IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
料号： IAUC120N06S5L032ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.14 | $570.00 |
| 1,000 | $0.96 | $960.00 |
| 3,000 | $0.82 | $2,460.00 |
IAUC120N06S5L032ATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. The N-channel enhancement-mode MOSFET, the dominant type in low-voltage power systems, places the load between the supply rail and the low-side drain path so that a positive gate-to-source voltage turns the device on. Power MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. OptiMOS 5 is Infineon's fifth-generation 60 V trench process, designed to lower both conduction loss (low R_DS(on)) and switching loss (low Q_G and gate charge) versus prior generations.
Key parametric advantages of the IAUC120N06S5L032ATMA1 include 3.2 mOhm R_DS(on) at 10 V V_GS, 94 W P_D at T_C = 25 C, and an industry-standard SSO8 (5x6 mm) footprint that drops into existing 60 V high-current designs. The part is fully automotive-qualified to AEC-Q101, supporting ADAS power management, 12 V battery-connected load switching, and motor-drive half-bridges in chassis and powertrain ECUs.
From an architecture standpoint, the OptiMOS 5 cell shrinks gate charge and output capacitance while keeping a robust body diode for hard-switched topologies. This enables lower switching-node ringing and reduced driver-stage stress, particularly when paired with 12 V gate drivers in half-bridge or buck-converter synchronous-rectifier positions.
Typical applications include 12 V automotive power distribution, ADAS sensor and ECU power rails, BLDC motor-drive low-side switches, and high-current synchronous rectification in telecom and server DC-DC converters.
When designing with this part, keep source-lead inductance short and place the gate-drive loop area tight to control ringing; verify T_j(max) at worst-case I_D and R_thJA in the PG-TDSON-8-34 footprint, since this 5x6 mm package requires an appropriately sized copper pour for thermal relief.
This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not summarized in the manufacturer datasheet, giving engineers a faster path to sourcing and substitution decisions.
直接替换替代料： IAUC120N06S5L032ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUC120N06S5L032ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
快速对比工具——选择替代料号进行并排对比：
BSC0504NSIATMA1
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →BSC014N06NSATMA1
✅ 直接替换✓ 有现货
$0.89 / 个
查看数据手册 →BSC059N04LS6ATMA1
✅ 直接替换✓ 有现货
$0.74 / 个
查看数据手册 →BSZ060NE2LSATMA1
✅ 直接替换✓ 有现货
$0.27 / 个
查看数据手册 →IPD090N03LGATMA1
✅ 直接替换✓ 有现货
$0.34 / 个
查看数据手册 →IAUC120N06S5L032ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) |
| 晶体管类型 | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D, T_j) | 120 A |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | 94 W |
| 封装 | PG-TDSON-8-34 (5x6 mm) |
| 安装类型 | Surface Mount |
| 工作温度范围 | -55 C to +175 C (T_j) |
| Technology | OptiMOS 5 Trench |
| AEC-Q101 Qualified | Yes |
| RoHS 状态 | Compliant |
IAUC120N06S5L032ATMA1 引脚配置
| 引脚 1 | Source — Source terminal (low-side connection) |
| 引脚 2 | Source — Source terminal (low-side connection) |
| 引脚 3 | Source — Source terminal (low-side connection) |
| 引脚 4 | Gate — Gate drive input |
| 引脚 5 | Drain — Drain terminal (high-current path) |
| 引脚 6 | Drain — Drain terminal (high-current path) |
| 引脚 7 | Drain — Drain terminal (high-current path) |
| 引脚 8 | Drain — Drain terminal (high-current path) |
安全工作区 (DC, T_C = 25 C)
典型应用
IAUC120N06S5L032ATMA1 适用于 6 应用s: 12V Automotive Power Distribution, ADAS Sensor Power Management, BLDC Motor Drive Half-Bridge, High-Current Synchronous Rectification, Battery Management System (BMS) Protection, Industrial 24V Bus Switching.
12V Automotive Power Distribution
The IAUC120N06S5L032ATMA1's 60 V V_DS rating provides generous headroom for 12 V automotive transients including 24 V jump-start and load-dump, while the 3.2 mOhm R_DS(on) and 120 A continuous I_D sustain high-current distribution rails with minimal conduction loss. Placed as a high-side switch between the battery and ECU/sensor loads, the AEC-Q101 qualification ensures compliance with automotive reliability requirements. The PG-TDSON-8-34 package's 5x6 mm footprint supports compact body-electronic modules, and the OptiMOS 5 process reduces switching loss relative to older generations, easing thermal design at high PWM frequencies.
推荐
ADAS Sensor Power Management
For ADAS cameras, radar, and lidar sensor power rails, the IAUC120N06S5L032ATMA1 delivers the 60 V transient immunity and AEC-Q101 reliability required for safety-critical functions. Its 3.2 mOhm R_DS(on) keeps I^2R losses low at the 10-30 A loads typical of sensor ECUs, while the 120 A rating provides substantial margin for inrush and fault events. Used as a high-side switch or low-side sync-FET in multi-rail sequencing, the OptiMOS 5 process enables high switching frequency operation without compromising thermal performance, critical for the dense, thermally-constrained packaging of modern ADAS modules.
