存储IC
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EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron
The Micron Technology EDB5432BEBH-1DAUT-F-D is a 512Mbit mobile LPDDR2 SDRAM memory chip organized as 16M x 32, operating at 533 MHz from a 1.14V to 1.95V supply, housed in a 134-ball VFBGA (10 x 11.5 mm) package with automotive temperature grade. LPDDR2 (Low Power Double Data Rate 2) is a JEDEC-defined mobile DRAM interface designed to deliver high bandwidth at significantly lower power than conventional DDR memories. Within the memory hierarchy, it sits under the SDRAM family alongside LPDDR3, LPDDR4, and DDR3, and is widely used as application-processor working memory in systems where every milliwatt matters. Key features of the EDB5432BEBH-1DAUT-F-D include 512Mbit density in a space-saving 134-VFBGA footprint, a 533 MHz clock rate supporting high-throughput data transfer, an operating voltage window of 1.14V to 1.95V that covers the LPDDR2 1.2V core rail with 1.8V I/O provisions, and an automotive temperature grade suited to harsh environments. The D suffix denotes lead-free, RoHS-compliant ball metallurgy. Architecturally, LPDDR2 devices use a command-address bus shared across banks with CA burst operation, bank-group style parallelism, and low-standby current modes including self-refresh and deep power-down. These mechanisms let the memory retain context while drawing microamp-level currents, which is essential for battery-operated designs. Typical applications include automotive infotainment and telematics units, embedded application processors, industrial HMI panels, and portable instrumentation where a 32-bit-wide LPDDR2 bus provides adequate bandwidth with minimal power overhead. Design consideration: LPDDR2 signal integrity depends on length-matched CA/DQ routing, VTT decoupling, and disciplined ZQ calibration; consult the Micron datasheet layout guidelines before finalizing the PCB stackup. This page synthesizes distributor pricing, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
EMC3R0N - 32/64/128GB eMMC 5.1 Industrial TLC NAND | SP Industrial
The Silicon Power Industrial EMC3R0N is an eMMC 5.1 compliant embedded MultiMediaCard available in 32 GB, 64 GB, and 128 GB densities using TLC NAND flash, in a compact industrial-grade BGA-153 package. It delivers sequential read performance up to 320 MB/s and write performance up to 240 MB/s over an 8-bit HS400 interface, with up to 3,000 program/erase cycles per block, targeting industrial and embedded workloads that demand predictable latency and extended product lifecycle. The device integrates an MMC controller, NAND flash, and firmware in a single package, simplifying host CPU integration versus raw NAND designs. What is an eMMC device? An embedded MultiMediaCard (eMMC) is a managed NAND flash package that combines raw flash memory, a flash controller, and the standardized JEDEC eMMC interface in a single BGA. eMMC sits in the hierarchy: raw NAND -> managed NAND (eMMC) -> removable storage (SD/UFS). It reduces host CPU load because the controller handles ECC, bad-block management, wear leveling, and block translation transparently to the operating system. Key features include HS400 DDR interface for high-throughput access, optional pSLC mode for endurance-critical workloads, 3,000 P/E cycles per TLC block, JEDEC eMMC 5.1 protocol compliance, and industrial temperature grade. The integrated controller offloads bad-block management, wear leveling, and ECC from the host, while command queueing and secure boot/secure write protect features support Linux/Android and RTOS designs. Architecturally, the EMC3R0N pairs a TLC NAND array with a dedicated flash controller that exposes the standard JEDEC eMMC 5.1 host interface (CMD, DAT[7:0], CLK, RST_n). The internal controller implements hardware ECC, block remapping, and a pseudo-SLC (pSLC) mode that maps TLC blocks as single-bit cells to boost endurance, a key differentiator versus discrete NAND designs. Typical applications include industrial IoT gateways, point-of-sale (POS) terminals, factory HMI panels, surveillance NVR, automotive infotainment, and boot/media storage for embedded Linux systems on NXP i.MX, Rockchip, and Allwinner SoCs. For high-write workloads, consider the pSLC-configured EMC5R0N (30,000 P/E cycles) for longer endurance. When designing with the EMC3R0N, confirm the host SoC supports the JEDEC eMMC 5.1 HS400 mode and provides a 1.8V or 3.3V VCCQ rail (the EMC3R0N is typically 3.3V VCC / 1.8V VCCQ). Follow SP Industrial PCB layout guidelines for BGA-153 fan-out, controlled-DAT trace impedance (50 ohm), and decoupled VCC/VCCQ near-package vias. This page synthesizes SP Industrial distributor availability, drop-in eMMC 5.1 alternatives, and practical embedded-storage design notes not found in the manufacturer datasheet alone.
EPCQ16ASI8N - 16Mb Serial Config Device SOIC-8 | Altera (Intel)
The Intel (Altera) EPCQ16ASI8N is a 16Mb in-system-programmable serial configuration device designed to store FPGA bitstreams, operating at 3.3V in an 8-pin SOIC package. A serial configuration device is a non-volatile flash memory optimized specifically for loading configuration data into an FPGA at power-up. In the memory IC hierarchy, it belongs to configuration PROMs for FPGAs, a subset of serial NOR flash memory. The FPGA includes dedicated logic that reads the bitstream from the EPCQ device over a serial interface (active serial or passive serial modes) during every power cycle, so the configuration memory is a mission-critical element of any standalone FPGA system. The EPCQ16ASI8N offers 16 Mbit of capacity, sufficient for mid-range Intel/Altera FPGAs and CPLDs. It supports fast read operations including quad-serial data modes, which minimize boot times by transferring four bits per DCLK cycle. In-system programmability (ISP) allows the device to be reprogrammed via a JTAG-to-configuration chain using tools such as Intel Quartus Prime without removing the part from the board. The device operates from a single 3.3V supply, keeping power-rail design simple. Architecturally, the EPCQ-A family uses standard serial NOR flash commands, and its state machine is optimized for FPGA load sequencing, including proper power-on-to-first-read behavior. The industrial temperature version (I suffix) supports -40C to +85C operation, suiting harsh-environment deployments. Typical applications include bitstream storage for Intel Cyclone and MAX series devices, remote FPGA field upgrades, industrial control, and communications equipment where the FPGA must load autonomously at power-up. Design tip: verify that your FPGA's configuration mode (e.g., Active Serial x1 or Fast x4) and the maximum supported EPCQ density match the 16Mb device before layout. Pull NCONFIG and NSTATUS appropriately and keep DCLK traces short. This page adds distributor pricing, drop-in alternatives, comparison tables, and practical design notes beyond the manufacturer datasheet.
