1ED3124MC12HXUMA1 vs 1ED3127MU12FXUMA1 对比

详细并排对比 1ED3124MC12HXUMA1 出自 Infineon 和 1ED3127MU12FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中
Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 量产中

规格对比

参数 1ED3124MC12HXUMA1 1ED3127MU12FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $0.74
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
输出数量 1 1
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升时间 15 ns —
下降时间 30 ns —
工作温度 -40 C to +125 C —
封装 PG-DSO-8 (DSO-8) PG-DSO-8-72 (SOIC-8 wide-body)
安装类型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 状态 Compliant Compliant
功能 — Single-channel isolated gate driver
输出配置 — High-side / Low-side, Inverting / Non-Inverting
Peak Output Current — 10 A (source/sink)
Continuous Output Current — 9 A
Supply Voltage (VCC2 secondary) — 12 V to 35 V
Supply Voltage (VCC1 primary) — 3 V to 5.5 V
Propagation Delay (typ.) — 15 ns
Delay Matching (typ.) — 30 ns
Galvanic Isolation — 3000 Vrms (coreless transformer)
工作温度范围 — -40C to +125C
Protection Features — Miller clamp, UVLO, DESAT short-circuit protection
Drives — IGBT, MOSFET, SiC MOSFET

数据手册与资源

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