BSC014N04LS vs BSC014N04LSIATMA1 对比
详细并排对比 BSC014N04LS 出自 Infineon 和 BSC014N04LSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC014N04LS | BSC014N04LSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.35 | $0.39 |
| Polarity | N-channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench, thin-wafer) |
| VDS Max | 40 V | — |
| RDS(on) Max | 1.4 mOhm | — |
| ID Max | 198 A | — |
| 封装 | SuperSO8 5x6 (TDSON-8FL) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C | — |
| Configuration | Single MOSFET | — |
| Absolute Max Rating Condition | TC = 25C, de-rating required above | — |
| Thermal Test Condition | 40 mm x 40 mm x 1.5 mm FR4, 6 cm2 70 um copper drain area | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| VGS Max | [DATA_NEEDED: gate-source voltage max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation | [DATA_NEEDED: power dissipation] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: thermal resistance] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| 工作温度范围 | — | -55 C to +150 C |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |