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SK hynix

H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix

料号: H5AN4G6NBJR-UHC ✓ 量产中
有现货 1-3 个工作日内发货
1.14 V to 1.26 V Vdss FBGA-96 (PBGA-96) Package 1.6 GHz Speed DDR4 SDRAM Memory
低至 $8.09 USD / 件
最小起订量: 1 |
价格更新于: 2026-09-04
批量定价
数量 单价 小计
1 $9.74 $9.74
10 $9.35 $93.50
100 $8.92 $892.00
500 $8.5 $4,250.00
1,000 $8.09 $8,090.00
ℹ️ 所有价格均以 USD 计价

H5AN4G6NBJR-UHC 概述

The SK Hynix H5AN4G6NBJR-UHC is a 4Gbit DDR4 SDRAM organized as 256M x 16, operating at up to 1.6 GHz (DDR4-3200 class data rates) from a 1.14V to 1.26V core supply, housed in a 96-ball FBGA (PBGA-96) surface-mount package rated from -40C to +95C.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. A DDR4 DRAM transfers data on both rising and falling edges of the clock, and all operations are fully synchronous to that clock, allowing the memory controller to pipeline row activation, column read/write, and precharge commands. In the system hierarchy, a DRAM like this sits as main-system memory below CPU caches and is a core building block of any power-management and memory-subsystem design.

Key features include the wide industrial temperature range of -40C to +95C, automatic self-refresh, a data mask (DM) function for byte-wise write masking, an asynchronous reset (RESET_n) input, dynamic on-die termination (ODT), ZQ calibration for output driver impedance, write leveling for fly-by topology routing, and CRC support for command/address integrity. These functions simplify high-speed board design and improve signal integrity on multi-drop DDR4 buses.

Technically, the device uses CMOS technology with internal bank groups that allow fast back-to-back access between group and within group, and on-die termination reduces external termination components. The 1.2V-class core supply (1.14V-1.26V) lowers dynamic power compared with DDR3's 1.5V rails, which reduces total system thermal load at equivalent bandwidth.

Typical applications include industrial controllers, computing modules, embedded logging and data acquisition systems, networking equipment, and replacement sourcing for DDR4-based main-memory designs where 4Gb x16 density and industrial temperature rating are required.

For design, ensure the memory controller supports DDR4 training (write leveling, read/write leveling, ZQ calibration) and provide a clean 1.2V rail with adequate decoupling at each VDD ball group.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

直接替换替代料: H5AN4G6NBJR-UHC ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: H5AN4G6NBJR-UHC (相同外形与封装尺寸) ——差异在于 Package, Interface, Organization, Supply Voltage (VDD), Density.

SK hynix
Package: FBGA-96 (PBGA96), rectangular
Interface: DDR4 (double data rate, synchronous)
Organization: 256M x 16 (268435456 words x 16 bits)
对比 H5AN4G6NBJR-UHC →
SK hynix
Interface: CMOS, fully synchronous
Density: 4 Gb
对比 H5AN4G6NBJR-UHC →
SK hynix
Package: FBGA-96 / TFBGA (PBGA96)
Interface: Parallel
Supply Voltage (VDD): 1.2 V nominal (1.14 V to 1.26 V)
对比 H5AN4G6NBJR-UHC →
SK hynix
Package: TFBGA-78 (11 x 7.5 mm)
Interface: DDR4 (JEDEC)
Organization: 512M x 8
对比 H5AN4G6NBJR-UHC →
SK hynix
Package: FBGA-96 (PBGA96)
Interface: CMOS, DDR4 (double data rate)
Organization: 256M x16
对比 H5AN4G6NBJR-UHC →
SK hynix
Package: FBGA-96
Density: 16 Gb (2 GB)
对比 H5AN4G6NBJR-UHC →
SK hynix
Package: PBGA96 / FBGA-96 (TFBGA)
Interface: DDR4 (CMOS)
Density: 4 Gb
对比 H5AN4G6NBJR-UHC →
Samsung Electronics
Package: 96-ball FBGA
Interface: SSTL-12
Supply Voltage (VDD): 1.2 V
对比 H5AN4G6NBJR-UHC →
Micron Technology
Package: 96-ball FBGA, 9 x 14 mm
Interface: Parallel
Density: 4 Gbit
对比 H5AN4G6NBJR-UHC →

