AFT26H050W26SR3 vs AFT26HW050GSR3 对比

详细并排对比 AFT26H050W26SR3 出自 NXP Semiconductors 和 AFT26HW050GSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
AFT26H050W26SR3 AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP

AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP

AFT26H050W26SR3 Obsolete
NXP Semiconductors
AFT26HW050GSR3 AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP

AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP

AFT26HW050GSR3 ✓ 量产中

规格对比

参数 AFT26H050W26SR3 AFT26HW050GSR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $23.95 $51.20
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors
晶体管类型 N-Channel LDMOS, Enhancement Mode —
Frequency Range 2.496 GHz to 2.69 GHz —
Average Output Power 9 W —
Test Voltage 28 V —
Test Current 100 mA —
Power Gain 14.2 dB —
Maximum Drain-Source Voltage 65 V 65 V
Maximum Operating Temperature 150 °C —
Peak Reflow Temperature 260 °C —
Configuration Single, Asymmetrical Doherty Single transistor, internally input-matched
Number of Elements 1 —
Technology Metal-Oxide Semiconductor (LDMOS) LDMOS (Laterally Diffused MOS), Airfast gen
封装 NI-780S-4L4L-8 (ceramic, overmolded) —
Channel Type N-Channel —
安装类型 Surface Mount / chassis-mount screw flange Chassis Mount (bolt-down, flange)
Supplier Device Package NI-780S-4L4L-8 —
Part Number — AFT26HW050GSR3
Device Type — RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode
Family — Airfast RF Power
封装 / 外壳 — NI-780GS-4L4L (9-pin, ceramic)
Operating Frequency — 2496 MHz to 2690 MHz
Typical Drain-Source Voltage (Vds) — 28 V
Output Power (P1dB / Avg) — 9 W average (Doherty)
Power Gain (Gp) — 14.2 dB at 2.69 GHz
Test Condition Gain — 14.2 dB @ 2.69 GHz
Test Condition Frequency — 2.496 GHz to 2.69 GHz
Quiescent Current (Iq) — 100 mA
Architecture — Asymmetric Doherty (paired carrier/peaking)
RoHS 状态 — Compliant
REACH Status — Compliant
工作温度 — -40 C to +150 C

数据手册与资源

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