AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
料号： AFT26H050W26SR3 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 100 | $29.75 | $2,975.00 |
| 500 | $26.4 | $13,200.00 |
| 1,000 | $23.95 | $23,950.00 |
AFT26H050W26SR3 概述
An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor power device specifically optimized for RF signal amplification, combining high breakdown voltage with high transition frequency. It belongs to the power transistor hierarchy (RF transistor -> power transistor -> discrete semiconductor) and is the de facto standard active device for high-power base-station transmitters due to its high gain, wide bandwidth, and thermal robustness in compact ceramic packages.
Key differentiating features include NXP's Airfast asymmetric Doherty architecture optimized for wide instantaneous bandwidth, integrated ESD protection, and a single-ended input configuration. The NI-780S package provides a low thermal resistance path from the silicon die to the system heatsink, enabling reliable CW and pulsed operation at full rated power. The 2.5-2.7 GHz band covers international LTE-TDD Band 38, Band 41, and WiMAX-style allocations, allowing one transistor to serve multiple regional deployments.
Technically, the device uses a laterally diffused N-channel silicon MOSFET die built on a high-resistivity substrate, with a metal-oxide gate stack tuned for high drain efficiency in Class AB/C bias. The asymmetric Doherty topology pairs a main amplifier biased Class AB with a peaking amplifier biased Class C, producing 9 W average output while maintaining back-off efficiency for high-PAPR OFDM and LTE signals.
Typical applications include 4G LTE base-station driver and final PA stages, small-cell and macro-cell transmitter outputs, and TDD transceiver power blocks rated at 9 W average. The device is also found in correction amplifier paths for DPD-equipped radios and in defense/civilian RF links operating in the 2.5-2.7 GHz band.
When designing with this part, ensure the source impedance on the input side is matched to the device test-fixture tuning, since any deviation shifts both gain and efficiency. Use a forced-air or liquid-cooled heatsink, keep leads short for thermal relief, and decouple the gate bias supply with a low-ESR tantalum or ceramic capacitor placed within 5 mm of the bias pin.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, including cross-references and selection guidance between pin-compatible NXP Airfast variants.
直接替换替代料： AFT26H050W26SR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： AFT26H050W26SR3 （相同外形与封装尺寸） ——差异在于 Mounting Type, Manufacturer, Configuration, Device Type, Frequency Range.
快速对比工具——选择替代料号进行并排对比：
AFT26HW050SR3
✅ 直接替换✓ 有现货
$47.74 / 个
查看数据手册 →AFT26HW050GSR3
✅ 直接替换✓ 有现货
$51.2 / 个
查看数据手册 →AFT26H050W26GSR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
AFT27S010N
✅ 直接替换📋 参考替代料（不在目录中）
AFT18S290W26SR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
AFT26H050W26SR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| 晶体管类型 | N-Channel LDMOS, Enhancement Mode |
| Frequency Range | 2.496 GHz to 2.69 GHz |
| Average Output Power | 9 W |
| Test Voltage | 28 V |
| Test Current | 100 mA |
| Power Gain | 14.2 dB |
| Maximum Drain-Source Voltage | 65 V |
| Maximum Operating Temperature | 150 °C |
| Peak Reflow Temperature | 260 °C |
| Configuration | Single, Asymmetrical Doherty |
| Number of Elements | 1 |
| Technology | Metal-Oxide Semiconductor (LDMOS) |
| 封装 | NI-780S-4L4L-8 (ceramic, overmolded) |
| Channel Type | N-Channel |
| 安装类型 | Surface Mount / chassis-mount screw flange |
| Supplier Device Package | NI-780S-4L4L-8 |
AFT26H050W26SR3 引脚配置
| 引脚 1 | GATE_IN — RF input to gate of LDMOS; 50 Ω nominal |
| 引脚 2 | GATE_BIAS — DC gate bias supply connection |
| 引脚 3 | DRAIN_OUT — RF output at drain; 50 Ω nominal |
| 引脚 4 | DRAIN_BIAS — Main 28 V DC drain supply |
| 引脚 5 | SOURCE — Source / flange ground - also thermal interface |
| 引脚 6 | NC — Not connected (per datasheet, lead-frame pin) |
| 引脚 7 | NC — Not connected (per datasheet, lead-frame pin) |
| 引脚 8 | NC — Not connected (per datasheet, lead-frame pin) |
安全工作区 (CW, Tj=150C)
典型应用
AFT26H050W26SR3 适用于 6 应用s: 4G LTE-TDD Base-Station Final PA, Small-Cell / Micro-Cell Power Amplifier, Driver Stage for Higher-Power Doherty PAs, TDD Transceiver Power Block, Correction Amplifier for DPD-Equipped Radios, Defense / Civilian Broadband RF Link.
4G LTE-TDD Base-Station Final PA
The AFT26H050W26SR3 is purpose-built for the output stage of LTE-TDD base-station radios operating at Band 38 (2570-2620 MHz) and Band 41 (2496-2690 MHz). Its 9 W average output with 14.2 dB gain, biased at 28 V and 100 mA quiescent, sits comfortably under the rugged 65 V drain breakdown rating and supports digital predistortion loops while running Class AB for the main and Class C for the peaking side of the asymmetric Doherty. The device's wide instantaneous bandwidth 2496-2690 MHz enables one PCB to cover both FDD-LTE uplink economics and TDD-LTE downlink PA markets. Designers typically place it on a copper-clad aluminum heat spreader and route the input network through a 50 Ω microstrip with series and shunt stabilization.
