2EDN7533RXTMA1 vs 1ED3127MU12FXUMA1 对比

详细并排对比 2EDN7533RXTMA1 出自 Infineon 和 1ED3127MU12FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDN7533RXTMA1 2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 ✓ 量产中
Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 量产中

规格对比

参数 2EDN7533RXTMA1 1ED3127MU12FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.74
功能 Dual-channel low-side gate driver Single-channel isolated gate driver
Number of Channels 2 —
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns 15 ns
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V —
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
工作结温 -40 C to +150 C —
封装 PG-TSSOP-8 (HTSSOP) with exposed pad PG-DSO-8-72 (SOIC-8 wide-body)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
输出数量 — 1
输出配置 — High-side / Low-side, Inverting / Non-Inverting
Peak Output Current — 10 A (source/sink)
Continuous Output Current — 9 A
Supply Voltage (VCC2 secondary) — 12 V to 35 V
Supply Voltage (VCC1 primary) — 3 V to 5.5 V
Delay Matching (typ.) — 30 ns
Galvanic Isolation — 3000 Vrms (coreless transformer)
工作温度范围 — -40C to +125C
Protection Features — Miller clamp, UVLO, DESAT short-circuit protection
Drives — IGBT, MOSFET, SiC MOSFET

数据手册与资源

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