快速对比工具——选择替代料号进行并排对比:

H5AN4G6NBJR-UHI

✅ 直接替换
📦 FBGA-96
same die and 256M x16 organization; different speed/temperature bin suffix (-UHI vs -UHC)

📋 参考替代料(不在目录中)

H5AN4G6NBJR-PBC

✅ 直接替换
SK hynix
📦 FBGA-96
DDR4 SDRAM · 4 Gbit · 256M x 16 (268435456 words x 16 bits) · 1.2 V · DDR4 (double data rate, synchronous) · TFBGA · FBGA-96 (PBGA96), rectangular · 96

✓ 有现货

$6.6 / 个

查看数据手册 →

H5AN4G6NBJR-RDC

✅ 直接替换
SK hynix
📦 FBGA-96
DDR4 SDRAM · 4 Gb · 256M x 16 · 1.2 V · CMOS, fully synchronous · TFBGA (FBGA-96) · Rectangular · 7.5 mm

✓ 有现货

$6.15 / 个

查看数据手册 →

H5AN4G8NBJR-UHC

✅ 直接替换
SK hynix
📦 FBGA-96
DDR4 SDRAM · 4 Gbit · 512M x 8 · 2400 Mbps (PC2400) · 1.2 V · DDR4 (JEDEC) · TFBGA-78 (11 x 7.5 mm) · Surface Mount

✓ 有现货

$3.18 / 个

查看数据手册 →

K4A4G165WD-BCTD

✅ 直接替换
Samsung Electronics
📦 FBGA-96
DDR4 SDRAM · 4 Gbit · 256M x 16 · 2666 Mbps/pin (-BCTD speed grade) · 1.2 V · 2.5 V · SSTL-12 · Yes (DM per byte lane)

✓ 有现货

$19 / 个

查看数据手册 →

MT40A256M16GE-083E

✅ 直接替换
Micron Technology
📦 FBGA-96
DDR4 SDRAM · 4 Gbit · 256M x 16 · 1200 MHz (DDR4-2400) · 1.2 V · 96-ball FBGA, 9 x 14 mm · Surface Mount · Parallel

✓ 有现货

$2.2 / 个

查看数据手册 →

H5AN4G6NBJR-UHC 最大额定值与电气特性

存储器类型 DDR4 SDRAM
存储容量 4 Gbit
存储组织 256M x 16
Clock Frequency 1.6 GHz
Supply Voltage (VDD) 1.14 V to 1.26 V
Technology CMOS
工作温度 -40C to +95C
封装 FBGA-96 (PBGA-96)
安装类型 Surface Mount
Self Refresh Auto self-refresh
Data Mask Function Yes (DM)
Asynchronous Reset Yes (RESET_n)
On-Die Termination Dynamic ODT
ZQ Calibration Yes
Write Leveling Yes
CRC Function Yes (command/address CRC)
RoHS 状态 Compliant

H5AN4G6NBJR-UHC fbga-96 (pbga-96) 引脚配置指南

H5AN4G6NBJR-UHC(fbga-96 (pbga-96) 封装)的引脚配置。 该数字 IC 包含 GPIO、通信接口(UART、SPI、I2C)和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。

H5AN4G6NBJR-UHC 的 fbga-96 (pbga-96) 封装引脚图

暂无详细引脚数据: H5AN4G6NBJR-UHC.

请参阅 数据手册 以查看完整引脚配置。

典型应用

H5AN4G6NBJR-UHC 适用于 6 应用s: Industrial Controllers and PLCs, Embedded Computing Modules, Data Logging and Edge Storage Buffers, Networking and Communication Equipment, Automotive-Adjacent and Telematics Systems, Test and Measurement Instrumentation.

