BSC014NE2LSIATMA1 vs BSF134N10NJ3GXUMA1 Comparison
Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSF134N10NJ3GXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveSpecification Comparison
| Parameter | BSC014NE2LSIATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.78 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Ta) | 33 A | β |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | β |
| Pulsed Drain Current (IDM, Tc) | 100 A | β |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 74 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TDSON-8-7 (SuperSO8) | MG-WDSON-2 (CanPAK M) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 100 V |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 9 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.2 W |
| Power Dissipation (PD) at TC=25Β°C | β | 43 W |
| Configuration | β | Single with built-in diode |
| Terminal Position | β | Bottom |
| Terminal Finish | β | Silver Nickel |
| Operating Temperature Range | β | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | β | [DATA_NEEDED: trr value] |