1EDN7126GXTMA1 - 1.5A 200V TDI Gate Driver for GaN | Infineon
料号： 1EDN7126GXTMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.4 | $4.00 |
| 100 | $0.37 | $37.00 |
| 500 | $0.34 | $170.00 |
| 1,000 | $0.32 | $320.00 |
| 3,000 | $0.29 | $870.00 |
1EDN7126GXTMA1 概述
What is a GaN gate driver? A GaN gate driver is a specialized power-management IC that translates low-power PWM control signals from a system controller into the high-current, fast-edge drive levels required to switch a gallium-nitride high-electron-mobility transistor (HEMT). Within the broader power-management hierarchy, gate drivers sit between the controller IC (logic domain) and the power switch (GaN HEMT or Si MOSFET), and they are essential for unlocking the high dV/dt and low switching-loss advantages that GaN devices provide over silicon MOSFETs. Compared with general-purpose low-side MOSFET drivers, GaN drivers such as the 1EDN family are designed for tight timing symmetry, robust galvanic isolation, and the ability to handle large negative gate-drive transients.
Key features of the 1EDN7126GXTMA1 include 1.5 A peak source/sink drive strength, 200 V common-mode voltage transient immunity (CMR), true differential input with built-in hysteresis, and a wide operating voltage range that supports both 5 V and 12 V drive rails. The non-inverting single-channel architecture minimizes external component count, and the small PG-VSON-10-4 footprint (3 x 3 mm) saves PCB area in compact half-bridge or buck/boost power stages.
Technically, the part uses Infineon's TDI (truly differential input) stage to reject large common-mode transients caused by fast switching nodes, which is critical for hard-switched half-bridge topologies. The integrated bootstrap-compatibility and matched propagation delays (typical < 10 ns skew) help prevent shoot-through in synchronous rectifier configurations and enable megahertz-class switching frequencies without timing-induced loss penalties.
Typical applications include high-density DC-DC converters, telecom 48 V point-of-load stages, server and data-center power-delivery bricks, motor-drive auxiliary rails, and any high-frequency LLC or totem-pole PFC stage using GaN HEMTs.
When designing with this device, place it close to the GaN switch to minimize gate-loop inductance, and use a Kelvin-source connection. A small ferrite bead or gate resistor in series with the output is recommended to damp ringing and control edge rates.
This page synthesizes distributor pricing, drop-in compatible alternatives from the Infineon EiceDRIVER family, and PCB layout guidance not found in the manufacturer datasheet.
直接替换替代料： 1EDN7126GXTMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 1EDN7126GXTMA1 （相同外形与封装尺寸） ——差异在于 Package, Peak Sink Current, Peak Source Current, Input Type, Function.
快速对比工具——选择替代料号进行并排对比：
1EDN7146GXTMA1
✅ 直接替换✓ 有现货
$1.05 / 个
查看数据手册 →1EDN7550BXTSA1
✅ 直接替换✓ 有现货
$0.59 / 个
查看数据手册 →1EDN7511BXUSA1
✅ 直接替换✓ 有现货
$0.95 / 个
查看数据手册 →1EDN8550BXUSA1
✅ 直接替换📋 参考替代料（不在目录中）
1ED44173N01BXTSA1
✅ 直接替换✓ 有现货
$0.42 / 个
查看数据手册 →1EDN7126GXTMA1 最大额定值与电气特性
| 功能 | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | Non-Inverting |
| Channel Type | Single |
| Peak Source Current | 1.5 A |
| Peak Sink Current | 1.5 A |
| Common-Mode Voltage (CMR) | 200 V |
| Input Type | Truly Differential Input (TDI) |
| 工作温度范围 | -40C to +125C |
| 封装 | PG-VSON-10-4 |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Reach | Compliant |
| Lead-Free | Yes |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) |
1EDN7126GXTMA1 引脚配置
| 引脚 1 | IN+ — Differential input positive (TDI) |
| 引脚 2 | IN- — Differential input negative (TDI) |
| 引脚 3 | GND — Ground reference for input stage |
| 引脚 4 | VCC — Driver supply voltage |
| 引脚 5 | NC — Not connected (per datasheet) |
| 引脚 6 | OUT — Gate drive output to GaN HEMT or MOSFET |
| 引脚 7 | NC — Not connected (per datasheet) |
| 引脚 8 | NC — Not connected (per datasheet) |
| 引脚 9 | NC — Not connected (per datasheet) |
| 引脚 10 | EP — Exposed pad / thermal pad - solder to PCB |
典型应用
1EDN7126GXTMA1 适用于 6 应用s: High-Density DC-DC Converters, Telecom 48 V Point-of-Load, Server and Data-Center Power Delivery, Motor-Drive Auxiliary Rails, Totem-Pole PFC Power Stages, LLC and Resonant Converters.
High-Density DC-DC Converters
The 1EDN7126GXTMA1 is well matched to 48 V to point-of-load buck and buck-boost converters using 100 V GaN HEMTs. The 1.5 A peak drive strength switches the gate in < 5 ns, which directly shrinks switching loss and lets designers push frequency above 1 MHz for smaller magnetics. Its 200 V CMR allows the high-side switch to be driven safely in a half-bridge GaN stage, where conventional low-side drivers would false-trigger on the large dV/dt seen at the source node.
