BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
料号： BSZ060NE2LSATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.46 | $46.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.32 | $320.00 |
| 5,000 | $0.27 | $1,350.00 |
BSZ060NE2LSATMA1 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the active switching element in synchronous buck converters, half-bridges, and load-switch circuits. It belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor device. Within the MOSFET family, N-channel enhancement-mode devices dominate low-voltage (<=40 V) synchronous rectification because their lower RDS(on) per unit silicon area enables higher current handling and lower conduction loss than equivalent P-channel parts.
Key features include Infineon's OptiMOS™ trench-gate process, which achieves industry-leading Figure of Merit (RDS(on) × Qg) for switching loss reduction, a logic-level compatible gate threshold typically supporting 4.5 V drive, and low thermal resistance through the exposed-die pad. The TSDSON-8-FL package provides an exposed lead frame that doubles as the drain connection and thermal dissipation path, allowing the device to dissipate up to 26 W when properly mounted on a PCB with adequate copper thermal vias.
The BSZ060NE2LSATMA1's combination of 25 V rating, sub-10 mΩ on-resistance, and small footprint makes it particularly suited for point-of-load converters in servers, notebook adapters, USB-PD power paths, and motor drive half-bridges. The OptiMOS™ technology family shares a common datasheet and pinout, allowing designers to scale to higher or lower RDS(on) variants without board rework.
When designing with this part, prioritize a 4-layer PCB with a thermal copper pour under the exposed pad; keep the gate-drive loop area minimal to limit ringing; and verify the SOA (Safe Operating Area) at the application's VDS, ID, and pulse-width combination. Compared with older TrenchFET or DMOS parts, this MOSFET reduces switching losses by approximately 30 percent at 25 V operation.
Typical applications for the BSZ060NE2LSATMA1 include synchronous buck converters in networking switches, battery management system (BMS) protection FETs, hot-swap controllers on server backplanes, USB Type-C PD load switches, and motor drive half-bridges in small fans and pumps. The combination of low RDS(on), small footprint, and 25 V rating makes it a strong fit wherever efficiency and board area both matter.
This page synthesizes distributor stock and pricing, pin-compatible drop-in alternatives from Infineon's OptiMOS™ family, and practical PCB layout notes not found in the manufacturer datasheet.
直接替换替代料： BSZ060NE2LSATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： BSZ060NE2LSATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Junction Temperature, RoHS Status, MSL Level.
快速对比工具——选择替代料号进行并排对比：
BSZ0501NS
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSZ0902NS
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSZ0901NS
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSC0501NS
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSZ040NE2LS
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSZ060NE2LSATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | 44 A |
| Pulsed Drain Current (IDM) | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm |
| Power Dissipation (Ta) | 2.1 W |
| Power Dissipation (Tc) | 26 W |
| 工作温度范围 | -55C to +150C |
| 封装 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| MSL 等级 | 1 |
| Shipping Packaging | Tape & Reel |
BSZ060NE2LSATMA1 引脚配置
| 引脚 1 | S — Source |
| 引脚 2 | S — Source |
| 引脚 3 | S — Source |
| 引脚 4 | G — Gate |
| 引脚 5 | S — Source |
| 引脚 6 | S — Source |
| 引脚 7 | S — Source |
| 引脚 8 | S — Source |
| 引脚 PAD | D — Drain (exposed thermal pad on bottom of package) |
安全工作区 (DC)
典型应用
BSZ060NE2LSATMA1 适用于 6 应用s: Synchronous Buck DC-DC Converter, USB Type-C PD Load Switch, Battery Protection / Hot-Swap Controller, Server / Networking Point-of-Load, Small Motor Drive Half-Bridge, LED Driver High-Side Switch.
Synchronous Buck DC-DC Converter
The BSZ060NE2LSATMA1 serves as the low-side synchronous rectification MOSFET in 12 V input / 1.0-3.3 V output buck converters for server POL rails and networking ASICs. Its 25 V VDS rating provides ample margin on 12 V nominal buses, and the 6 mOhm RDS(on) limits conduction loss to ~0.86 W at 12 A. Compared to older TrenchFET parts the OptiMOS trench cell reduces switching loss by ~30%, allowing higher switching frequencies (500 kHz-1 MHz) without efficiency penalty. Use a 10 V gate drive and keep the high-side/low-side gate-drive loop area minimal for clean switching.
推荐
USB Type-C PD Load Switch
The BSZ060NE2LSATMA1 fits USB-PD load-switch and VBUS path switching in Type-C connectors and downstream-facing ports. Its 25 V VDS comfortably covers 20 V PDO with derating margin; 6 mOhm RDS(on) keeps voltage drop under 30 mV at 5 A charging current, preserving tight cable-compensation budgets; and the PQFN 3.3 x 3.3 mm footprint fits inside Type-C connector housings. Drive the gate with a 10 V enhancement rail; the device's low gate charge (Qg typ ~30 nC from family datasheet) keeps driver losses minimal during fast PD role-swap transitions.
推荐
Battery Protection / Hot-Swap Controller
The BSZ060NE2LSATMA1 functions as a low-side battery protection or hot-swap control MOSFET in 1S-4S lithium-ion packs and 12 V server backplanes. Its 44 A pulsed IDM rating handles inrush events during hot-plug of capacitive loads; the 6 mOhm on-resistance limits steady-state dissipation; and the logic-level threshold allows direct GPIO drive from a battery management IC. For redundant hot-swap designs, parallel two BSZ060NE2LSATMA1 devices to halve RDS(on) and distribute thermal load across the PCB.
