1EDN7146GXTMA1 vs 1EDN7126GXTMA1 对比
详细并排对比 1EDN7146GXTMA1 出自 Infineon 和 1EDN7126GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7146GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.29 |
| Driver Type | High-side, single-channel | — |
| Number of Drivers | 1 | — |
| Logic Type | Non-Inverting | — |
| Input Type | TDI (Truly Differential Inductor) | Truly Differential Input (TDI) |
| Maximum Bootstrap Voltage (VB) | 200 V | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | — |
| Source/Sink Drive Current | 500 mA / 500 mA | — |
| Gate Drive Voltage | Up to 11 V (typ) | — |
| Propagation Delay (typ) | 40 ns | — |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| UVLO (VCC) | Yes | — |
| UVLO (VB) | Yes | — |
| Bootstrap Diode | Integrated | — |
| 工作温度 | -40 C to +125 C | — |
| 封装 | PG-VSON-10-4 | PG-VSON-10-4 |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| 功能 | — | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | — | Non-Inverting |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Peak Source Current | — | 1.5 A |
| Peak Sink Current | — | 1.5 A |
| Common-Mode Voltage (CMR) | — | 200 V |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| 工作温度范围 | — | -40C to +125C |
| Reach | — | Compliant |
| Lead-Free | — | Yes |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |