BSC014NE2LSIATMA1 vs BSF134N10NJ3GXUMA1 对比

详细并排对比 BSC014NE2LSIATMA1 出自 Infineon 和 BSF134N10NJ3GXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 ✓ 量产中
Infineon
BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon

BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon

BSF134N10NJ3GXUMA1 ✓ 量产中

规格对比

参数 BSC014NE2LSIATMA1 BSF134N10NJ3GXUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.78
Technology N-Channel MOSFET (OptiMOS 25V) Trench-gate OptiMOS planar
Drain-Source Voltage (VDS) 25 V 100 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Ta) 33 A —
Continuous Drain Current (ID, Tc) [DATA_NEEDED: Tc condition rating] —
Pulsed Drain Current (IDM, Tc) 100 A —
On-State Resistance RDS(on) 1.4 mOhm (typ) at VGS = 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 74 W —
工作结温 -55 °C to +150 °C —
封装 PG-TDSON-8-7 (SuperSO8) MG-WDSON-2 (CanPAK M)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 100 V
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Configuration — Single with built-in diode
Terminal Position — Bottom
Terminal Finish — Silver Nickel
工作温度范围 — -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

数据手册与资源

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