推荐
Small-Cell / Micro-Cell Power Amplifier
In small-cell and micro-cell deployments where the average per-antenna output is in the single-digit-watt range, the AFT26H050W26SR3 acts as the final PA delivering the 9 W average power envelope required for two-by-two MIMO 4G sectors. Its symmetrical Doherty efficiency at 8 dB back-off is sufficient to meet AC and DC-power targets in pole-mount and strand-mount small cells. The 28 V bias rail integrates with standard Power-over-Ethernet-plus DC-DC converters; thermal relief is straightforward because the NI-780S-4L4L-8 ceramic flange can be clamped to a small aluminum spreader without exotic cooling.
推荐
Driver Stage for Higher-Power Doherty PAs
When paired with NXP Airfast higher-power final devices such as the AFT27S series, the AFT26H050W26SR3 functions as a perfectly sized driver stage running at 9 W output to saturate the following stage without exceeding its input compression point. Its 14.2 dB gain provides ample headroom for the driver/main loss budget, and the 28 V rail aligns with the system's primary PA supply, allowing single-rail bias design. This positioning keeps the gain distribution even, reduces loop instability, and protects downstream devices from overpower stress at the edge of band.
推荐
TDD Transceiver Power Block
The AFT26H050W26SR3 fits inside TDD RF transceiver power blocks where instantaneous bandwidth 2496-2690 MHz is mandatory and the unit's main PA must produce 9 W average while maintaining crest-factor gain linearity. The ceramic NI-780S package provides low ground inductance necessary for stable Doherty performance; combined with the part's 65 V breakdown and 150 °C maximum junction rating, it survives VSWR-induced ringing typical of TDD transmit/receive switching. Peripheral matching networks usually comprise a 2-section microstrip transformer to set the load-line back to 50 Ω.
推荐
Correction Amplifier for DPD-Equipped Radios
Many modern macro-cell radios use a low-power linearization correction amplifier driven by DPD feedback loops. The AFT26H050W26SR3's combination of 14.2 dB small-signal gain, flat gain-versus-frequency response over 2496-2690 MHz, and modest memory effects makes it well-suited as a correction/auxiliary amplifier that re-injects distortion-cancellation signals into the PA chain. When biased at 28 V and 100 mA quiescent, its linearity tracks the main PA thermal envelope, maintaining loop closure across temperature.
推荐
Defense / Civilian Broadband RF Link
Outside commercial cellular, the AFT26H050W26SR3 is deployed in defense and broadband fixed-wireless access links operating in the 2.5 GHz to 2.7 GHz band for line-of-sight radios. Its rugged 65 V breakdown and 150 °C junction temperature allow operation at the environmental extremes demanded by MIL-spec shelter and fixed-wireless installations. Designers value its single-ended input and output topology for simple filtering, plus the NI-780S-4L4L-8 flange for direct screw-down mounting onto a weatherproof heatsink chassis.
推荐
推荐产品汇总
工程参考数据： AFT26H050W26SR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | AFT26HW050SR3 | AFT26HW050GSR3 | AFT26H050W26GSR3 | AFT27S010N | AFT18S290W26SR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4L4L-8 | NI-780-4L4L | NI-780-4L4L | NI-780S-4L4L-8 - same | NI-780 family - same mounting footprint | NI-780S-4L4L-8 family - same |
| Frequency Range | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 1805-1880 MHz (different band) |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain Breakdown | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Configuration | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Active (verify w/ NXP) | Obsolete |
关键差异点
- Asymmetric Doherty-optimized die （对比 Symmetric Doherty competitors in the same band)
- Wide instantaneous bandwidth 194 MHz （对比 Narrowband 2.6 GHz competitors)
- Integrated ESD protection on the gate （对比 Discrete N-channel LDMOS designs without internal ESD)
- 65 V drain breakdown vs 50 V typical （对比 Lower-Vds GaAs and LDMOS contemporaries)
设计说明
At 9 W average output and 28 V bias the AFT26H050W26SR3 dissipates roughly 25-30 W internally when biased for Doherty operation; the NI-780S-4L4L-8 ceramic flange must be screwed down to a copper-spreader heatsink with thermal compound, keeping the flange-to-heatsink resistance below 0.5 °C/W. Forced-air cooling (~2 m/s) is strongly recommended because natural convection alone will trip thermal shutdown near full power.
Source leads of an LDMOS power device are also the RF ground reference, so a continuous low-inductance bond from the NI-780S flange through the PCB ground plane to the gate/drain matching networks is mandatory. Use multiple ground vias around the package mounting holes and keep gate-source stability capacitor traces shorter than 5 mm to avoid oscillation above 1 GHz.
Do not exceed 65 V on the drain under any DC or transient condition - a TVS diode (e.g. 62 V SMBJ) close to the drain lead is recommended. Also ensure the gate bias is applied before the drain supply; bias sequencing prevents oxide stress. Estimated: gate-oxide breakdown is typically +/-20 V, so use a soft-start circuit to limit inrush current.
Place the input matching network and the inter-stage stabilization components as close as possible to the gate lead. Use RO4350B or RO4003C substrate for the matching circuitry because their dielectric constant (~3.48) is stable across temperature and enables repeatable Doherty load-pull results.
Avoid sharp 90° bends in the gate and drain traces; instead use mitered bends (45° angles) to keep characteristic impedance near 50 Ω at 2.6 GHz. Quarter-wave transformer sections must be field-verified with a VNA, since even 1 mm of additional trace length adds ~3° of phase shift at these frequencies.
合规信息
NXP Airfast packaging is Pb-free per industry-standard lead-finish specifications; AEC-Q100 not applicable as this is a base-station / non-automotive component.
