1EDN7116GXTMA1 vs 2EDF9275FXUMA1 对比
详细并排对比 1EDN7116GXTMA1 出自 Infineon 和 2EDF9275FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7116GXTMA1 | 2EDF9275FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $0.74 |
| 功能 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | — |
| Driver Configuration | Non-inverting, single low-side | Half-Bridge (High Side + Low Side) |
| Number of Drivers | 1 | 2 |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| 工作温度范围 | -40 °C to +125 °C | -40 °C to +125 °C |
| 封装 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-DSO-16-11 (150-mil DSO-16) |
| 安装类型 | Surface Mount | — |
| MSL 等级 | MSL3 | — |
| RoHS 状态 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| 输出数量 | — | 2 |
| Source Current | — | 4 A |
| Sink Current | — | 8 A |
| Propagation Delay (Typ.) | — | 37 ns |
| Channel-to-Channel Matching | — | [DATA_NEEDED: channel-to-channel matching] |
| Common-Mode Transient Immunity (CMTI) | — | 150 V/ns |
| Isolation Type | — | Functional (Galvanic, Coreless Transformer) |
| Input Logic Compatibility | — | CMOS / TTL (Non-Inverting) |
| Supply Voltage Range | — | [DATA_NEEDED: VCC range] |
| 上升时间 | — | [DATA_NEEDED: rise time] |
| 下降时间 | — | 4.5 ns |
| 安装方式 | — | SMD/SMT |
| Packaging | — | Cut Tape, MouseReel, Reel |
| Optimized For | — | CoolSiC™ MOSFETs (Wide-Bandgap) |
| REACH Status | — | [DATA_NEEDED: REACH status] |