AT45DB041E-SHN2B-T vs AT25DF081A-SH-B 对比
详细并排对比 AT45DB041E-SHN2B-T 出自 Renesas Electronics 和 AT25DF081A-SH-B 出自 Renesas Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Renesas Electronics
AT45DB041E-SHN2B-T - 4Mbit 1.65V SPI DataFlash 85MHz | Renesas
AT45DB041E-SHN2B-T ✓ 量产中
规格对比
| 参数 | AT45DB041E-SHN2B-T | AT25DF081A-SH-B |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.58 |
| 存储器类型 | NOR Flash (DataFlash, SPI) | Serial NOR Flash |
| 存储容量 | 4 Mbit (512K x 8) plus 128 kbits extra | — |
| 存储组织 | 2048 pages x 256 bytes (or 2112 x 264 bytes) | — |
| Supply Voltage (VCC) | 1.65 V to 3.6 V | 2.7 V to 3.6 V |
| 接口类型 | SPI (3-wire: SI, SO, SCK + CS) | — |
| 最大时钟频率 | 85 MHz | 100 MHz |
| Page Size | 256 bytes (or 264 bytes binary page mode) | — |
| SRAM Buffer | Dual, 256/264 bytes | — |
| 工作温度 | -40C to +85C (industrial) | -40C to +85C |
| 封装 | 8-SOIC (EIAJ 208mil, 5.23 mm body width) | 8-SOIC (SOIC-W, 208 mil) |
| 安装类型 | Surface Mount | — |
| Packaging | Tape & Reel | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| RoHS 状态 | Compliant | Compliant |
| Sector Erase Size | 64 KB (4 KB block, 256-byte page erase) | — |
| Standby Current | [DATA_NEEDED: deep power-down typical value] | — |
| Memory Density | — | 8 Mbit (1 Mbyte) |
| Memory Organization | — | 4K x 256 bytes |
| 接口 | — | SPI (Single/Dual), Mode 0 and Mode 3 |
| Sector / Block Erase Sizes | — | 4 KB / 32 KB / 64 KB uniform |
| Page Program Size | — | 1 to 256 bytes |
| Endurance | — | 100,000 erase/program cycles per sector |
| Data Retention | — | >20 years |
| Security Registers | — | Three 256-byte Security Register pages |
| SFDP Support | — | Yes (JEDEC 216 standard) |
| Write Protection | — | Hardware WP pin plus BP0-BP2 status-register bits |