1EDI20I12MFXUMA1 vs 1ED020I12B2XUMA1 对比

详细并排对比 1EDI20I12MFXUMA1 出自 Infineon 和 1ED020I12B2XUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 量产中

规格对比

参数 1EDI20I12MFXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.84 $2.65
功能 Isolated single-channel high-side gate driver —
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 1
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns 35 ns
Input Logic Inverting / Non-inverting —
输出配置 Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
封装 PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-16-15 (300 mil wide-body DSO-16)
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] -40 °C to +125 °C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
RoHS 状态 Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
MSL 等级 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

数据手册与资源

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