2ED3140MC12LXUMA1 vs 1ED020I12B2XUMA1 비교

다음의 상세 나란히 비교: 2ED3140MC12LXUMA1 제조: Infineon 및 1ED020I12B2XUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
2ED3140MC12LXUMA1 2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 ✓ 활성

사양 비교

파라미터 2ED3140MC12LXUMA1 1ED020I12B2XUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.38 $2.65
Product Type Isolated Gate Driver —
토폴로지 Dual-channel, half-bridge capable —
Number of Channels 2 1
Peak Source Current 6 A —
Peak Sink Current 6.5 A —
Isolation Voltage (Vrms) 5700 Vrms 4500 Vrms
Isolation Technology Capacitive coupling (coreless transformer) Coreless transformer (magnetic coupling)
UVLO Threshold 8.5 V —
Supported Switches IGBT, MOSFET, SiC MOSFET up to 2300 V —
Dead-Time Control Integrated, resistor-programmable —
패키지 PG-DSO-14-71 (DSO-14 wide-body, 300 mil) PG-DSO-16-15 (300 mil wide-body DSO-16)
동작 온도 범위 [DATA_NEEDED: operating temperature] —
Propagation Delay [DATA_NEEDED: propagation delay] —
Creepage Distance >8 mm (per package) 8 mm
Safety Certification UL 1577 recognized —
실장 유형 Surface Mount Surface Mount
Lead-Free / RoHS Yes / Compliant —
Channel Configuration Independent or half-bridge —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
동작 온도 — -40 °C to +125 °C
MSL 레벨 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청