ATSAMG55J19B-AUT vs ATSAMG55J19A-AU 비교

다음의 상세 나란히 비교: ATSAMG55J19B-AUT 제조: Microchip Technology 및 ATSAMG55J19A-AU 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Microchip Technology
ATSAMG55J19B-AUT ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT ✓ 활성
Microchip Technology
ATSAMG55J19A-AU ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU ✓ 활성

사양 비교

파라미터 ATSAMG55J19B-AUT ATSAMG55J19A-AU
브랜드 Microchip Technology Microchip Technology
카테고리 Microcontrollers Microcontrollers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $5.42 $3.99
Core Architecture ARM Cortex-M4 with single-precision FPU ARM Cortex-M4 with FPU
최대 클록 주파수 120 MHz —
Program Memory (Flash) 512 KB (512K x 8) —
SRAM 176 KB —
Operating Voltage Range 1.62 V to 3.6 V —
패키지 64-pin LQFP (10x10 mm) 64-LQFP (10x10 mm)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -40C to +85C (Industrial) —
데이터 버스 폭 32-bit —
Number of I/O Pins Up to 47 (per datasheet) —
USB Interface USB 2.0 Full-Speed Device/Host with on-chip PHY —
Audio Interface I2S (digital audio) I2S with PDM/TDM and sample-rate converter
ADC 12-bit, 16-channel (per datasheet) 12-bit SAR
Timers/PWM 16-bit timers, PWM channels (per datasheet) —
Communication Peripherals USART, SPI, TWI/I2C USART/UART, SPI, TWI (I2C), I2S, HS USB
DMA Peripheral DMA controller —
RoHS 상태 Compliant Compliant
Delivery Form Tape & Reel (AUT suffix) —
Series SAM G55 —
Silicon Revision B —
Core Clock Speed (max) — 120 MHz
Instruction Set — 32-bit RISC + DSP extensions + FPU (single-precision)
Program Flash Memory — 512 KB (512K x 8)
SRAM (Total) — 160 KB
Backup SRAM with Retention — 16 KB (retained in deep sleep)
Supply Voltage (VDDIO/VDDCORE) — 1.62 V to 3.6 V
동작 온도 — -40 C to +85 C (industrial)
USB — USB 2.0 Full-Speed device/host
External Bus Interface (EBI) — Yes (for SRAM/SDRAM/NOR Flash expansion)
Active Power Consumption — Down to 100 uA/MHz
Deep Sleep Current — Below 7 uA with SRAM retention
Wake-up Time (deep sleep to first instruction) — Down to 3 us
Lifecycle / New Design Recommendation — Active (new designs: consider ATSAMG55J19B Revision B)

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