🏭

Industrial Controllers and PLCs

The H5AN4G6NBJR-UHC fits industrial controller and PLC main-memory designs because its -40C to +95C operating range covers unconditioned cabinets and outdoor enclosures where commercial-grade 0C to +85C memory would fail. Its 4Gb (256M x16) density provides ample working memory for control logic, protocol stacks, and data buffers at 1.6 GHz-class bandwidth. Features like auto self-refresh, dynamic ODT, ZQ calibration, and command/address CRC keep the DDR4 interface reliable in electrically noisy factory environments. Placed on a short fly-by bus with write leveling enabled and a regulated 1.14V-1.26V rail, the device delivers deterministic latency for real-time control loops without external termination components, reducing PCB cost.

🖥️

Embedded Computing Modules

Embedded computing modules (COMs, SOMs, SBCs) use the H5AN4G6NBJR-UHC as main system DRAM because the 256M x16 organization lets designers build 32-bit buses with just two devices, minimizing layer count and BGA routing complexity. The 1.14V-1.26V core supply keeps total module power low compared with DDR3L, improving thermal margins in fanless enclosures. Write leveling and read/write training support standard fly-by DDR4 topologies used with application processors from NXP, TI, and Rockchip. With -40C to +95C rating, the same module SKU can serve both commercial and industrial end markets, simplifying product qualification and inventory for module vendors.

🧩

Data Logging and Edge Storage Buffers

In industrial data loggers and edge-analytics gateways, the H5AN4G6NBJR-UHC serves as a high-bandwidth write buffer that stages sensor data before it is committed to NAND flash or pushed upstream. The 1.6 GHz-class interface absorbs burst data from multi-channel ADCs or camera streams, while auto self-refresh preserves buffer contents during low-power sampling intervals. The asynchronous RESET_n pin allows a supervisory controller to recover the memory deterministically after a system fault without power cycling, and the data mask (DM) function lets firmware update records in place without read-modify-write cycles. Its industrial temperature rating supports loggers mounted on motors, vehicles, and outdoor assets.

🌐

Networking and Communication Equipment

Packet buffers, deep-packet inspection tables, and routing tables in switches, routers, and industrial Ethernet equipment are natural fits for the H5AN4G6NBJR-UHC. The 256M x16 organization provides 4Gb of working memory per device, and the command/address CRC function protects control integrity on multi-drop buses common in networking backplanes. Dynamic ODT and ZQ calibration maintain signal integrity at 1.6 GHz-class data rates across backplane trace variations. Multiple devices can share a fly-by address/command bus with per-device chip select, letting designers scale from 512MB to multi-GB buffering on one footprint, with the industrial temperature range covering hardened outdoor network hardware.

🚗

Automotive-Adjacent and Telematics Systems

Telematics units, fleet recorders, and off-highway vehicle electronics that do not require AEC-Q100 qualification but operate in vehicular environments benefit from the H5AN4G6NBJR-UHC's -40C to +95C range and robust feature set. The 4Gb density supports map caching, video ring buffers from surround-view cameras, and OTA update staging. The asynchronous reset and self-refresh features support sleep/wake power strategies, allowing the DRAM to retain state while the host processor sleeps. Designers should validate vibration-driven solder-joint reliability for the FBGA-96 package under their mechanical profile and consider conformal coating for condensing environments.

🔧

Test and Measurement Instrumentation

Bench instruments, data acquisition systems, and protocol analyzers use the H5AN4G6NBJR-UHC as acquisition memory where its 1.6 GHz-class interface supports sustained streaming from high-speed ADCs into a 4Gb capture buffer. The 256M x16 bus organization pairs cleanly with 16-bit ADC pipelines, and the DM/data-mask path supports pre/post-trigger record management. Because instruments operate in air-conditioned labs, the industrial temperature rating provides extra margin against internal self-heating at high sample rates. ZQ calibration keeps output impedance matched across long probe-path PCB routing, and the FBGA-96 footprint allows buffer-size scaling by populating one or two devices on the same board.