推荐
Telecom 48 V Point-of-Load
In telecom 48 V rails feeding downstream POL converters, the 1EDN7126GXTMA1 drives GaN HEMTs at the primary side while its small PG-VSON-10-4 footprint allows tight placement near the switch. The truly differential input stage rejects common-mode noise injected by parallel high-current traces on the backplane, avoiding false turn-on during load transients. Compared with bootstrap low-side drivers, the 1EDN7126GXTMA1's 200 V CMR margin handles the source swing of high-side GaN in half-bridge configurations used in isolated bus converters.
推荐
Server and Data-Center Power Delivery
For server and data-center bricks such as 48 V to 12 V or 12 V to 1 V stages, the 1EDN7126GXTMA1 enables MHz-class switching that shrinks magnetic volume and improves transient response. The 1.5 A drive current keeps gate-drive loss well below 1 percent of total stage loss, and the differential input lets the controller sit on a separate ground domain for cleaner housekeeping signals. The PG-VSON-10-4 footprint also helps keep the high-current loop short, which is critical for EMI in dense multi-phase server designs.
推荐
Motor-Drive Auxiliary Rails
Industrial motor drives use the 1EDN7126GXTMA1 to drive GaN-based auxiliary rails such as gate-driver supplies, housekeeping converters, and isolated sensor rails. The 200 V CMR tolerance allows reliable high-side drive even when the motor inverter creates large common-mode transients on the same PCB. With 1.5 A drive capability the part supports GaN switches up to 200 V rated, fitting low-voltage three-phase servo and BLDC drive subsystems.
推荐
Totem-Pole PFC Power Stages
In bridgeless totem-pole PFC stages using 650 V GaN HEMTs, the 1EDN7126GXTMA1 drives the high-side arm where common-mode dV/dt can exceed 100 kV/us. The TDI architecture eliminates the need for a digital isolator on the high-side drive path, simplifying BOM and shrinking PCB area. With matched propagation delays below 10 ns, the 1EDN7126GXTMA1 minimizes dead-time and the resulting reverse-recovery penalty on the slow leg during AC line cycles.
推荐
LLC and Resonant Converters
Resonant LLC converters for EV onboard chargers, LED drivers, and welding inverters benefit from the 1EDN7126GXTMA1's narrow timing skew and 1.5 A peak drive. The differential input preserves signal integrity in the noisy environment created by the resonant tank, where reflected dV/dt easily reaches 50 V/ns. The 10-pin PG-VSON-10-4 package simplifies the high-side / low-side layout symmetry, reducing parasitic mismatch that would otherwise degrade LLC efficiency.
推荐
推荐产品汇总
工程参考数据： 1EDN7126GXTMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 1EDN7146GXTMA1 | 1EDN7550BXTSA1 | 1EDN7511BXUSA1 | 1EDN8550BXUSA1 | 1ED44173N01BXTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-10-4 | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same |
| Channel Count | 1 | 1 | 1 | 1 | 1 | 1 |
| Peak Source / Sink Current | 1.5 A / 1.5 A | 1.5 A / 1.5 A | 0.5 A / 0.5 A | 1.0 A / 1.0 A | 1.5 A / 1.5 A | 1.5 A / 1.5 A |
| Common-Mode Voltage (CMR) | 200 V | 200 V | 100 V | 100 V | 300 V | 200 V |
| Input Type | TDI (Truly Differential) | TDI | Single-ended | TDI | Isolated TDI | Isolated TDI |
| Polarity | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Truly differential input stage eliminates false triggering in high-side GaN drive （对比 1EDN7550BXTSA1)
- Higher peak drive current than the lower-cost 75x0 family members （对比 1EDN7511BXUSA1)
- Higher CMR margin than the 1EDN75xx family （对比 1EDN7550BXTSA1)
设计说明
Place the 1EDN7126GXTMA1 within 5 mm of the GaN HEMT gate pad to minimize gate-loop inductance. Use a Kelvin-source connection directly back to the driver's GND pin, never to the power-stage ground plane, to avoid ground-bounce coupling that would otherwise corrupt the differential input.
Add a small series gate resistor (typically 1 to 5 ohm) between OUT and the GaN gate to damp ringing from the LC tank formed by package inductance and gate capacitance. Place a 100 nF X7R bypass capacitor directly at the VCC pin with the shortest possible return path to GND to keep the driver rail stiff during 1.5 A peak transients.
Do not operate the 1EDN7126GXTMA1 below the minimum supply-voltage threshold or with a noisy bootstrap diode - both lead to under-driven GaN switches and shoot-through. Verify the differential inputs are biased within the common-mode range of the GaN source swing; otherwise the TDI stage can saturate and the output becomes undefined.
When the controller and driver sit on different ground domains (common in isolated converters), keep the differential pair from IN+ to IN- tightly coupled and length-matched. Route them on an inner PCB layer over a continuous ground plane to reject the common-mode transients injected by adjacent high-current switching loops.
合规信息
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive GaN drive refer to Infineon's automotive-grade EiceDRIVER catalog.
