1EDN8511BXUSA1 vs 2EDN7534FXTMA1 对比

详细并排对比 1EDN8511BXUSA1 出自 Infineon 和 2EDN7534FXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN8511BXUSA1 1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 ✓ 量产中

规格对比

参数 1EDN8511BXUSA1 2EDN7534FXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.71
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
工作结温 -40 °C to +150 °C —
封装 PG-SOT23-6-2 PG-DSO-8
安装类型 Surface Mount Surface Mount
引脚数量 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] —
Driver Type — Low-Side, Dual Channel
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Supply Voltage (VDD) — 4.5 V to 20 V
Input Voltage Range (logic pins) — -12 V to +22 V (absolute max)
Propagation Delay (typical) — 19 ns
Input Logic Compatibility — LV-TTL
Output Polarity — Non-Inverting
Output Voltage Clamping — Active, to VDD
Rise Time (typ.) — [DATA_NEEDED: rise time]
Fall Time (typ.) — [DATA_NEEDED: fall time]
Channel-to-Channel Skew — [DATA_NEEDED: channel skew]
Under-Voltage Lockout — Yes
使能引脚 — Yes
工作温度 — -40C to +125C

数据手册与资源

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