1EDI20I12MFXUMA1 vs 1ED020I12B2XUMA1 비교

다음의 상세 나란히 비교: 1EDI20I12MFXUMA1 제조: Infineon 및 1ED020I12B2XUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 활성

사양 비교

파라미터 1EDI20I12MFXUMA1 1ED020I12B2XUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.84 $2.65
기능 Isolated single-channel high-side gate driver —
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 1
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns 35 ns
Input Logic Inverting / Non-inverting —
출력 구성 Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
패키지 PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-16-15 (300 mil wide-body DSO-16)
실장 유형 Surface Mount Surface Mount
동작 온도 [DATA_NEEDED: operating temperature range] -40 °C to +125 °C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
RoHS 상태 Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
MSL 레벨 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

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