What is the SK Hynix H5AN4G6NBJR-UHC?
The H5AN4G6NBJR-UHC is a 4Gbit DDR4 SDRAM from SK Hynix organized as 256M x 16, operating at up to 1.6 GHz from a 1.14V to 1.26V supply. It comes in a 96-ball FBGA package rated for -40C to +95C operation. According to distributor listings (JLCPCB, LCSC), the device supports auto self-refresh, data mask, asynchronous reset, dynamic on-die termination, ZQ calibration, write leveling, and CRC functions, making it suited to industrial main-memory applications.
What is the price of H5AN4G6NBJR-UHC?
The H5AN4G6NBJR-UHC is priced from approximately $8.09 to $9.74 per unit depending on quantity, as of 2026-09-04. LCSC lists the part starting around $8.09 at volume with an in-stock unit price near $9.74. XAIPART tier pricing is $9.74 at qty 1, dropping to $8.09 at qty 1000. Memory DRAM pricing fluctuates with the commodity DRAM spot market, so request a current quote before committing large-volume purchase orders.
Where to buy H5AN4G6NBJR-UHC online?
The H5AN4G6NBJR-UHC can be purchased from XAIPART as well as distributors including LCSC (product C2803260), JLCPCB assembly service, Ampheo, Win Source, Xecor, and Avaq. Stock status varies: LCSC has listed the part both in stock and out of stock at different times, and Octopart compares pricing from 11 distributors. For guaranteed delivery, place an RFQ with XAIPART, which sources original manufacturer-new components with datasheet verification.
Is H5AN4G6NBJR-UHC in stock and what is the lead time?
Stock status for the H5AN4G6NBJR-UHC changes frequently: LCSC has shown the part as out of stock in some listings and in stock in others, while JLCPCB supports it for PCB assembly. Commodity DDR4 lead times typically range from stock to several weeks depending on market conditions. As of 2026-09-04, contact XAIPART for real-time stock confirmation and delivery commitment before placing time-critical orders.
What is the best drop-in replacement for H5AN4G6NBJR-UHC?
The best drop-in replacements are same-family SK Hynix speed-grade variants (H5AN4G6NBJR-UHI, PBC, RDC) which share the identical FBGA-96 footprint, 256M x 16 organization, and pinout, differing mainly in speed bin and operating temperature. Cross-brand, the Samsung K4A4G165WD series and Micron MT40A256M16GE series are 4Gb x16 DDR4 SDRAMs in FBGA-96, and are JEDEC-standard pin-compatible substitutes. Always verify controller support and speed bin on the chosen replacement before qualifying it on your PCB.
What is the difference between H5AN4G6NBJR-UHC and H5AN4G8NBJR-UHC?
The key difference is bit organization: the H5AN4G6NBJR-UHC is 256M x 16 while the H5AN4G8NBJR-UHC is 512M x 8. Both are 4Gb DDR4 SDRAMs in the same FBGA-96 package with compatible ball footprints, but the x16 part has 16 data lines (single-rank 16-bit bus use) and the x8 part has 8 data lines, affecting data mask and, on some densities, bank architecture. Choose x16 for 16-bit memory buses; choose x8 when a 64-bit bus with chip-select granularity is needed.
H5AN4G6NBJR-UHC vs K4A4G165WD-BCTD - which is better for industrial designs?
Both are 4Gb x16 DDR4 SDRAMs in FBGA-96 and are functionally interchangeable on JEDEC-compliant designs. The SK Hynix H5AN4G6NBJR-UHC is rated -40C to +95C (industrial), which suits uncontrolled-temperature environments. The Samsung K4A4G165WD-BCTD speed bin and temperature option must be confirmed for your specific bin variant. Selection usually comes down to supply-chain considerations: second-source availability, unit pricing, and long-term availability commitments rather than electrical performance, since both follow the same JEDEC DDR4 standard.
Can the Samsung K4A4G165WD replace H5AN4G6NBJR-UHC?
Yes, in most designs the Samsung K4A4G165WD series can replace the H5AN4G6NBJR-UHC as a pin-compatible drop-in, since both are JEDEC-standard 4Gb x16 DDR4 SDRAMs in 96-ball FBGA. Confirm three items on your board: (1) the speed grade meets your controller's data-rate requirement up to 1.6 GHz class, (2) the operating temperature range matches your environment, and (3) your memory controller's DDR4 training and configuration files support the substitute. In-circuit validation is recommended for any second source.
When should I choose H5AN4G6NBJR-UHC over an 8-bit DDR4 part?
Choose the H5AN4G6NBJR-UHC (x16 organization) when your memory bus is 16 bits wide, when you need maximum density per chip-select on a narrow bus, or when PCB layer count must be minimized, since x16 parts halve the data-line routing count versus two x8 parts. Choose an x8 part (such as H5AN4G8NBJR-UHC) when you need 64-bit buses with finer chip-select granularity or when your controller's address mapping favors x8. Both share the same FBGA-96 footprint, allowing layout reuse.
Where to download the H5AN4G6NBJR-UHC datasheet PDF?
The H5AN4G6NBJR-UHC datasheet PDF is available from distributor datasheet repositories: DigiKey hosts the SK Hynix consumer DDR4 H5AN4G4/8/6NBJR series datasheet PDF, and datasheets.com, LCSC, and Win Source also provide free downloads. The series datasheet (H5AN4GxNBJR, Rev 1.7 dated 2018-03-20) covers the 4Gb x4/x8/x16 family including this part. Always download from a reputable distributor or the SK Hynix official site to ensure you have the latest revision.
Where can I find the H5AN4G6NBJR-UHC pinout?
The H5AN4G6NBJR-UHC pinout is defined by the 96-ball FBGA ball map in the SK Hynix H5AN4GxNBJR series datasheet, available via DigiKey and LCSC datasheet downloads. The ball map lists address pins (A0-A16), bank group (BG0-BG1) and bank (BA0-BA1) addresses, data pins DQ0-DQ15 with DQS/DQS_n differential strobes, DM data mask, RESET_n, CKE, CS_n, RAS_n/CAS_n/WE_n, ODT, and power/ground balls. LCSC also provides a package and pinout diagram for this part number.
What supply voltage does H5AN4G6NBJR-UHC require?
The H5AN4G6NBJR-UHC operates from a 1.14V to 1.26V core supply, which is the standard 1.2V-class DDR4 rail per JLCPCB's listing. This is lower than the 1.35V of DDR3L and 1.5V of DDR3, reducing dynamic power. Design your power distribution network to hold the rail within that window under all load transients, and decouple VDD, VDDQ, and VPP ball groups independently with bulk plus high-frequency ceramics placed close to the FBGA-96 package.
Is H5AN4G6NBJR-UHC suitable for industrial applications?
Yes, the H5AN4G6NBJR-UHC is well suited to industrial applications because it operates from -40C to +95C, an extended range compared with commercial-only 0C to +85C DDR4 parts. Its feature set - auto self-refresh, dynamic ODT, ZQ calibration, write leveling, and command/address CRC - supports reliable operation in industrial controllers, embedded logging systems, and computing modules. Confirm that your selected speed grade (indicated by the -UH suffix bin) meets your controller's frequency requirement across the full temperature range.
Is H5AN4G6NBJR-UHC the same as H5AN4G6NBJR-UHI?
No, they are not the same suffix bin, but they are the same die and package. The H5AN4G6NBJR-UHC and H5AN4G6NBJR-UHI are both 4Gb x16 DDR4 SDRAMs in FBGA-96 from SK Hynix; the suffix encodes the speed bin and operating temperature range. Both are pin-to-pin drop-in compatible on the same PCB. Verify that the substitute's speed grade meets your controller's clock rate before substitution, since performance bins may differ.
What are the key specifications of H5AN4G6NBJR-UHC that engineers should know?
The H5AN4G6NBJR-UHC is a 4Gb DDR4 SDRAM, 256M x 16 organization, 1.6 GHz clock capability, 1.14V-1.26V supply, -40C to +95C temperature range, in a 96-ball FBGA package. It supports auto self-refresh, data mask, asynchronous reset, dynamic on-die termination, ZQ calibration, write leveling, and CRC functions, with RoHS compliance. These parameters define its fit for industrial main-memory designs needing 4-bit-per-pin DDR4 bandwidth.

