BSC011N03LSIATMA1 vs BSZ060NE2LSATMA1 对比
详细并排对比 BSC011N03LSIATMA1 出自 Infineon 和 BSZ060NE2LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC011N03LSIATMA1 | BSZ060NE2LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.32 | $0.27 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | 44 A |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| 工作结温 | -55 °C to +150 °C | — |
| 封装 | PG-TDSON-8-7 (Surface Mount) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant | Compliant |
| Part Number | — | BSZ060NE2LSATMA1 |
| Technology | — | OptiMOS™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) @ Ta=25C | — | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 6 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 26 W |
| 工作温度范围 | — | -55C to +150C |
| Shipping Packaging | — | Tape & Reel |