BSC014N04LSTATMA1 vs BSC016N06NSTATMA1 对比

详细并排对比 BSC014N04LSTATMA1 出自 Infineon 和 BSC016N06NSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ 量产中
Infineon
BSC016N06NSTATMA1 BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 ✓ 量产中

规格对比

参数 BSC014N04LSTATMA1 BSC016N06NSTATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 BSC016N06NSTATMA1
Technology OptiMOS 5 (N-Channel Trench) OptiMOS 5
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
工作温度范围 -55°C to +150°C -55 C to +150 C
封装 PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
RoHS 状态 Compliant Compliant
MSL 等级 MSL1 [DATA_NEEDED: MSL level]
Lead-Free Yes Yes
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Series — OptiMOS

数据手册与资源

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