工程参考数据: H5AN4G6NBJR-UHC ——对比、设计指导和合规信息。

选型指南

Choose the H5AN4G6NBJR-UHC when you need 4Gb of DDR4 main memory on a 16-bit bus in an industrial environment (-40C to +95C) at up to 1.6 GHz-class rates. Within the SK Hynix family, choose H5AN4G6NBJR-UHI, PBC, or RDC when a different speed bin or better supply availability is needed - all share the same FBGA-96 footprint and 256M x16 organization. Choose H5AN4G8NBJR-UHC (512M x8) when your controller architecture or 64-bit bus design requires x8 organization. Cross-brand, choose Samsung K4A4G165WD-BCTD or Micron MT40A256M16GE-083E as JEDEC-compatible second sources - both are 4Gb x16 DDR4 in FBGA-96 - but confirm temperature range and speed bin against your design before qualifying. Honest trade-off: the industrial temperature rating typically carries a price premium over commercial bins; if your product only operates in controlled environments, a commercial-grade equivalent may reduce cost.

与替代料对比

参数 本产品 H5AN4G6NBJR-UHI H5AN4G8NBJR-UHC K4A4G165WD-BCTD MT40A256M16GE-083E
Package FBGA-96 FBGA-96 - same FBGA-96 - same FBGA-96 - same FBGA-96 - same
Brand SK Hynix SK Hynix SK Hynix Samsung Micron Technology
Density 4 Gbit 4 Gbit 4 Gbit 4 Gbit 4 Gbit
Organization 256M x 16 256M x 16 512M x 8 256M x 16 256M x 16
Supply Voltage 1.14 V to 1.26 V 1.14 V to 1.26 V 1.14 V to 1.26 V 1.2 V class 1.2 V class
Key Features Auto self-refresh, DM, async reset, dynamic ODT, ZQ cal, write leveling, CRC Same feature set (same die family) Same feature set, x8 organization JEDEC DDR4 standard feature set JEDEC DDR4 standard feature set

关键差异点

  • Industrial temperature range (对比 MT40A256M16GE-083E)
  • 16-bit organization halves bus device count (对比 H5AN4G8NBJR-UHC)
  • CRC-protected command/address bus (对比 K4A4G165WD-BCTD)

设计说明

Power the H5AN4G6NBJR-UHC from a dedicated 1.2V-class rail held within 1.14V-1.26V (per JLCPCB verified listing). DDR4 devices also require separate VPP (2.5V) and VDDQ domains on many controllers - check your processor's power tree. Provide bulk capacitance (e.g. 2x 100uF) plus distributed 0.1uF ceramics near each VDD/VDDQ ball group of the FBGA-96 package. Estimated: at 1.6 GHz-class operation a 4Gb DDR4 can draw several hundred milliamps on VDDQ, so size the regulator for transient steps rather than average current.

Use the standard DDR4 fly-by address/command topology and enable write leveling, ZQ calibration, and read/write training in the memory controller configuration for this device. Keep DQS/DQ trace length matching within the controller vendor's skew budget (typically a few mils per unit interval at DDR4-3200-class rates). The command/address CRC feature supported by this part should be enabled in noise-heavy environments such as motor drives, as it detects control-line corruption that would otherwise cause silent data corruption.

The -UH suffix denotes a specific speed/temperature bin; do not assume a different suffix (e.g. PBC or RDC) meets your data-rate requirement without checking the SK Hynix H5AN4GxNBJR series datasheet speed-bin tables. Also verify your controller's DDR4 training supports the -40C to +95C range, since ZQ calibration output drifts over temperature and periodic recalibration may be required at the extremes. Finally, FBGA-96 parts cannot be inspected by eye after reflow - insist on X-ray or electrical test when sourcing from brokers.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
无铅
Unknown
无卤
Unknown
冲突矿物
Unknown

RoHS compliance stated in JLCPCB verified listing for H5AN4G6NBJR-UHC. REACH, halogen-free, and conflict-minerals status not stated in provided data.

数据核验日期: 2026-09-04 ——数据由 XAIPART 元器件工程团队核验和整理

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SK Hynix H5AN4G6NBJR-UHC H5AN4G6NBJR-UHI H5AN4G8NBJR-UHC K4A4G165WD-BCTD Samsung MT40A256M16GE-083E Micron Technology DDR4 SDRAM DRAM Double Data Rate 4 FBGA-96 PBGA-96 BGA surface mount JEDEC DDR4 standard RoHS auto self-refresh on-die termination (ODT) ZQ calibration write leveling CRC industrial controllers memory bandwidth
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