BAT43 vs BAT43-R0 对比

详细并排对比 BAT43 出自 STMicroelectronics 和 BAT43-R0 出自 Taiwan Semiconductor。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ 量产中
Taiwan Semiconductor
BAT43-R0 BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 ✓ 量产中

规格对比

参数 BAT43 BAT43-R0
品牌 STMicroelectronics Taiwan Semiconductor
分类 Diodes Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.08 $0.02
Device Type Small Signal Schottky Diode —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Forward Continuous Current (IF) 200 mA at Ta = 25 C —
Repetitive Peak Forward Current (IFRM) 500 mA (tp <= 1 s, delta <= 0.5) —
Non-Repetitive Surge Current (IFSM) 4 A (tp = 10 ms) —
功耗(Ptot) 200 mW at Tl = 65 C —
Technology Metal-to-silicon Schottky barrier —
ESD Protection Integrated guard ring against excessive voltage Fast guard ring against excessive voltage (ESD)
Forward Voltage [DATA_NEEDED: forward voltage at rated current] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current] —
封装 DO-35 (glass axial, through-hole) DO-35 axial glass (through hole)
安装类型 Through Hole Through Hole
Case Style Hermetically sealed glass body —
Configuration Single diode Single diode
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Diode Type — Small Signal Schottky Barrier
Average Forward Current (IF(AV)) — 200 mA
Maximum Forward Voltage (VF) — 1 V
Non-Repetitive Peak Forward Surge Current (IFSM) — 4 A
Power Dissipation — 200 mW
Junction Operating Temperature — -65C to +125C
Reverse Recovery — Fast switching (Schottky, majority carrier)
Forward Voltage Turn-On — Very low turn-on voltage
Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Packaging Type — [DATA_NEEDED: tape/reel or bulk option]

数据手册与资源

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