H58G46AK6PX033 - 16Gb LPDDR5-6400 Automotive DRAM | SK Hynix
The SK Hynix H58G46AK6PX033 is an automotive-grade 16Gb (2GB) LPDDR5 SDRAM memory IC operating at 6400 Mbps/pin with a x16 interface and core/IO power rails of 1.8V / 1.05V / 0.5V, housed in a 315-ball FBGA package. It is qualified for automotive deployments where high bandwidth, low power, and long-term supply reliability are mandatory. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of JEDEC low-power SDRAM, defined by the JEDEC JESD209-5 standard. As a class of dynamic random access memory, LPDDR devices sit within the memory IC hierarchy alongside DDR SDRAM and GDDR, but prioritize power efficiency and space savings for mobile, edge computing, and embedded platforms. LPDDR5 introduces bank group architecture, deep sleep mode, and advanced refresh management to cut idle and active power versus LPDDR4X. Key features of the H58G46AK6PX033 include the 6400 Mbps/pin data rate, delivering high aggregate bandwidth on a x16 bus; the 16Gb density in a single-die package for compact BOM designs; automotive-grade qualification supporting AEC-aligned automotive programs; and a low-voltage VDDQ domain of 0.5V that reduces IO switching power. The device supports multiple supply rails (1.8V VDD2, 1.05V VDD1, 0.5V VDDQ) typical of the LPDDR5 power architecture. Architecturally, the device uses LPDDR5 bank group organization with dynamic frequency scaling support, allowing the host controller to throttle the clock between traffic bursts to minimize power. WCK and CK differential clocking sustain the 6400 Mbps transfer rate, while on-die termination and training modes maintain signal integrity across the FBGA interface. Typical applications include automotive infotainment and ADAS domain controllers, telematics and dashboard units, industrial controllers and computing modules, embedded logging systems, and high-performance mobile/consumer platforms. The 2GB-per-device density suits both main-memory and firmware/data logging roles. Design consideration: LPDDR5 routing demands strict length matching, reference-plane continuity, and controller-side training; consult the manufacturer datasheet for skew and impedance targets before layout signoff. This page synthesizes distributor sourcing data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.
H58G46AK6PX033N - LPDDR5 16Gb 6400Mbps Automotive DRAM | SK hynix
The SK hynix H58G46AK6PX033N is a 16Gb (2GB) LPDDR5 SDRAM automotive-grade DRAM component with a x16 I/O organization, 6400 Mbps/pin data rate, and power rails of 1.8V (VDD2), 1.05V (VDDQ) and 0.5V (core VDD1), housed in a 315-ball FBGA package. The suffix N denotes the commercial/tray ordering option within the H58G46AK6PX033 family. LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-standardized mobile and automotive memory interface belonging to the DRAM hierarchy: LPDDR5 -> SDRAM -> DRAM -> semiconductor memory IC. Compared with DDR4/DDR5, LPDDR5 optimizes power efficiency with lower I/O swing and deep power-down states, making it the dominant volatile memory for battery-powered and thermally constrained platforms, including automotive ADAS domain controllers. Key features of the H58G46AK6PX033 include the 6400 Mbps pin speed (LPDDR5-6400 class), a 16Gb density organized as x16, and automotive qualification for extended-reliability deployments such as infotainment, telematics, and ADAS memory subsystems. SK hynix LPDDR5 also implements bank-group architecture, on-die termination refinements, and a WCK clocking scheme that sustains high effective bandwidth at low power. The 315-ball FBGA footprint supports compact PCB layouts typical of compute modules and system-on-module designs. Architecturally, the device uses the LPDDR5 16b-channel style command/data interface with dual WCK clocks, DQS strobes per byte lane, and programmable drive strength. The 1.8V/1.05V/0.5V triple-rail scheme separates interface power from core power, enabling DVFS power management by the host memory controller. Typical applications include automotive ADAS domain controllers, digital cockpits and infotainment SoCs, industrial computing modules, edge AI accelerators, and high-performance mobile/consumer computing systems requiring 2GB LPDDR5 per component. Design consideration: verify the host SoC memory controller supports LPDDR5-6400 timing and that the 315-ball routing follows SK hynix length-matching and reference-plane guidance in the manufacturer datasheet. This page synthesizes verified distributor listings, drop-in alternative analysis, and procurement guidance not consolidated in the manufacturer datasheet.
H58G46AK6QX033 - LPDDR5-6400 2GB Automotive DRAM | SK Hynix
The SK hynix H58G46AK6QX033 is an automotive-grade LPDDR5 DRAM memory IC delivering 16Gb (2GB) of density with a 16-bit data interface and a maximum data rate of 6400 Mbps per pin, housed in a fine-pitch ball grid array (FBGA) package. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of JEDEC-defined low-power synchronous DRAM technology, optimized for mobile, edge computing, and automotive systems that require high memory bandwidth with strict power budgets. Within the memory hierarchy, LPDDR5 sits under the broader categories of DRAM, synchronous memory, and semiconductor memory ICs, and is distinguished from DDR5 DIMM memory by its soldered-down BGA mounting, lower operating voltages, and deep power-down states. Key features of the H58G46AK6QX033 include its 6400 Mbps peak data rate, 16-bit (x16) bus organization, 16Gb per-die density class, and automotive qualification targeting extended temperature and reliability requirements for vehicle platforms. The 16Gb organization allows a single package to provide 2GB of main memory, reducing board area compared with stacking multiple lower-density packages. Architecturally, LPDDR5 introduces bank groups, WCK clocking, and features such as DVFS (dynamic voltage frequency scaling) and deep-sleep modes that let the memory controller trade bandwidth for power in real time. At 6400 Mbps the interface supplies up to 12.8 GB/s of peak bandwidth on a single x16 channel, sufficient for ADAS perception stacks, infotainment, and domain controllers. Typical applications include automotive ADAS domain controllers, digital cockpits and infotainment SoCs, telematics gateways, and high-reliability industrial computing modules where low-power soldered memory is required. Design consideration: LPDDR5 signal integrity at 6400 Mbps demands careful length-matched routing, reference plane continuity, and SoC memory-controller training; always verify the SoC's LPDDR5 speed-grade support and follow the platform vendor's layout guidelines. This page synthesizes distributor stock data, drop-in alternative candidates, and procurement guidance not found in the manufacturer datasheet, with pricing verified as of 2026-09-05.
