AFT26HW050GSR3 vs AFT26H050W26SR3 对比

详细并排对比 AFT26HW050GSR3 出自 NXP Semiconductors 和 AFT26H050W26SR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
AFT26HW050GSR3 AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP

AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP

AFT26HW050GSR3 ✓ 量产中
NXP Semiconductors
AFT26H050W26SR3 AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP

AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP

AFT26H050W26SR3 Obsolete

规格对比

参数 AFT26HW050GSR3 AFT26H050W26SR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $51.20 $23.95
Part Number AFT26HW050GSR3 —
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Device Type RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode —
Family Airfast RF Power —
封装 / 外壳 NI-780GS-4L4L (9-pin, ceramic) —
安装类型 Chassis Mount (bolt-down, flange) Surface Mount / chassis-mount screw flange
Operating Frequency 2496 MHz to 2690 MHz —
Typical Drain-Source Voltage (Vds) 28 V —
Maximum Drain-Source Voltage 65 V 65 V
Output Power (P1dB / Avg) 9 W average (Doherty) —
Power Gain (Gp) 14.2 dB at 2.69 GHz —
Test Condition Gain 14.2 dB @ 2.69 GHz —
Test Condition Frequency 2.496 GHz to 2.69 GHz —
Quiescent Current (Iq) 100 mA —
Configuration Single transistor, internally input-matched Single, Asymmetrical Doherty
Architecture Asymmetric Doherty (paired carrier/peaking) —
Technology LDMOS (Laterally Diffused MOS), Airfast gen Metal-Oxide Semiconductor (LDMOS)
RoHS 状态 Compliant —
REACH Status Compliant —
工作温度 -40 C to +150 C —
晶体管类型 — N-Channel LDMOS, Enhancement Mode
Frequency Range — 2.496 GHz to 2.69 GHz
Average Output Power — 9 W
Test Voltage — 28 V
Test Current — 100 mA
Power Gain — 14.2 dB
Maximum Operating Temperature — 150 °C
Peak Reflow Temperature — 260 °C
Number of Elements — 1
封装 — NI-780S-4L4L-8 (ceramic, overmolded)
Channel Type — N-Channel
Supplier Device Package — NI-780S-4L4L-8

数据手册与资源

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