1ED020I12FA2XUMA2 vs 1ED020I12B2XUMA1 비교

다음의 상세 나란히 비교: 1ED020I12FA2XUMA2 제조: Infineon 및 1ED020I12B2XUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 ✓ 활성

사양 비교

파라미터 1ED020I12FA2XUMA2 1ED020I12B2XUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.46 $2.65
기능 Galvanically isolated single-channel IGBT gate driver —
Isolation Technology Coreless transformer (CT) Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) 4500 Vrms 4500 Vrms
Output Current (Source/Sink) 2 A (rail-to-rail) —
Number of Channels 1 1
Configuration Single low-side / high-side driver —
패키지 PG-DSO-20 PG-DSO-16-15 (300 mil wide-body DSO-16)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -40 C to +125 C —
Automotive Qualification AEC-Q100 qualified —
Common-Mode Transient Immunity (CMTI) [DATA_NEEDED: CMTI value] —
Propagation Delay (typ) [DATA_NEEDED: tpd value] —
UVLO Primary Side [DATA_NEEDED: VUVLO_VCC1] —
UVLO Secondary Side [DATA_NEEDED: VUVLO_VCC2] —
Propagation Delay Matching [DATA_NEEDED: matching value] —
RoHS 상태 Compliant —
Insulation Type Basic insulation per DIN EN 60747-5-2 —
Driver Type IGBT / SiC / GaN compatible Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
동작 온도 — -40 °C to +125 °C
MSL 레벨 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

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