H58G56AK6PX032 - 32Gb LPDDR5-6400 Automotive DRAM | SK Hynix
The SK Hynix H58G56AK6PX032 is a 32Gb (4GB) LPDDR5 SDRAM memory IC organized as 512M x 64, operating at 6400 Mbps/pin, in a 315-ball FBGA package rated for automotive applications. Supply rails span 1.8V (VDD2), 1.05V (VDD1) and 0.5V (VDDQ), following the JEDEC LPDDR5 power architecture. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of JEDEC-defined low-power DRAM, designed for battery-powered and thermally constrained systems such as smartphones, vehicles, and edge computing modules. Within the memory hierarchy, DRAM sits between non-volatile storage (NAND flash) and on-chip SRAM caches, providing high-bandwidth working memory for processors. LPDDR5 doubles effective data rate versus LPDDR4X by introducing WCK clocking, 16n/32n prefetch refinements, and per-bank refresh improvements. Key features of the H58G56AK6PX032 include the 6400 Mbps/pin data rate, which yields up to 51.2 GB/s peak bandwidth on the x64 bus; the 32Gb density in a single package; an automotive-grade qualification level suitable for in-vehicle infotainment, ADAS and telematics platforms; and the compact 315-ball FBGA footprint that enables dense stacked or side-by-side memory arrangements next to the SoC. Architecturally, the device uses SK Hynix advanced DRAM process technology with LPDDR5 dynamic voltage scaling across VDD2/VDD1/VDDQ rails, deep power-down and self-refresh modes to cut standby power, and link error-checking capabilities demanded by automotive safety workloads. Typical applications include automotive infotainment head units, ADAS domain controllers, camera-surround computing modules, and high-bandwidth industrial edge platforms that require 4GB of low-power working memory. When designing this device into a memory subsystem, pay close attention to LPDDR5 fly-by routing, VDDQ termination, and WCK signal integrity; PCB stackup and length matching are the dominant success factors at 6400 Mbps. This page synthesizes verified distributor stock data, drop-in family alternatives, and practical design guidance not found in the manufacturer datasheet alone.
H58G56AK6PX032N - 4GB LPDDR5 6400Mbps 315FBGA | SK Hynix
The SK Hynix H58G56AK6PX032N is a 4GB (32Gb) automotive-grade LPDDR5 SDRAM DRAM memory IC delivering a 6400 Mbps/pin data rate in a 315-ball Fine-Pitch Ball Grid Array (FBGA) package. Organized as 512M x 64 (x16 configuration), it operates from a triple-rail supply of 1.8V (VDD2), 1.05V (VDDQ), and 0.5V (VDD1 core), making it one of the most power-efficient high-bandwidth mobile memory solutions available. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of the JEDEC LPDDR SDRAM family, the dominant form of main memory in smartphones, tablets, and increasingly automotive and edge-compute systems. Within the power-management hierarchy of a system-on-chip platform, the LPDDR5 device sits as the volatile working memory tier, sitting above non-volatile storage such as NAND flash and boot ROM. Key features include the 6400 Mbps maximum data rate per pin, which at a x64 bus width yields aggregate bandwidth in excess of 50 GB/s; the low-voltage triple supply rail that reduces dynamic power versus LPDDR4X; and automotive product qualification per the AK6 part-number prefix, targeting AEC-relevant quality flows for in-vehicle infotainment and ADAS platforms. Architecturally, the device uses SK Hynix advanced DRAM process technology with bank-group parallelism, deep power-down and self-refresh power states, and per-byte DQ masking. The 315FBGA ball map supports high-speed fly-by routing with controller-side equalization (DFE/DRX), essential for signal integrity at 6400 Mbps on long PCB traces. Typical applications include automotive infotainment and ADAS domain controllers, 5G smartphone and tablet main memory, edge AI accelerator buffering, and industrial computing modules where high bandwidth and low standby power coexist. A key design consideration: at 6400 Mbps, PCB stackup, trace-length matching, and reference-plane continuity dominate timing margin - consult the SK Hynix system design guide and validate with IBIS/S-parameter models before layout sign-off. This page synthesizes distributor stock and pricing data, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
H58G56AK6QX032 - 32Gb LPDDR5-6400 Automotive DRAM | SK Hynix
The SK Hynix H58G56AK6QX032 is a 32Gb (4 GB) automotive-grade LPDDR5 DRAM memory IC operating at a 6400 Mbps/pin data rate, organized as 512M x64 in a 315-ball FBGA package with core supply of 1.05V, VDDQ of 0.5V, and VDD2 of 1.8V. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of the JEDEC LPDDR SDRAM family, designed for mobile, edge computing, and automotive systems where bandwidth-per-watt matters more than raw capacity per rank. Within the memory hierarchy it sits as the main system DRAM, sitting between high-speed caches and long-term NAND flash storage, and it is the dominant main-memory standard for SoC-based platforms including ADAS domain controllers and infotainment head units. Key features of the H58G56AK6QX032 include the 6400 Mbps pin speed (LPDDR5-6400), a x64 organization providing 51.2 GB/s peak bandwidth per device, an automotive qualification level suited to extended temperature environments, and the low-voltage signaling of LPDDR5 (0.5V VDDQ) that significantly reduces I/O power compared with LPDDR4X. The FBGA-315 ball-grid array provides reliable solder-joint performance under vibration and thermal cycling typical of automotive deployments. Technically, LPDDR5 introduces bank-group-aware architectures, 16-bank operation, and enhanced DVFS (dynamic voltage frequency scaling) of the core rail, allowing the memory controller to trade speed against power in real time. SK Hynix fabricates this device on an advanced DRAM process with on-die termination and DFE (decision feedback equalization) receivers to sustain 6400 Mbps signaling integrity across the channel. Typical applications include ADAS/autonomous-driving domain controllers, automotive infotainment and digital cockpit SoCs, telematics and gateway modules, and high-performance edge computing platforms requiring certified automotive memory. The x64 bus width makes it a natural fit alongside mid-range SoCs such as the Intel/Altera Agilex-family co-processors and automotive SoCs with 64-bit LPDDR5 interfaces. When designing with this device, validate the memory controller's LPDDR5 speed-grade support, keep trace lengths length-matched to the fly-by/command-address topology, and confirm the 3-rail power sequencing (VDD2 1.8V, VDD 1.05V, VDDQ 0.5V) in your PMIC selection. This page synthesizes distributor stock data, drop-in alternatives within the SK Hynix LPDDR5 family, and procurement guidance not found in the manufacturer datasheet.
