10M08DCF256I7G vs 10M08DCF256C8G 对比
详细并排对比 10M08DCF256I7G 出自 Intel 和 10M08DCF256C8G 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 10M08DCF256I7G | 10M08DCF256C8G |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.20 | $2.28 |
| Series | MAX 10 | MAX 10 |
| Family | MAX 10 FPGA | — |
| Logic Elements (LE) | 8,000 | — |
| Embedded Memory (bits) | 387,072 | 387,072 (378 Kbits user flash + block SRAM) |
| User I/O Count | 178 | 178 |
| DSP Blocks (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| 封装 | 256-FBGA (FineLine BGA) | 256-LBGA (F256, FineLine BGA) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 工作温度 | -40C to +100C (Industrial) | 0C to +85C (commercial) |
| Supply Voltage - Core | [DATA_NEEDED: core voltage range] | — |
| Supply Voltage - I/O Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Configuration Memory | On-chip dual-configuration flash (non-volatile) | — |
| On-die ADC | 12-bit, up to 1 MSa/s | — |
| External Memory Interface | LPDDR2 / DDR3 / DDR3L | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Process Technology | 55 nm NOR-flash-backed CMOS | TSMC 55 nm embedded flash CMOS |
| Logic Elements | — | 8,000 |
| Pitch | — | 1.0 mm |
| Speed Grade | — | C8 (commercial, slowest speed bin) |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| Configuration | — | Internal flash (instant-on, non-volatile) |
| ADC | — | Dual 12-bit SAR, up to 17 analog inputs |
| 18x18 Multipliers | — | 8 |
| PLLs | — | 2 |
| Global Clock Networks | — | 4 |
| Design Software | — | Intel Quartus Prime (Lite / Standard / Pro) |
| MSL 等级 | — | 3 (168 hours) |