推荐
Server / Networking Point-of-Load
In server motherboard and networking switch point-of-load (POL) converters, the BSZ060NE2LSATMA1 provides the synchronous FET for 12 V input / 0.8-1.8 V core voltage rails powering CPUs, ASICs, and DDR memory. The 25 V rating and 44 A pulsed current capability handle load transients from <1 A to >20 A in microseconds, while the 6 mOhm RDS(on) keeps conduction loss under 1 W at 12 A continuous. The PQFN 3.3 x 3.3 mm exposed-pad package enables tight interleaved multi-phase layouts common in modern VRM designs.
推荐
Small Motor Drive Half-Bridge
The BSZ060NE2LSATMA1 is suitable for low-voltage brushed DC and small BLDC/PMSM motor half-bridges in fans, pumps, and small appliances operating from 12-19 V supplies. The 44 A pulsed rating supports motor stall current for tens of milliseconds, and the 25 V VDS tolerates inductive flyback within the 19 V supply plus margin. Use paired N-channel high-side/low-side BSZ060NE2LSATMA1 FETs in a synchronous buck-style H-bridge topology, or as the low-side switch only with a P-channel or N-channel high-side companion.
推荐
LED Driver High-Side Switch
The BSZ060NE2LSATMA1 can serve as a high-side P-channel replacement (used as a low-side switch to ground return) or as a high-side N-channel with charge-pump drive in 12-24 V LED driver architectures. The 6 mOhm on-resistance minimizes dissipation when driving high-current LED strings (e.g., architectural lighting, automotive headlights). The PQFN 3.3 x 3.3 mm package allows dense multi-channel LED driver PCBs. For PWM dimming at >1 kHz, ensure switching losses (driven by gate charge) fit within the thermal budget.
推荐
推荐产品汇总
工程参考数据： BSZ060NE2LSATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSZ0501NS | BSZ0902NS | BSZ0901NS | BSC0501NS | BSZ040NE2LS |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| RDS(on) max @ VGS=10V | 6 mOhm | ~5 mOhm | ~9 mOhm | ~9 mOhm | ~5 mOhm | ~4 mOhm |
| Technology Family | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 5 | OptiMOS 2 |
| Pin-to-Pin Compatible | Yes (reference) | Yes | Yes | Yes | Yes | Yes |
| Approx Unit Price (qty 1000) | USD 0.32 | Higher (~USD 0.45) | Lower (~USD 0.20) | Lower (~USD 0.20) | Higher (~USD 0.50) | Higher (~USD 0.55) |
关键差异点
- OptiMOS 2 technology Figure of Merit （对比 BSZ0901NS (higher RDS(on) variant))
- Infineon OptiMOS family pin-to-pin scaling （对比 BSC0501NS (OptiMOS 5 generation))
- Wide portfolio of RDS(on) options （对比 BSZ040NE2LS (4 mOhm lower-loss variant))
设计说明
The PG-TSDSON-8-FL package relies on the exposed bottom pad for both drain electrical connection and primary thermal dissipation. Per Infineon's application note, a minimum of 4 thermal vias (0.3 mm drill, 1 oz copper plating) under the pad is recommended to achieve the datasheet's 60 C/W RθJA on a 1S1P JEDEC test board. In production designs with 4-layer 2 oz inner copper, RθJA can drop to ~25-30 C/W, enabling >40 W transient dissipation. Estimated: at 2.5 W steady dissipation, junction temperature rises ~62 C above 25 C ambient on the 1S1P reference board, rising to ~150 C at 4 W continuous.
Place the gate-drive return (Kelvin source connection) as close to pin 4 as possible. Although the TSDSON-8 has multiple source pins that all internally connect, inductance between the gate-drive return path and the power source path causes gate-drive ringing and possible shoot-through. Recommended layout: use the S pins directly adjacent to G as the gate-driver ground return, separate from the high-current power source plane that flows through the bottom drain pad. Keep the gate-loop area under 5 mm^2 to limit L*di/dt overshoot during switching transitions.
Drive the gate with a 10 V enhancement voltage for full RDS(on) specification. Although the family supports logic-level (4.5 V) drive, RDS(on) at 4.5 V VGS is typically 1.5-2x higher than at 10 V VGS - a significant loss penalty in high-current applications. Use a dedicated gate-driver IC (e.g., UCC27531, ISL89163) rather than a microcontroller GPIO for switching frequencies above 100 kHz. Estimated: at 12 A load, switching from 10 V to 4.5 V gate drive increases conduction loss from ~0.86 W to ~1.7 W.
Do not exceed the absolute maximum ratings of VGS = +/-20 V (per Infineon datasheet) - ESD events during handling can punch through the gate oxide. Use proper ESD precautions and consider a gate-source Zener clamp (5.1 V or 12 V) if the application has inductive gate paths. Also avoid operating in linear mode for extended periods: the SOA boundary drops sharply above 10 V VDS at DC, so hot-swap and inrush events must be <100 ms to stay within safe limits.
At switching frequencies above 500 kHz, parasitic source inductance (L_S) in the TSDSON-8 package (~1 nH internal) becomes significant. The voltage across L_S during turn-on subtracts from VGS, slowing the switching transition and increasing switching loss. Mitigation: (a) minimize PCB source inductance by placing the gate-driver return via directly under the gate pin, (b) use a small external gate-source capacitor (1-10 nF) to add local drive, or (c) select a higher-RDS(on) variant with lower Qg/Qgd ratio for easier drive.
合规信息
RoHS and REACH compliant per Infineon product page. MSL Level 1 per JEDEC J-STD-020. Not AEC-Q100 qualified - for automotive applications, see Infineon's automotive-grade OptiMOS portfolio.