H58G56AK6QX032N - 32Gb LPDDR5-6400 DRAM, Automotive | SK Hynix
The SK Hynix H58G56AK6QX032N is an automotive-grade 32Gb (4GB) LPDDR5 SDRAM (512M x64 organization) with a maximum data rate of 6400 Mbps per pin, operating from a 0.5V core voltage with 1.05V and 1.8V I/O and interface rails, packaged in a 315-ball fine-pitch ball grid array (FBGA-315). LPDDR5 (Low Power Double Data Rate 5) is the fifth-generation JEDEC mobile DRAM standard, part of the broader SDRAM family that underpins memory hierarchies from mobile devices to automotive ADAS platforms. Compared to LPDDR4X, LPDDR5 doubles available pin speed, adds bank group architecture refinements, and introduces voltage domains (VDDQ at 0.5V) that reduce I/O power substantially at equal bandwidth, making it the dominant main-memory type for bandwidth-hungry embedded computing modules. Key features of this part include the 6400 Mbps operating speed for high instantaneous bandwidth, a x64 wide I/O organization that simplifies bus design on memory controllers, automotive qualification for data storage, firmware boot and embedded logging in vehicles, and the dense 32Gb monolithic die that reduces BOM complexity versus stacking smaller parts. The 315-ball FBGA package enables a compact, low-inductance surface-mount footprint. Architecturally, LPDDR5 uses split 16n prefetch with WCK double-data-rate clocking and bank-group interleaving, sustaining high efficiency even at partial loads. The low 0.5V VDDQ rail cuts I/O switching power, which is critical in thermally constrained ADAS and edge-AI modules. Typical applications include automotive infotainment and cluster systems, ADAS perception controllers, data-storage buffering, industrial computing modules, and consumer/computing main memory designs. Design consideration: LPDDR5 signal integrity at 6400 Mbps demands careful length matching, controlled impedance, and reference-plane-aware layout; follow the memory controller vendor's LPDDR5 routing guidelines and verify with eye-diagram compliance testing. This page synthesizes distributor sourcing data, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H58G66CK8BX147 - 8Gb x8 LPDDR5X 8533Mbps DRAM | SK hynix
The SK hynix H58G66CK8BX147 is an 8GB (1Gx8, 2-channel, 2CS) LPDDR5X SDRAM delivering LPDDR5X-8533 data rates in a 315-ball FBGA lead-free and halogen-free package, operating from 1.8V, 1.05V, and 0.5V supply rails. LPDDR (Low Power Double Data Rate) SDRAM is a member of the DRAM family of volatile memory ICs optimized for mobile and power-constrained systems. Compared with standard DDR SDRAM, LPDDR devices reduce core and I/O supply voltages, add deep power-down and per-bank refresh features, and prioritize bandwidth-per-watt, making them the dominant memory technology in the smartphone, tablet, and embedded compute hierarchy under the broader power management memory IC taxonomy. Key features include the LPDDR5X-8533 speed grade, which enables up to 8.5 Gbps per pin and multi-channel aggregate bandwidths well above LPDDR4X-class parts, a x8 I/O organization with dual chip-select supporting stacked or two-rank system configurations, and JEDEC-compliant x16/x8 single-channel SDRAM operation defined in the manufacturer's 315-ball FBGA specification. The device operates across an industrial-extended temperature range down to -25C per the FBGA specification document. Technically, the device uses SK hynix advanced DRAM process technology with dynamic voltage scaling across the 1.05V core domain and 0.5V I/O domain, reducing active and standby power versus LPDDR5 at 1.05V, per the SK hynix LPDDR5 product page describing LPDDR5/LPDDR5X as operating below LPDDR4X voltage levels. Typical applications include flagship smartphone SoC memory (Qualcomm Snapdragon-class platforms), AI edge accelerators requiring high bandwidth-to-power ratio, automotive infotainment and ADAS compute modules, and high-density embedded networking processors. A key design consideration is signal integrity at 8533 Mbps: PCB trace length matching, on-die termination configuration, and VDDQ decoupling must follow the SK hynix LPDDR5 system design guide to maintain eye margins. This page synthesizes distributor inventory signals, the manufacturer 315-ball FBGA specification, and drop-in alternative analysis not found on any single datasheet page.
