BSC015NE2LS5IATMA1 vs ISC0802NLSATMA1 Comparison
Detailed side-by-side comparison of BSC015NE2LS5IATMA1 by Infineon and ISC0802NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSC015NE2LS5IATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.69 | $1.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at Ta | 33 A | 22 A |
| Continuous Drain Current (ID) at Tc | 100 A | 150 A |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 50 W | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Technology | OptiMOS 5 trench | OptiMOS 5 (Power MOSFET) |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Series | β | OptiMOS 5 |
| Part Number | β | ISC0802NLSATMA1 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| RDS(on) max at VGS=10V | β | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | β | 2.5 W |
| Power Dissipation (Pd) at Tc | β | 125 W |