2ED3140MC12LXUMA1 vs 1ED020I12B2XUMA1 对比

详细并排对比 2ED3140MC12LXUMA1 出自 Infineon 和 1ED020I12B2XUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED3140MC12LXUMA1 2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 ✓ 量产中

规格对比

参数 2ED3140MC12LXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.38 $2.65
Product Type Isolated Gate Driver —
拓扑 Dual-channel, half-bridge capable —
Number of Channels 2 1
Peak Source Current 6 A —
Peak Sink Current 6.5 A —
Isolation Voltage (Vrms) 5700 Vrms 4500 Vrms
Isolation Technology Capacitive coupling (coreless transformer) Coreless transformer (magnetic coupling)
UVLO Threshold 8.5 V —
Supported Switches IGBT, MOSFET, SiC MOSFET up to 2300 V —
Dead-Time Control Integrated, resistor-programmable —
封装 PG-DSO-14-71 (DSO-14 wide-body, 300 mil) PG-DSO-16-15 (300 mil wide-body DSO-16)
工作温度范围 [DATA_NEEDED: operating temperature] —
Propagation Delay [DATA_NEEDED: propagation delay] —
Creepage Distance >8 mm (per package) 8 mm
Safety Certification UL 1577 recognized —
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes / Compliant —
Channel Configuration Independent or half-bridge —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
工作温度 — -40 °C to +125 °C
MSL 等级 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

数据手册与资源

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