H58G66CK8BX147N - 8GB LPDDR5X-8533 DRAM FBGA-315 | SK hynix
The SK hynix H58G66CK8BX147N is a 64Gb (8GB) LPDDR5X SDRAM device organized as x8 in a 315-ball FBGA package, supporting data rates up to 8533 Mbps with a low-voltage core supply in the 0.5 V to 1.8 V domain range. It is a JEDEC-compliant, single-channel mobile DRAM built on SK hynix advanced DRAM process technology. LPDDR5X (Low Power Double Data Rate 5X) is the extended-speed evolution of the LPDDR5 standard defined by JEDEC. As a class of synchronous dynamic random-access memory, LPDDR devices prioritize power efficiency and bandwidth-per-watt over the absolute latency of desktop DDR, placing them in the memory IC hierarchy: SDRAM -> DDR SDRAM -> LPDDR family -> LPDDR5/LPDDR5X. LPDDR5X raises signaling rates beyond the 6400 Mbps of LPDDR5 while retaining the low-voltage 1.05 V-class core supply, making it the dominant memory type for flagship smartphones, AI edge accelerators, and automotive infotainment. Key features of the H58G66CK8BX147N include its 64Gb density in a single monolithic die-class package, an x8 I/O organization suited to 64-bit bus designs using eight devices, LPDDR5X-8533 operation for maximum bandwidth, and dynamic voltage/frequency scaling inherited from the LPDDR5 architecture. Deep power-down and per-bank refresh modes minimize standby current in battery-operated systems. Technically, the device is specified in SK hynix 315-ball FBGA documentation, which defines requirements for JEDEC-compliant x16 and x8 single-channel SDRAM devices. Bank groups, burst lengths, and DVFSC/DVFSQ operation follow the LPDDR5 JEDEC protocol, with the X-speed bin extending CAS latency tables for 8533 Mbps operation. Typical applications include flagship smartphone SoC memory, AI edge computing modules, tablet and notebook DRAM-down designs, and automotive ADAS compute platforms where memory bandwidth per watt is the limiting factor. Designers should pay close attention to fly-by command/address routing, on-die termination settings, and controller training algorithms, since LPDDR5X at 8533 Mbps leaves minimal timing margin; silicon-proven controller support and re-training routines are essential. This page synthesizes distributor availability data, the SK hynix FBGA specification PDF, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix
The SK hynix H5AN4G6NBJR-RDC is a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as 256M x 16, operating from a 1.2V supply in a 96-ball TFBGA (FBGA-96) rectangular package, 7.5 mm wide. It belongs to the H5AN4GxNBJR consumer DDR4 family and provides high-bandwidth main memory for cost-sensitive embedded and consumer designs. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory. Compared with DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases the internal bank count, and adds features such as bank groups that raise effective data rates. In the system hierarchy, a DDR4 SDRAM sits under the DRAM class, under volatile semiconductor memory, and serves as the main system memory between the processor cache and non-volatile storage such as NAND flash. Key features of the H5AN4G6NBJR family include fully synchronous operation referenced to both rising and falling edges of the clock, automatic and self-refresh modes, a data mask function, an asynchronous reset function, dynamic on-chip termination (ODT), ZQ calibration, write leveling, and CRC function support. These capabilities simplify controller interfacing and improve signal integrity at high data rates on multi-layer PCBs. Architecturally, the device uses a CMOS core with bank-group organization and a double-data-rate I/O that transfers data on both clock edges. The -RDC speed grade suffix identifies the validated speed bin and operating conditions for this ordering code, while the BJR die and FBGA-96 package are shared across the family, enabling footprint-compatible density and organization options. Typical applications include set-top boxes, smart TVs, network video recorders, industrial controllers, and consumer-grade main memory modules where 4Gb density in a x16 organization is preferred for simplified routing of a 16-bit data bus. The industrial -I temperature variants extend use into harsher environments. When designing with this device, verify the speed grade against your memory controller timing table, follow SK hynix layout guidance for length-matched data lines, and implement ZQ calibration with the recommended precision reference resistor. This page synthesizes distributor pricing tiers, same-package drop-in alternatives within the H5AN4G6NBJR/H5AN4G8NBJR families, and practical design notes not consolidated in the manufacturer datasheet.
H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix
The SK Hynix H5AN4G6NBJR-UHC is a 4Gbit DDR4 SDRAM organized as 256M x 16, operating at up to 1.6 GHz (DDR4-3200 class data rates) from a 1.14V to 1.26V core supply, housed in a 96-ball FBGA (PBGA-96) surface-mount package rated from -40C to +95C. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. A DDR4 DRAM transfers data on both rising and falling edges of the clock, and all operations are fully synchronous to that clock, allowing the memory controller to pipeline row activation, column read/write, and precharge commands. In the system hierarchy, a DRAM like this sits as main-system memory below CPU caches and is a core building block of any power-management and memory-subsystem design. Key features include the wide industrial temperature range of -40C to +95C, automatic self-refresh, a data mask (DM) function for byte-wise write masking, an asynchronous reset (RESET_n) input, dynamic on-die termination (ODT), ZQ calibration for output driver impedance, write leveling for fly-by topology routing, and CRC support for command/address integrity. These functions simplify high-speed board design and improve signal integrity on multi-drop DDR4 buses. Technically, the device uses CMOS technology with internal bank groups that allow fast back-to-back access between group and within group, and on-die termination reduces external termination components. The 1.2V-class core supply (1.14V-1.26V) lowers dynamic power compared with DDR3's 1.5V rails, which reduces total system thermal load at equivalent bandwidth. Typical applications include industrial controllers, computing modules, embedded logging and data acquisition systems, networking equipment, and replacement sourcing for DDR4-based main-memory designs where 4Gb x16 density and industrial temperature rating are required. For design, ensure the memory controller supports DDR4 training (write leveling, read/write leveling, ZQ calibration) and provide a clean 1.2V rail with adequate decoupling at each VDD ball group. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix
The SK hynix H5AN4G8NBJR-PBC is a 4Gb (gigabit) CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as 512M x 8, operating from a 1.2V supply, and packaged in a 78-ball FBGA surface-mount package. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing. As a DRAM category member, it sits in the memory hierarchy below CPU cache and above storage, providing volatile, high-bandwidth working memory. Compared with DDR3, DDR4 doubles bank groups to 4, lowers the core voltage from 1.5V to 1.2V, and raises per-pin data rates well beyond 2133 Mbps, making it the standard memory IC for embedded controllers, industrial PCs, networking equipment, and consumer platforms. Key features of the H5AN4G8NBJR family include 4Gb density in an x8 organization, JEDEC-standard DDR4 interface operation, and availability in both consumer (BJR) and embedded temperature variants. The datasheet defines a normal operating case-temperature range of 0C to 85C, with extended operation permitted up to 95C case temperature where refresh rate is increased, and the industrial variant supports -40C to 85C. The device is offered lead-free and halogen-free per the manufacturer datasheet. Technically, the device uses an 8n-bit prefetch architecture with bank groups, enabling high effective bandwidth at moderate core frequencies. termination (ODT), DLL, and programmable CAS latency support signal integrity at DDR4 data rates. The PBC speed grade suffix denotes the manufacturer speed bin; system designers must validate tCK, CL, and tRCD/tRP/tRC timings for their memory controller configuration. Typical applications include embedded main memory for industrial controllers, networking and communication equipment line cards, set-top boxes, gaming consoles, and consumer electronics requiring large memory density and high bandwidth. A key design consideration is routing: DDR4 fly-by topology with on-die termination, matched-length address/command traces, and careful VREF decoupling are required to meet eye-mask compliance at the rated data rate. This page synthesizes distributor and datasheet data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix
