V ECU Power Distribution
Although the TDA21462AUMA1 is the industrial-grade variant, its 4.25 V to 16 V PVIN tolerance and integrated protections suit non-safety-critical 12 V automotive ECUs such as infotainment, ADAS sensor preprocessing, and body controllers. The phase fault detection with FAULT output supports ASIL-B functional safety architectures when paired with an external supervisory MCU, while the TMON thermal reporting enables overtemperature derating under high-ambient underhood conditions. Designers targeting full AEC-Q100 qualification should evaluate the Infineon TDA21462 automotive Q1 variant instead.
推薦
推薦產品摘要
工程參考資料，適用於 TDA21462AUMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | TDA21460 | TDA21472AUMA1 | TDA21106 | FDMF8811 | SiC820A |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-IQFN-39-2 | PG-IQFN-39-2 - same | PG-IQFN-39-2 - same | PG-IQFN-39-2 - same | PQFN-39 - same footprint family | PG-IQFN-39 - same footprint family |
| Maximum Output Current | 60 A | 60 A | 80 A | 50 A | 60 A | 60 A |
| Input Voltage Range (PVIN) | 4.25 V to 16 V | 4.25 V to 16 V | 4.25 V to 16 V | 10.8 V to 13.2 V | 4.5 V to 18 V | 4.5 V to 18 V |
| Switching Frequency Range | 100 kHz to 1500 kHz | 100 kHz to 1500 kHz | 100 kHz to 1500 kHz | 100 kHz to 1000 kHz | 200 kHz to 2000 kHz | 200 kHz to 1500 kHz |
| Integrated Schottky Diode | Yes | Yes | Yes | No | Yes | Yes |
| OCP Programmability | Programmable via ILIM | Programmable via ILIM | Programmable via ILIM | Fixed | Programmable | Programmable |
| Lifecycle Status | Active | Active | Active | Obsolete | Active | Active |
主要差異化特點
- Higher efficiency at 30-60 A load versus predecessor TDA21460 (對比TDA21460)
- Wider 4.25-16 V PVIN range versus 12V-only TDA21106 (對比TDA21106)
- Integrated temperature-compensated current sense (對比SiC820A (Vishay))
設計說明
Place input MLCC capacitors within 1 mm of the PVIN and PGND pins to minimize the high-frequency input current loop. Use 4 to 6 x 22 uF 25V X5R ceramic capacitors in parallel plus a single 470 uF aluminum-polymer bulk capacitor. Flood the top-side exposed thermal pad with a 5 x 5 array of 0.3 mm thermal vias into 4 inner copper planes; this typically reduces theta_JA to below 10 C/W. Keep the BOOT capacitor loop (BOOT to SW) under 2 mm total trace length and use a 0.1 uF X7R ceramic rated 25V minimum.
Estimated power dissipation at VIN=12V, VOUT=1.0V, IOUT=50A, FSW=800 kHz, efficiency approximately 90 percent: P_loss = VIN * IOUT * (1 - efficiency) = 12 * 50 * 0.10 = 60 W. With theta_JA of approximately 10 C/W (4-layer PCB with thermal vias), junction temperature rise = 60 W * 10 C/W = 60 C above ambient. For a 55 C ambient telecom enclosure, TJ would be 115 C - within the 125 C limit but requiring derating. Forced airflow of 200 LFM reduces theta_JA by 30 percent and is recommended for continuous 60 A operation.
Do not exceed 16 V PVIN, even transiently - the OptiMOS high-side FET avalanche-rating breakdown threshold is approximately 20 V but sustained operation above 16 V risks gate-oxide stress. Add a 18 V TVS clamp (e.g., SMBJ18A) at the PVIN pin if the upstream 12 V bus can spike during hot-plug events. Always program the ILIM resistor before applying PWM - leaving ILIM floating triggers false OCP trips within microseconds. The /PWM input must be biased properly to avoid tri-state latchup; consult the controller datasheet for pull-up/pull-down requirements.
合規資訊
RoHS and REACH compliant per Infineon product page. Industrial grade, not AEC-Q100 qualified; AEC-Q100 variant available separately. Halogen-free per JEDEC JS709.
