1ED020I12FA2XUMA2 vs 1ED020I12B2XUMA1 对比

详细并排对比 1ED020I12FA2XUMA2 出自 Infineon 和 1ED020I12B2XUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 ✓ 量产中

规格对比

参数 1ED020I12FA2XUMA2 1ED020I12B2XUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.46 $2.65
功能 Galvanically isolated single-channel IGBT gate driver —
Isolation Technology Coreless transformer (CT) Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) 4500 Vrms 4500 Vrms
Output Current (Source/Sink) 2 A (rail-to-rail) —
Number of Channels 1 1
Configuration Single low-side / high-side driver —
封装 PG-DSO-20 PG-DSO-16-15 (300 mil wide-body DSO-16)
安装类型 Surface Mount Surface Mount
工作温度范围 -40 C to +125 C —
Automotive Qualification AEC-Q100 qualified —
Common-Mode Transient Immunity (CMTI) [DATA_NEEDED: CMTI value] —
Propagation Delay (typ) [DATA_NEEDED: tpd value] —
UVLO Primary Side [DATA_NEEDED: VUVLO_VCC1] —
UVLO Secondary Side [DATA_NEEDED: VUVLO_VCC2] —
Propagation Delay Matching [DATA_NEEDED: matching value] —
RoHS 状态 Compliant —
Insulation Type Basic insulation per DIN EN 60747-5-2 —
Driver Type IGBT / SiC / GaN compatible Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
工作温度 — -40 °C to +125 °C
MSL 等级 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价