The SK hynix H5AN4G8NBJR-UHI is a 4 gigabit DDR4 SDRAM organized as 512M x 8, operating at the DDR4-2400 speed grade with a 1.2 V supply, packaged in a 78-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package. The -UHI suffix denotes the industrial temperature option of the H5AN4G8NBJR consumer/industrial DDR4 family. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family and a cornerstone of modern power management ICs and memory subsystems. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles bank groups to enable higher bandwidth, and adds features such as bank group architecture, DBI (data bus inversion), and CA parity, making it the mainstream main-memory technology for embedded and industrial platforms between DDR3 and DDR5. Key features of the H5AN4G8NBJR-UHI include its large 4Gb density in a single x8 die, DDR4-2400 data-rate operation (PC4-19200), and the 1.2 V low-voltage core that reduces system power versus DDR3 solutions. The x8 organization simplifies controller design and supports single-bit-error correction schemes such as chipkill-style ECC at board level. According to the SK hynix H5AN4GxNBJR series datasheet, the family is ideally suited for main-memory applications requiring large density and high bandwidth. Technically, the device implements the JEDEC DDR4 SDRAM interface with bank-group parallelism, on-die termination (ODT), and programmable CAS latency, supporting burst lengths of 8 and sequential/interleave access modes. Power-down and self-refresh modes reduce standby consumption, which is valuable in industrial systems with constrained thermal budgets. Typical applications include industrial-control main memory, networking equipment line-card buffering, embedded compute modules (COM Express, SMARC), and test-and-measurement systems that require DDR4-2400 bandwidth at industrial temperature ranges. The -UHI industrial grade differentiates it from consumer -UHC parts rated for narrower ambient conditions. Design consideration: DDR4-2400 routing requires careful length matching of data groups, controlled-impedance stackups, and accurate VTT termination; follow the SK hynix system design guide and controller layout rules for fly-by command/address topology. This page synthesizes distributor sourcing data, same-footprint drop-in alternatives from SK hynix, Micron, and Samsung, and practical DDR4 design notes not found in the manufacturer datasheet alone.
H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix
The SK hynix H5AN4G8NBJR-VKC is a 4 Gigabit DDR4 SDRAM organized as 512M x8, operating at a data rate of 2666 Mbps (DDR4-2666, CL19) from a 1.2 V core supply, housed in a 78-ball FBGA package measuring approximately 7.5 x 11 mm. As part of SK hynix's DDR4 Synchronous DRAM family, it delivers high density and bandwidth for main memory subsystems. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a volatile memory technology that stores each bit in a capacitor-based cell refreshed at regular intervals. In the memory hierarchy, it sits as a main-system-memory component between CPU caches (SRAM) and storage (NAND flash), interfacing to a memory controller over a parallel, source-synchronous clocked bus. DDR4 improved on DDR3 by lowering operating voltage from 1.5 V to 1.2 V, increasing bank groups, and raising data rates up to 3200 Mbps in this generation. Key features of the H5AN4G8NBJR-VKC include its 4Gb density in a x8 organization, 2666 Mbps data rate operation, lead-free and halogen-free construction, and the compact 78-ball FBGA (FBGA-78, 7.5 x 11 mm) surface-mount package that minimizes signal-path length for high-speed operation. The part supports standard DDR4 features such as bank group architecture, on-die termination, and DLL-based timing control per the JEDEC DDR4 specification family. Technically, the device is a CMOS DRAM using internal bank architecture with multiple bank groups enabling faster back-to-back access. The VKC speed grade suffix denotes the 2666 Mbps commercial temperature grade (0 C to 85 C per DDR4 SDRAM conventions for the -C temperature suffix). Data is transferred on both edges of the differential clock, with command and address inputs latched on the rising edge of CK. Typical applications include desktop and notebook PC main memory modules (UDIMM/SODIMM), embedded x86 and ARM computing platforms, networking equipment line cards, industrial computers, and set-top or smart TV systems that require large, high-bandwidth volatile memory at low power. For design, memory controller settings must match the CL19 (approximate, speed-grade dependent) CAS latency and tRCD/tRP timings of the 2666 grade, and series termination plus VTT termination per DDR4 layout guidelines are essential for signal integrity at 2666 Mbps. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes beyond what a single datasheet offers.
H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix
The SK hynix H5AN4G8NBJR-VKI is a 4Gb (512M x 8) DDR4 SDRAM operating at 1.2V with data rates up to 2666 Mbps, housed in a 78-ball FBGA (fine-pitch ball grid array) package with industrial-grade temperature rating. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR memory technology, occupying the main-memory tier of the computer memory hierarchy between CPU caches and storage. Compared to DDR3, DDR4 lowers operating voltage from 1.5V to 1.2V, doubles internal bank count to 16 (via bank groups), and increases prefetch and signaling efficiency, delivering higher bandwidth at lower power per transfer. Key features of the H5AN4G8NBJR-VKI include 4Gb density in a x8 organization, 2666 Mbps data rate, and the industrial VKI speed/temperature grade supporting operation beyond the commercial range. The 8n prefetch architecture with bank grouping (4 bank groups x 4 banks) enables the high data rate while a programmable CAS latency, on-die termination (ODT), and data mask / DBI support simplify controller integration. Architecturally, the device is a CMOS DDR4 SDRAM with internal banks organized as 512M x 8, using a 17-bit row / 10-bit column addressing scheme typical for 4Gb x8 density. Differential clocking (CK/CK#), DQS strobes per byte lane, and SSTL12 I/O signaling provide the timing accuracy needed at 2666 Mbps. The -VKI suffix denotes SK hynix speed grade V with industrial temperature qualification, suited to environments exceeding 0C to +85C commercial limits. Typical applications include industrial PCs and embedded controllers, networking equipment such as routers and switches, server DIMM modules, and industrial automation systems requiring stable, long-lifecycle DDR4 sourcing. Design consideration: DDR4 routing requires length-matched fly-by command/address topology, per-byte DQS trace matching, and proper ODT calibration (ZQ calibration resistor) to maintain signal integrity at 2666 Mbps. This page synthesizes distributor inventory, drop-in family alternatives, and practical design notes beyond the manufacturer datasheet.
