2SK170-BL vs LSK170A 비교
다음의 상세 나란히 비교: 2SK170-BL 제조: Toshiba 및 LSK170A 제조: Linear Integrated Systems. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2SK170-BL | LSK170A |
|---|---|---|
| 브랜드 | Toshiba | Linear Integrated Systems |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 수명 종료 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.10 | $0.94 |
| 트랜지스터 유형 | N-Channel JFET (Junction FET) | — |
| Technology | Silicon N-Channel Junction Type | — |
| Primary Application | Low Noise Audio Amplifier | — |
| Drain Current Rating | 12 mA | — |
| Drain-Source Voltage | 40 V | — |
| Grade / Idss Rank | BL (highest Idss grade of 2SK170 family) | — |
| Gate-Source Voltage Rating | [DATA_NEEDED: gate-source voltage rating] | — |
| Idss Range (BL grade) | [DATA_NEEDED: Idss range for BL grade] | — |
| Noise Figure | [DATA_NEEDED: noise figure] | — |
| Transconductance | [DATA_NEEDED: forward transfer admittance] | — |
| Power Dissipation | [DATA_NEEDED: total power dissipation] | — |
| 패키지 | TO-92, 3-pin | SOT-23-3 (3L), surface mount |
| 실장 유형 | Through-Hole | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single JFET | Single |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | RoHS Compliant |
| Device Type | — | N-Channel JFET Amplifier |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: Gate-Source Voltage] |
| Continuous Drain Current (ID) | — | 10 mA |
| Power Dissipation (PD) | — | 400 mW |
| IDSS Range (Grade A) | — | 2.6 mA to 6.5 mA (VDS = 10 V) |
| Noise Performance | — | Ultra-low noise (audio-grade) |
| 입력 커패시턴스 | — | Low capacitance |
| Input Impedance | — | High input impedance |
| Transfer Characteristic | — | Uniquely linear VGS transfer function |
| Replacement For | — | Toshiba 2SK170 (pin-for-pin) |
| Grade Options | — | A / B / C / D (IDSS bins) |