2SK170-BL vs LSK170A 对比

详细并排对比 2SK170-BL 出自 Toshiba 和 LSK170A 出自 Linear Integrated Systems。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Linear Integrated Systems
LSK170A LSK170A - Low Noise N-Channel JFET, 40V | Linear Systems

LSK170A - Low Noise N-Channel JFET, 40V | Linear Systems

LSK170A ✓ 量产中

规格对比

参数 2SK170-BL LSK170A
品牌 Toshiba Linear Integrated Systems
分类 Transistors Transistors
生命周期状态 停产 有效
库存状态 有库存 有库存
单价(USD) $2.10 $0.94
晶体管类型 N-Channel JFET (Junction FET) —
Technology Silicon N-Channel Junction Type —
Primary Application Low Noise Audio Amplifier —
Drain Current Rating 12 mA —
Drain-Source Voltage 40 V —
Grade / Idss Rank BL (highest Idss grade of 2SK170 family) —
Gate-Source Voltage Rating [DATA_NEEDED: gate-source voltage rating] —
Idss Range (BL grade) [DATA_NEEDED: Idss range for BL grade] —
Noise Figure [DATA_NEEDED: noise figure] —
Transconductance [DATA_NEEDED: forward transfer admittance] —
Power Dissipation [DATA_NEEDED: total power dissipation] —
封装 TO-92, 3-pin SOT-23-3 (3L), surface mount
安装类型 Through-Hole Surface Mount
Polarity N-Channel —
Configuration Single JFET Single
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
RoHS 状态 [DATA_NEEDED: RoHS status] RoHS Compliant
Device Type — N-Channel JFET Amplifier
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: Gate-Source Voltage]
Continuous Drain Current (ID) — 10 mA
Power Dissipation (PD) — 400 mW
IDSS Range (Grade A) — 2.6 mA to 6.5 mA (VDS = 10 V)
Noise Performance — Ultra-low noise (audio-grade)
输入电容 — Low capacitance
Input Impedance — High input impedance
Transfer Characteristic — Uniquely linear VGS transfer function
Replacement For — Toshiba 2SK170 (pin-for-pin)
Grade Options — A / B / C / D (IDSS bins)

数据手册与资源

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