ATSAMG55J19B-AUT vs ATSAMG55J19A-AU 对比

详细并排对比 ATSAMG55J19B-AUT 出自 Microchip Technology 和 ATSAMG55J19A-AU 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Microchip Technology
ATSAMG55J19B-AUT ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT ✓ 量产中
Microchip Technology
ATSAMG55J19A-AU ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU ✓ 量产中

规格对比

参数 ATSAMG55J19B-AUT ATSAMG55J19A-AU
品牌 Microchip Technology Microchip Technology
分类 Microcontrollers Microcontrollers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.42 $3.99
Core Architecture ARM Cortex-M4 with single-precision FPU ARM Cortex-M4 with FPU
最大时钟频率 120 MHz —
Program Memory (Flash) 512 KB (512K x 8) —
SRAM 176 KB —
Operating Voltage Range 1.62 V to 3.6 V —
封装 64-pin LQFP (10x10 mm) 64-LQFP (10x10 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -40C to +85C (Industrial) —
数据总线宽度 32-bit —
Number of I/O Pins Up to 47 (per datasheet) —
USB Interface USB 2.0 Full-Speed Device/Host with on-chip PHY —
Audio Interface I2S (digital audio) I2S with PDM/TDM and sample-rate converter
ADC 12-bit, 16-channel (per datasheet) 12-bit SAR
Timers/PWM 16-bit timers, PWM channels (per datasheet) —
Communication Peripherals USART, SPI, TWI/I2C USART/UART, SPI, TWI (I2C), I2S, HS USB
DMA Peripheral DMA controller —
RoHS 状态 Compliant Compliant
Delivery Form Tape & Reel (AUT suffix) —
Series SAM G55 —
Silicon Revision B —
Core Clock Speed (max) — 120 MHz
Instruction Set — 32-bit RISC + DSP extensions + FPU (single-precision)
Program Flash Memory — 512 KB (512K x 8)
SRAM (Total) — 160 KB
Backup SRAM with Retention — 16 KB (retained in deep sleep)
Supply Voltage (VDDIO/VDDCORE) — 1.62 V to 3.6 V
工作温度 — -40 C to +85 C (industrial)
USB — USB 2.0 Full-Speed device/host
External Bus Interface (EBI) — Yes (for SRAM/SDRAM/NOR Flash expansion)
Active Power Consumption — Down to 100 uA/MHz
Deep Sleep Current — Below 7 uA with SRAM retention
Wake-up Time (deep sleep to first instruction) — Down to 3 us
Lifecycle / New Design Recommendation — Active (new designs: consider ATSAMG55J19B Revision B)

数据手册与资源

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