推荐
BLDC Motor Drive Half-Bridge
In automotive and industrial BLDC motor-drive half-bridges, the IAUC120N06S5L032ATMA1 serves as the low-side or high-side switch in a 3-phase inverter. The 120 A continuous I_D and 94 W P_D rating cover most sub-1 kW motor applications, while the 3.2 mOhm R_DS(on) reduces conduction loss during the high-duty-cycle phases typical of torque-control loops. The robust body diode of the OptiMOS 5 cell handles dead-time conduction in the synchronous-rectifier position, and the PG-TDSON-8-34 footprint supports compact inverter PCBs with appropriate copper-pour thermal management.
推荐
High-Current Synchronous Rectification
The IAUC120N06S5L032ATMA1's low 3.2 mOhm R_DS(on) and 120 A rating make it well-suited as the synchronous-rectifier FET in 12 V-to-1 V buck converters and 48 V-to-12 V isolated bus converters. The OptiMOS 5 process provides low Q_G and Q_GD that reduce driver-stage stress and switching-node ringing in 100-500 kHz designs. Compared to older generations, the lower output capacitance (C_oss) reduces dead-time losses in the synchronous position, delivering measurable efficiency gains in server, telecom, and high-end computing DC-DC stages.
推荐
Battery Management System (BMS) Protection
In 12 V / 48 V automotive battery management systems, the IAUC120N06S5L032ATMA1 functions as a high-current disconnect or pre-charge FET, leveraging its 60 V V_DS for transient tolerance and 120 A I_D for surge handling. The 3.2 mOhm R_DS(on) keeps full-load dissipation under 50 W at worst-case continuous current, which is manageable on the PG-TDSON-8-34 footprint with proper copper-pour design. The AEC-Q101 qualification satisfies automotive BMS reliability standards, and the OptiMOS 5 process provides robust avalanche and thermal-cycling performance for long-term battery-pack reliability.
推荐
Industrial 24V Bus Switching
The IAUC120N06S5L032ATMA1 supports industrial 24 V bus switching applications including PLC outputs, solenoid drivers, and factory-automation power distribution. The 60 V V_DS rating covers 24 V nominal plus transient overshoot, and the 120 A I_D handles inrush from large capacitive loads and inductive kickback. The AEC-Q101 stress-test pedigree translates to long-term reliability in industrial environments, while the PG-TDSON-8-34 (5x6 mm) footprint supports compact DIN-rail and panel-mount designs where thermal performance and PCB area are both constrained.
推荐
推荐产品汇总
工程参考数据： IAUC120N06S5L032ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSC0504NSIATMA1 | BSC014N06NSATMA1 | BSC059N04LS6ATMA1 | BSZ060NE2LSATMA1 | IPD090N03LGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TSDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS (V) | 60 V | 60 V | 60 V | 40 V | 60 V | 30 V |
| R_DS(on) Max (mOhm @ V_GS=10V) | 3.2 mOhm | ~5 mOhm | ~1.4 mOhm | ~5.9 mOhm | ~6 mOhm | ~9 mOhm |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 2 | OptiMOS |
| Best For | 12V automotive high-current switching | General 60V automotive switching | High-frequency sync rectification | 12V-only automotive (lower V_DS margin) | Cost-optimized 60V legacy designs | Low-voltage 12V point-of-load |
关键差异点
- Lowest R_DS(on) in the IAUC 60V PG-TDSON-8 family （对比 BSC0504NSIATMA1)
- OptiMOS 5 generation with lower Q_G vs older OptiMOS （对比 BSZ060NE2LSATMA1)
- 60V V_DS rating for 12V/24V bus headroom （对比 IPD090N03LGATMA1)
设计说明
Estimated: at I_D = 100 A continuous and R_DS(on) = 3.2 mOhm, conduction loss = I^2 * R = 32 W. The PG-TDSON-8-34 package R_thJA is approximately 50 C/W on a standard 1 oz 1-square-inch copper pour, so T_j rise above 25 C ambient is roughly 50 C/W * 32 W = 1600 C - clearly violating the 175 C T_j(max) limit. Designers MUST size the PCB copper pour to keep R_thJA below ~4 C/W (i.e., 4+ square inches of 2 oz copper) or parallel two FETs. Use the Infineon thermal model from the application note for board-specific R_thJA.
Place the gate-drive return path directly over the source pad to minimize source-lead inductance and prevent gate-drive ringing. Keep the gate-driver placement within 5 mm of the gate pin, and use a 10 ohm gate resistor to control dV/dt-induced turn-on in half-bridge configurations. The PG-TDSON-8-34 exposed pad MUST be soldered to a continuous top-layer copper pour (no thermal relief spoke patterns) to achieve the rated R_DS(on) at high current; thermal relief significantly degrades both thermal and electrical performance.
Do not exceed V_GS = +/-20 V absolute maximum - the OptiMOS 5 gate oxide is sensitive to overvoltage. Use a gate-source Zener clamp (e.g., 16 V) if inductive transients could exceed 20 V. Avoid switching this FET without a minimum 10 V gate drive, as V_GS(th) is typically 2-3 V and partial enhancement dramatically increases R_DS(on). For half-bridge applications, the bootstrap supply should provide at least 10 V above the source switching node.
For EMI-sensitive automotive designs, add an RC snubber (e.g., 10 ohm + 1 nF) across the drain-source to damp switching-node ringing. The OptiMOS 5 process has very low Q_GD but very high dV/dt (~5-10 kV/us), which can couple into adjacent traces. Maintain at least 3 mm clearance between the switching node and sensitive analog traces, and use a ground-plane stitch via fence around the high-current loop to contain common-mode EMI.
合规信息
RoHS and REACH compliant per Infineon product page. AEC-Q101 qualified for automotive discrete semiconductor applications (not AEC-Q100, which is for ICs).