H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix
The SK hynix H5AN8G4NAFR-PBC is an 8Gb (gigabit) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 2Gb x 4, operating at a nominal supply of 1.2 V (VDD and VDDQ = 1.2 V +/- 0.06 V) with a separate 2.5 V wordline pump supply (VPP), packaged in a 78-ball FBGA surface-mount package. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random access memory, a member of the broader DRAM memory hierarchy that sits between cache memory (SRAM) and storage (NAND flash) in computing systems. DDR4 introduced bank groups, lower operating voltage, and higher data rates compared to DDR3, making it the dominant main-memory technology for servers, workstations, desktops, and embedded controllers. The H5AN8G4NAFR-PBC belongs to SK hynix's 8Gb DDR4 family (H5AN8G4NAFR-xxC for x4, H5AN8G8NAFR-xxC for x8, H5AN8G6NAFR-xxC for x16 organizations). Key features include 8Gb density in a single x4 component, 16 internal banks arranged in 4 bank groups (BG0-BG1 with BA0-BA1), a 17-bit row address (A0-A16), DLL-on operation, and on-die termination consistent with the JEDEC DDR4 SDRAM standard. The -PBC suffix identifies the speed bin and temperature/lead-free grade within the family; the datasheet speed-bin tables cover DDR4-1600, DDR4-1866, DDR4-2133, and DDR4-2400 operating points, with Geardown Mode considerations noted for the lower bins. Architecturally, the device uses SK hynix CMOS DRAM process technology with DDR4 bank-group pipelining, which increases effective data bandwidth by allowing back-to-back accesses to different bank groups without the full tRC row-cycle penalty. I/O signaling uses the DDR4 SSTL12 interface at VDDQ = 1.2 V with programmable drive strength and ODT settings defined in the mode registers. Typical applications are main-memory DIMMs and soldered-down memory subsystems for servers and data centers, industrial PCs and embedded controllers, networking equipment, and test/measurement platforms requiring large memory density and high bandwidth. Designers should consult the datasheet speed-bin table and IPP (DRAM package power) specification when planning power delivery; DDR4 VPP = 2.5 V (+0.25/-0.125 V) must be provided in addition to the 1.2 V core/I/O rail. Signal integrity at DDR4-2400 requires length-matched, ODT-tuned fly-by routing per the memory controller's design guide. This page adds distributor sourcing data, drop-in alternatives, and practical design notes beyond the manufacturer datasheet.
H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix
The SK hynix H5AN8G4NAFR-RDC is an 8Gb (1G x 4) CMOS Double Data Rate IV (DDR4) Synchronous DRAM operating from a 1.2V supply in a 78-ball FBGA package. It is a Lead-Free and Halogen-Free component (RoHS compliant), part of the H5AN8G4NAFR-xxC family of 8Gb DDR4 SDRAM devices. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology for servers, workstations, and embedded computing platforms. Within the memory hierarchy, DDR4 SDRAM sits between the processor caches (SRAM) and storage (SSD/HDD), providing the high-bandwidth, large-density main memory pool. Compared to DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases bank groups, and raises data rates well beyond 2133 MT/s. Key characteristics of this device include its 8Gb density organized as 1G x 4, the low 1.2V core supply, and a ball-to-ball JEDEC-standard DDR4 x4 FBGA-78 footprint. As an SDRAM, it uses a differential clock (CK_t/CK_c) with command, address, and data strobe signaling for synchronous operation, as described in the manufacturer datasheet. The device uses SK hynix CMOS DRAM process technology with 8Gb monolithic die, supporting the large memory density and high bandwidth demanded by main memory subsystems. The -RDC speed-grade suffix designates the certified operating bin; consult the official datasheet for exact timing parameters (CL, tRCD, tRP) of the -RDC bin. Typical applications include server and data center main memory DIMMs, workstation and desktop PC memory modules, networking and telecom equipment memory, industrial computing, and embedded processor memory subsystems requiring high density per component. When designing with this component, ensure the memory controller supports the DDR4 x4 organization, follow the datasheet termination and VDDQ decoupling guidance, and verify the speed-grade timing against the controller configuration. This page synthesizes datasheet information, drop-in alternatives, and practical design notes not found in the standard manufacturer datasheet.
H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix
The SK hynix H5AN8G4NAFR-VKC is an 8Gb (2G x 4) CMOS DDR4 SDRAM DRAM operating at DDR4-2666 with CL19 latency and a 1.2V supply, housed in a 78-ball FBGA (PBGA78) package. It is a lead-free, halogen-free, RoHS-compliant main-memory component designed for systems requiring large memory density and high bandwidth. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory. A DRAM stores each bit in a capacitor-based cell and requires periodic refresh, but delivers far higher density and lower cost per bit than SRAM. In the memory hierarchy, DRAM sits between CPU caches (SRAM) and storage (NAND flash), serving as the primary working memory of servers, desktops, industrial controllers, and embedded computing modules. Key features of this device include 8Gb density per monolithic die, a x4 organization suited to ECC-protected and high-reliability server memory subsystems, and a 2666 Mbps data rate per pin (speed bin VK, CL19). The part belongs to the H5AN8G4NAFR-xxC family, which shares common die and footprint definitions with 8Gb x8 (H5AN8G8NAFR-xxC) and 8Gb x16 (H5AN8G6NAFR-xxC) siblings, simplifying multi-width platform designs. It operates from a single 1.2V VDD/VDDQ rail, consistent with the DDR4 JEDEC standard, reducing power versus 1.5V DDR3 predecessors. The device targets server main memory (ECC DIMMs, RDIMM/LRDIMM modules), desktop and workstation UDIMMs, industrial computing modules, and replacement sourcing for legacy DDR4-2666 designs. The x4 organization is particularly valued in ECC server memory where 72-bit wide buses aggregate eighteen x4 devices with inline ECC. In a design, DDR4 devices require careful address/command bus termination, fly-by topology on multi-device modules, matched trace lengths, and a clean 1.2V rail with per-device decoupling. Signal integrity at 2666 Mbps demands controlled impedance and simulation of the address/command and DQ/DQS networks. This page synthesizes verified distributor and datasheet data with drop-in alternatives, design guidance, and procurement context not consolidated in the manufacturer datasheet alone.
