10M08DCF256I7G vs 10M08DCF256C8G Vergleich
Detaillierter Direktvergleich von 10M08DCF256I7G von Intel und 10M08DCF256C8G von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 10M08DCF256I7G | 10M08DCF256C8G |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,20 | $2,28 |
| Series | MAX 10 | MAX 10 |
| Family | MAX 10 FPGA | — |
| Logic Elements (LE) | 8,000 | — |
| Embedded Memory (bits) | 387,072 | 387,072 (378 Kbits user flash + block SRAM) |
| User I/O Count | 178 | 178 |
| DSP Blocks (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| Gehäuse | 256-FBGA (FineLine BGA) | 256-LBGA (F256, FineLine BGA) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Betriebstemperatur | -40C to +100C (Industrial) | 0C to +85C (commercial) |
| Supply Voltage - Core | [DATA_NEEDED: core voltage range] | — |
| Supply Voltage - I/O Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Configuration Memory | On-chip dual-configuration flash (non-volatile) | — |
| On-die ADC | 12-bit, up to 1 MSa/s | — |
| External Memory Interface | LPDDR2 / DDR3 / DDR3L | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Process Technology | 55 nm NOR-flash-backed CMOS | TSMC 55 nm embedded flash CMOS |
| Logic Elements | — | 8,000 |
| Pitch | — | 1.0 mm |
| Speed Grade | — | C8 (commercial, slowest speed bin) |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| Configuration | — | Internal flash (instant-on, non-volatile) |
| ADC | — | Dual 12-bit SAR, up to 17 analog inputs |
| 18x18 Multipliers | — | 8 |
| PLLs | — | 2 |
| Global Clock Networks | — | 4 |
| Design Software | — | Intel Quartus Prime (Lite / Standard / Pro) |
| MSL-Level | — | 3 (168 hours) |