BAT43 vs BAT43-R0 비교
다음의 상세 나란히 비교: BAT43 제조: STMicroelectronics 및 BAT43-R0 제조: Taiwan Semiconductor. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BAT43 | BAT43-R0 |
|---|---|---|
| 브랜드 | STMicroelectronics | Taiwan Semiconductor |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.08 | $0.02 |
| Device Type | Small Signal Schottky Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Forward Continuous Current (IF) | 200 mA at Ta = 25 C | — |
| Repetitive Peak Forward Current (IFRM) | 500 mA (tp <= 1 s, delta <= 0.5) | — |
| Non-Repetitive Surge Current (IFSM) | 4 A (tp = 10 ms) | — |
| 전력 손실 (Ptot) | 200 mW at Tl = 65 C | — |
| Technology | Metal-to-silicon Schottky barrier | — |
| ESD Protection | Integrated guard ring against excessive voltage | Fast guard ring against excessive voltage (ESD) |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current] | — |
| 패키지 | DO-35 (glass axial, through-hole) | DO-35 axial glass (through hole) |
| 실장 유형 | Through Hole | Through Hole |
| Case Style | Hermetically sealed glass body | — |
| Configuration | Single diode | Single diode |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Diode Type | — | Small Signal Schottky Barrier |
| Average Forward Current (IF(AV)) | — | 200 mA |
| Maximum Forward Voltage (VF) | — | 1 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 4 A |
| Power Dissipation | — | 200 mW |
| Junction Operating Temperature | — | -65C to +125C |
| Reverse Recovery | — | Fast switching (Schottky, majority carrier) |
| Forward Voltage Turn-On | — | Very low turn-on voltage |
| Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | — | [DATA_NEEDED: tape/reel or bulk option] |