1EDN7126GXTMA1 vs 1EDN7146GXTMA1 对比
详细并排对比 1EDN7126GXTMA1 出自 Infineon 和 1EDN7146GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7126GXTMA1 | 1EDN7146GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.29 | $1.05 |
| 功能 | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | — |
| Configuration | Non-Inverting | — |
| Channel Type | Single | — |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | — |
| Peak Source Current | 1.5 A | — |
| Peak Sink Current | 1.5 A | — |
| Common-Mode Voltage (CMR) | 200 V | — |
| Input Type | Truly Differential Input (TDI) | TDI (Truly Differential Inductor) |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | — |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | — |
| 工作温度范围 | -40C to +125C | — |
| 封装 | PG-VSON-10-4 | PG-VSON-10-4 |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Reach | Compliant | — |
| Lead-Free | Yes | — |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | — |
| Driver Type | — | High-side, single-channel |
| Number of Drivers | — | 1 |
| Logic Type | — | Non-Inverting |
| Maximum Bootstrap Voltage (VB) | — | 200 V |
| Supply Voltage (VCC) | — | 4.5 V to 20 V |
| Source/Sink Drive Current | — | 500 mA / 500 mA |
| Gate Drive Voltage | — | Up to 11 V (typ) |
| Propagation Delay (typ) | — | 40 ns |
| Rise/Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| UVLO (VCC) | — | Yes |
| UVLO (VB) | — | Yes |
| Bootstrap Diode | — | Integrated |
| 工作温度 | — | -40 C to +125 C |