H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix
The SK hynix H5AN8G6NAFR-PBC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as 512M x 16, operating from a 1.2V core supply (VDD/VDDQ = 1.20V +/- 0.06V) with a 2.5V VPP wordline supply, housed in a 96-ball TFBGA (F-package, rectangular) lead-free and halogen-free RoHS-compliant package. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a class of volatile memory that transfers data on both the rising and falling edges of the clock signal. Within the memory hierarchy, DDR4 SDRAM sits in the main-memory tier between CPU caches (SRAM) and storage (NAND flash), delivering the high bandwidth and large density that modern processors require. JEDEC-standardized DDR4 lowered the interface voltage from DDR3's 1.5V to 1.2V and introduced the VPP rail, bank groups, and higher prefetch efficiency. Key features of the H5AN8G6NAFR family include large 8Gb (8 gigabit) density per die, a wide DDR4 data-rate window covering 1600, 1866, 2133, and 2400 MT/s speed bins (per the speed bin tables in the manufacturer datasheet), auto/self-refresh support, and the x16 organization that simplifies 16-bit and 32-bit memory bus designs without byte-lane complexity. The separate VPP input supports the wordline boosting scheme unique to DDR4, reducing core power versus DDR3. The device uses SK hynix's CMOS DRAM process with a DLL-on operating mode; speed bin tables are valid only when Geardown Mode is disabled, as stated in the datasheet. Internal bank-group architecture enables tightly scheduled commands such as CAS-to-CAS (tCCD_S/tCCD_L) while maintaining signal integrity on the CA and DQ buses. Typical applications include main memory for embedded x86 and ARM platforms, industrial PCs, networking equipment, set-top boxes, and any main-memory application requiring large density and high bandwidth, where two x16 devices can form a 32-bit DDR4 channel. Design consideration: DDR4 routing requires length-matched fly-by CA routing and on-die termination (ODT) configuration via the mode register set; VPP must be present before or with VDD to avoid reliability stress. This page synthesizes datasheet data, drop-in alternatives, and design guidance not consolidated in the manufacturer datasheet alone.
H5AN8G6NAFR-VKC - 8Gb DDR4 SDRAM 512Mx16 1.2V | SK Hynix
The SK Hynix H5AN8G6NAFR-VKC is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 512M x 16, operating at 1.2V in a 96-ball FBGA (PBGA96) lead-free, halogen-free package. It belongs to the H5AN8G4NAFR/H5AN8G8NAFR/H5AN8G6NAFR family, which is ideally suited for main memory applications requiring large memory density and high bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in PCs, servers, and embedded systems. In the memory hierarchy, DDR4 SDRAM sits above cache memories (SRAM) as main system memory, offering high density at low cost per bit, and transfers data on both rising and falling clock edges for bandwidth of several gigabytes per second per device. Key features of the H5AN8G6NAFR-VKC include its 8Gb (gigabit) density in a single x16 organization, a 1.2V core supply that reduces power versus DDR3's 1.5V, and the compact FBGA-96 ball-grid package that simplifies high-density PCB routing. The -VKC speed grade code denotes DDR4-2666 class timing in SK Hynix's naming convention, supporting mainstream embedded and industrial memory designs. The part is specified as Lead-Free and Halogen-Free and is RoHS compliant per the manufacturer datasheet. Architecturally, the device uses CMOS DRAM core technology with internal banks, burst-oriented operation, and standard DDR4 signaling (open-drain DQS strobes, on-die termination support, and JEDEC-standard command set). x16 organization means two data bytes per access, which suits designs using fewer memory chips and 16-bit or 32-bit wide memory buses, common in embedded controllers, networking appliances, and graphics/display buffers. Typical applications include industrial PC and embedded controller main memory, SSD controller write buffers, networking and communication equipment line-card buffers, and set-top-box or smart-TV system memory where 1 GB per chip reduces component count. Design consideration: DDR4 fly-by routing requires careful length matching of CK/CA signals, per-byte DQS termination, and VTT termination power design; verify controller timing versus the -VKC speed bin datasheet AC tables before layout. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix
The SK Hynix H5AN8G6NCJR-UHC is an 8Gb (gigabit) CMOS Double Data Rate IV (DDR4) SDRAM organized as 512M x 16, operating at the DDR4-2400 speed grade from a 1.2 V supply, housed in a 96-ball Fine-Pitch Ball Grid Array (FBGA-96) package. DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock, doubling the effective data rate of DDR3 at the same internal clock frequency. Within the memory hierarchy it sits as main-memory class volatile storage, above flash (NOR/NAND) and below CPU caches. The JEDEC-defined DDR4 generation adds bank groups, a lower 1.2 V core supply, and finer process geometries to raise bandwidth and cut power versus DDR3. Key features of this device include the 2400 Mbps/pin data rate, the x16 data-width organization that suits 16-bit and 32-bit memory buses in embedded designs, 0C to +95C operating range with automatic self-refresh, and the standard DDR4 feature set: auto precharge, asynchronous reset, data mask (DM), write leveling, CRC, dynamic on-die termination (ODT), and ZQ calibration. The -UHC speed-grade suffix encodes the 2400 Mbps binning and operating temperature class. The die is fabricated on SK Hynix CMOS DRAM process technology with reduced cell leakage, supporting the low standby and self-refresh currents expected of the DDR4 generation. Bank-group architecture allows back-to-back accesses to different bank groups at maximum bus speed, sustaining effective bandwidth close to the theoretical 2400 MT/s. Typical applications include main memory for industrial controllers, embedded computing modules and COM Express boards, firmware logging buffers, network appliances, and replacement sourcing for DDR4-2400 x16 designs where the H5AN8G6NCJR family is specified. Design consideration: the x16 organization means only one chip select per 16 bits is needed, simplifying routing, but all DDR4 fly-by or point-to-point topologies still require length-matched address/command traces and per the JEDEC DDR4 specification a VTT termination rail. This page adds drop-in alternatives, procurement FAQs, and design notes beyond the raw datasheet: it synthesizes distributor stock data and cross-reference findings into one decision resource.