BSC014N06NSATMA1 vs IAUC120N06S5L032ATMA1 对比
详细并排对比 BSC014N06NSATMA1 出自 Infineon 和 IAUC120N06S5L032ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC014N06NSATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 (60 V) |
| 晶体管类型 | N-Channel MOSFET | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 156 W | — |
| 工作温度范围 | -55C to +150C | -55 C to +175 C (T_j) |
| 封装 | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Technology | OptiMOS 5 (shielded-gate trench) | OptiMOS 5 Trench |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |