BSC015NE2LS5IATMA1 vs ISC0802NLSATMA1 对比
详细并排对比 BSC015NE2LS5IATMA1 出自 Infineon 和 ISC0802NLSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC015NE2LS5IATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.69 | $1.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | 22 A |
| Continuous Drain Current (ID) at Tc | 100 A | 150 A |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| 封装 | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 (Power MOSFET) |
| 工作温度范围 | -55C to +150C (junction) | -55 C to +175 C |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Series | — | OptiMOS 5 |
| Part Number | — | ISC0802NLSATMA1 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| RDS(on) max at VGS=10V | — | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | — | 2.5 W |
| Power Dissipation (Pd) at Tc | — | 125 W |