2EDN7434RXTMA1 vs 1EDN7136UXTSA1 对比

详细并排对比 2EDN7434RXTMA1 出自 Infineon 和 1EDN7136UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDN7434RXTMA1 2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 ✓ 量产中

规格对比

参数 2EDN7434RXTMA1 1EDN7136UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.34 $0.74
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
封装 PG-TSSOP-8 (3.0 x 3.0 mm) TSNP-6 with exposed pad (PG-VSON-1)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: operating temperature] -40 C to +150 C
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Active Output Voltage Clamping Yes —
功能 — High-side / Low-side gate driver IC
Driven Device Type — GaN HEMT, N-channel MOSFET
输出数量 — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
Lead-Free — Yes
无卤 — Yes (per Infineon product family convention)

数据手册与资源

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